FR2778022B1 - Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication - Google Patents

Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication

Info

Publication number
FR2778022B1
FR2778022B1 FR9805019A FR9805019A FR2778022B1 FR 2778022 B1 FR2778022 B1 FR 2778022B1 FR 9805019 A FR9805019 A FR 9805019A FR 9805019 A FR9805019 A FR 9805019A FR 2778022 B1 FR2778022 B1 FR 2778022B1
Authority
FR
France
Prior art keywords
bibolar
heterojunction
transistor
manufacturing
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9805019A
Other languages
English (en)
Other versions
FR2778022A1 (fr
Inventor
Alain Chantre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9805019A priority Critical patent/FR2778022B1/fr
Priority to US09/674,021 priority patent/US6384469B1/en
Priority to PCT/FR1999/000867 priority patent/WO1999054939A1/fr
Priority to EP99913403A priority patent/EP1074051A1/fr
Priority to JP2000545198A priority patent/JP4643005B2/ja
Publication of FR2778022A1 publication Critical patent/FR2778022A1/fr
Application granted granted Critical
Publication of FR2778022B1 publication Critical patent/FR2778022B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR9805019A 1998-04-22 1998-04-22 Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication Expired - Fee Related FR2778022B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9805019A FR2778022B1 (fr) 1998-04-22 1998-04-22 Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication
US09/674,021 US6384469B1 (en) 1998-04-22 1999-04-14 Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process
PCT/FR1999/000867 WO1999054939A1 (fr) 1998-04-22 1999-04-14 TRANSISTOR BIPOLAIRE VERTICAL, EN PARTICULIER A BASE A HETEROJONCTION SiGe, ET PROCEDE DE FABRICATION
EP99913403A EP1074051A1 (fr) 1998-04-22 1999-04-14 TRANSISTOR BIPOLAIRE VERTICAL, EN PARTICULIER A BASE A HETEROJONCTION SiGe, ET PROCEDE DE FABRICATION
JP2000545198A JP4643005B2 (ja) 1998-04-22 1999-04-14 バイポーラトランジスタ、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9805019A FR2778022B1 (fr) 1998-04-22 1998-04-22 Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2778022A1 FR2778022A1 (fr) 1999-10-29
FR2778022B1 true FR2778022B1 (fr) 2001-07-13

Family

ID=9525522

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9805019A Expired - Fee Related FR2778022B1 (fr) 1998-04-22 1998-04-22 Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication

Country Status (5)

Country Link
US (1) US6384469B1 (fr)
EP (1) EP1074051A1 (fr)
JP (1) JP4643005B2 (fr)
FR (1) FR2778022B1 (fr)
WO (1) WO1999054939A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2779573B1 (fr) * 1998-06-05 2001-10-26 St Microelectronics Sa Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
US6784467B1 (en) * 2002-08-13 2004-08-31 Newport Fab, Llc Method for fabricating a self-aligned bipolar transistor and related structure
US6444535B1 (en) * 2001-05-09 2002-09-03 Newport Fab, Llc Method to reduce emitter to base capacitance and related structure
US20020197807A1 (en) * 2001-06-20 2002-12-26 International Business Machines Corporation Non-self-aligned SiGe heterojunction bipolar transistor
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
US6617619B1 (en) * 2002-02-04 2003-09-09 Newport Fab, Llc Structure for a selective epitaxial HBT emitter
US6597022B1 (en) * 2002-02-04 2003-07-22 Newport Fab, Llc Method for controlling critical dimension in an HBT emitter and related structure
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
US6686250B1 (en) * 2002-11-20 2004-02-03 Maxim Integrated Products, Inc. Method of forming self-aligned bipolar transistor
US6919253B2 (en) * 2003-02-07 2005-07-19 Matsushita Electric Industrial Co., Ltd. Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer
US6797580B1 (en) * 2003-02-21 2004-09-28 Newport Fab, Llc Method for fabricating a bipolar transistor in a BiCMOS process and related structure
US6881640B2 (en) * 2003-09-05 2005-04-19 United Microelectronics Corp. Fabrication method for heterojunction bipolar transistor
US6972237B2 (en) * 2003-12-01 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
JP4874119B2 (ja) * 2003-12-12 2012-02-15 エヌエックスピー ビー ヴィ Ｂｉｃｍｏｓプロセスにおいてシード層トポグラフィを軽減する方法
CN100394562C (zh) * 2003-12-12 2008-06-11 联华电子股份有限公司 异质接面双极晶体管制造方法
DE602005007904D1 (de) * 2004-07-15 2008-08-14 Nxp Bv Bipolartransistor und herstellungsverfahren dafür
DE102004053394B4 (de) * 2004-11-05 2010-08-19 Atmel Automotive Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
US7511317B2 (en) * 2006-06-09 2009-03-31 International Business Machines Corporation Porous silicon for isolation region formation and related structure
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US9887278B2 (en) 2015-09-28 2018-02-06 International Business Machines Corporation Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
WO2023044773A1 (fr) * 2021-09-24 2023-03-30 华为技术有限公司 Structure semi-conductrice et son procédé de fabrication, circuit radiofréquence et terminal

