FR2776124B1 - Dispositif semiconducteur a diode et procede de fabrication - Google Patents

Dispositif semiconducteur a diode et procede de fabrication

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Publication number
FR2776124B1
FR2776124B1 FR9811805A FR9811805A FR2776124B1 FR 2776124 B1 FR2776124 B1 FR 2776124B1 FR 9811805 A FR9811805 A FR 9811805A FR 9811805 A FR9811805 A FR 9811805A FR 2776124 B1 FR2776124 B1 FR 2776124B1
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FR
France
Prior art keywords
diode
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9811805A
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English (en)
Other versions
FR2776124A1 (fr
Inventor
Shigenobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2776124A1 publication Critical patent/FR2776124A1/fr
Application granted granted Critical
Publication of FR2776124B1 publication Critical patent/FR2776124B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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FR9811805A 1998-03-13 1998-09-22 Dispositif semiconducteur a diode et procede de fabrication Expired - Fee Related FR2776124B1 (fr)

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JP2974022B1 (ja) 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP3217336B2 (ja) 1999-11-18 2001-10-09 株式会社 沖マイクロデザイン 半導体装置
JP2002016065A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 半導体装置
US6887786B2 (en) * 2002-05-14 2005-05-03 Applied Materials, Inc. Method and apparatus for forming a barrier layer on a substrate
CN1601735B (zh) * 2003-09-26 2010-06-23 松下电器产业株式会社 半导体器件及其制造方法
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US7691127B2 (en) * 2005-12-13 2010-04-06 Cardiva Medical, Inc. Drug eluting vascular closure devices and methods
DE102007016257A1 (de) * 2007-04-04 2008-10-09 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung eines elektrischen Trägerscheibenkontaktes mit vorderseitigem Anschluss
JP2008199045A (ja) * 2008-03-19 2008-08-28 Seiko Epson Corp 半導体装置およびその製造方法

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JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
US5719448A (en) * 1989-03-07 1998-02-17 Seiko Epson Corporation Bonding pad structures for semiconductor integrated circuits
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
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JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
JP3211351B2 (ja) * 1992-04-08 2001-09-25 関西日本電気株式会社 半導体装置
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