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US5059544A (en) * 1988-07-14 1991-10-22 International Business Machines Corp. Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy
JP2538077B2 (ja) * 1988-11-04 1996-09-25 松下電器産業株式会社 半導体装置の製造方法
KR930004720B1 (ko) * 1988-11-04 1993-06-03 마쯔시따 덴끼 산교 가부시끼가이샤 반도체장치 및 그 제조방법
US5073810A (en) * 1989-11-07 1991-12-17 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method thereof
DE59010471D1 (de) * 1990-06-07 1996-10-02 Siemens Ag Verfahren zur Herstellung von Bipolartransistoren mit extrem reduzierter Basis-Kollektor-Kapazität
JPH0488637A (ja) * 1990-07-31 1992-03-23 Nec Corp 縦型バイポーラトランジスタを有する半導体集積回路装置
US5117271A (en) * 1990-12-07 1992-05-26 International Business Machines Corporation Low capacitance bipolar junction transistor and fabrication process therfor
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
EP0779652A2 (fr) * 1995-12-12 1997-06-18 Lucent Technologies Inc. Méthode de fabrication d'un transistor bipolaire à hétérojonction
JPH106515A (ja) * 1996-06-26 1998-01-13 Canon Inc 記録ヘッド用基体、該記録ヘッド用基体を用いた記録ヘッ ド及び該記録ヘッドを用いた記録装置
JPH1065015A (ja) * 1996-08-19 1998-03-06 Sony Corp 半導体装置およびその製造方法
JPH10135238A (ja) * 1996-11-05 1998-05-22 Sony Corp 半導体装置およびその製造方法
EP1048065A2 (fr) * 1998-08-31 2000-11-02 Koninklijke Philips Electronics N.V. Procede de production d'un dispositif a semi-conducteur dote d'un transistor bipolaire

Also Published As

Publication number Publication date
JP4643005B2 (ja) 2011-03-02
FR2778022A1 (fr) 1999-10-29
US6384469B1 (en) 2002-05-07
EP1074051A1 (fr) 2001-02-07
JP2002512452A (ja) 2002-04-23
WO1999054939A1 (fr) 1999-10-28

Similar Documents

Publication Publication Date Title
FR2778022B1 (fr) Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication
FR2779572B1 (fr) Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant
FR2799305B1 (fr) Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
FR2816109B1 (fr) Circuit integre a transistor a grille isolee et procede de fabrication
MA24360A1 (fr) Nouvelle composition a base de parasiticides, son procede de fabrication et ses applications
FR2806831B1 (fr) Procede de fabrication d'un transistor bipolaire de type double-polysilicium auto-aligne a base a heterojonction et transistor correspondant
FR2806832B1 (fr) Transistor mos a source et drain metalliques, et procede de fabrication d'un tel transistor
FR2823009B1 (fr) Procede de fabrication d'un transistor vertical a grille isolee a faible recouvrement de la grille sur la source et sur le drain, et circuit integre comportant un tel transistor
FR2798219B1 (fr) Inductance et procede de fabrication
FR2757312B1 (fr) Transistor mis a grille metallique auto-alignee et son procede de fabrication
FR2779573B1 (fr) Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
FR2799048B1 (fr) Procede de fabrication d'un transistor bipolaire vertical auto-aligne
HK1083041A1 (en) Method for fabricating a self-aligned bipolar transistor and related structure
FR2776832B1 (fr) Procede de fabrication de transistors jfet
FR2824666B1 (fr) Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant
FR2805923B1 (fr) Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne
FR2786939B1 (fr) Laser a semi-conducteur et son procede de fabrication
IT1296441B1 (it) Processo per la fabbricazione di un dispositivo a gate mos a canali p con impianto di base attraverso la finestra di contatto
FR2801650B1 (fr) Ensemble a boulon et agrafe de retenue, et son procede de fabrication
FR2770030B1 (fr) Dispositif a semiconducteur comprenant un transistor mos et procede de fabrication
FR2776124B1 (fr) Dispositif semiconducteur a diode et procede de fabrication
FR2789464B1 (fr) Support antivibratoire et son procede de fabrication
FR2794285B1 (fr) Procede de fabrication de dispositifs bipolaires a jonction base-emetteur autoalignee
FR2805081B1 (fr) Procede de fabrication de transistor bipolaire a double heterojonction sur materiau iii-v
FR2822292B1 (fr) Procede de fabrication d'un transistor bipolaire de type double polysilicium a base a heterojonction et transistor correspondant

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231