DE69507284T2 - Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind - Google Patents
Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sindInfo
- Publication number
- DE69507284T2 DE69507284T2 DE69507284T DE69507284T DE69507284T2 DE 69507284 T2 DE69507284 T2 DE 69507284T2 DE 69507284 T DE69507284 T DE 69507284T DE 69507284 T DE69507284 T DE 69507284T DE 69507284 T2 DE69507284 T2 DE 69507284T2
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- semiconductors
- fastened
- carrier
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94203386 | 1994-11-22 | ||
PCT/IB1995/000879 WO1996016443A1 (en) | 1994-11-22 | 1995-10-16 | Semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a glue layer and on which a pattern of conductor tracks is fastened |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69507284D1 DE69507284D1 (de) | 1999-02-25 |
DE69507284T2 true DE69507284T2 (de) | 1999-07-01 |
Family
ID=8217398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69507284T Expired - Lifetime DE69507284T2 (de) | 1994-11-22 | 1995-10-16 | Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind |
Country Status (6)
Country | Link |
---|---|
US (1) | US5739591A (de) |
EP (1) | EP0740853B1 (de) |
JP (1) | JP4319251B2 (de) |
KR (1) | KR100389754B1 (de) |
DE (1) | DE69507284T2 (de) |
WO (1) | WO1996016443A1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997034321A2 (en) * | 1996-03-12 | 1997-09-18 | Philips Electronics N.V. | Semiconductor body with a substrate glued to a support body |
JPH11261010A (ja) | 1998-03-13 | 1999-09-24 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2002543591A (ja) | 1999-04-23 | 2002-12-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 本体がソフトフェライト材料を有する動作周波数が50MHzより高い半導体装置 |
US6452272B1 (en) * | 1999-06-29 | 2002-09-17 | Koninklijke Philips Electronics N.V. | Semiconductor device |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
CN101714516A (zh) | 2001-08-24 | 2010-05-26 | 肖特股份公司 | 用于形成触点的方法及封装的集成电路组件 |
EP1430514A2 (de) * | 2001-09-18 | 2004-06-23 | Koninklijke Philips Electronics N.V. | Verfahren zur untersuchung eines halbleitermaterials mit hilfe von röntgenstrahlen |
DE10356885B4 (de) | 2003-12-03 | 2005-11-03 | Schott Ag | Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement |
ES2382814T3 (es) | 2005-05-17 | 2012-06-13 | Merck Sharp & Dohme Ltd. | Ácido cis-4-[(4-clorofenil)sulfonil]-4-(2,5-difluorofenil)ciclohexanopropanoico para el tratamiento del cáncer |
GB0603041D0 (en) | 2006-02-15 | 2006-03-29 | Angeletti P Ist Richerche Bio | Therapeutic compounds |
EA018917B1 (ru) | 2006-04-19 | 2013-11-29 | Новартис Аг | 6-о-замещенные бензоксазолы и бензотиазолы и способы подавления передачи сигналов от csf-1r |
CA2770486C (en) | 2006-09-22 | 2014-07-15 | Merck Sharp & Dohme Corp. | Use of platencin and platensimycin as fatty acid synthesis inhibitors to treat obesity, diabetes and cancer |
PL2109608T3 (pl) | 2007-01-10 | 2011-08-31 | Msd Italia Srl | Indazole podstawione grupą amidową jako inhibitory polimerazy poli(ADP-rybozy)-(PARP) |
US8822497B2 (en) | 2007-03-01 | 2014-09-02 | Novartis Ag | PIM kinase inhibitors and methods of their use |
WO2008144062A1 (en) | 2007-05-21 | 2008-11-27 | Novartis Ag | Csf-1r inhibitors, compositions, and methods of use |
JP5501227B2 (ja) | 2007-06-27 | 2014-05-21 | メルク・シャープ・アンド・ドーム・コーポレーション | ヒストンデアセチラーゼ阻害剤としての4−カルボキシベンジルアミノ誘導体 |
WO2010114780A1 (en) | 2009-04-01 | 2010-10-07 | Merck Sharp & Dohme Corp. | Inhibitors of akt activity |
WO2010144909A1 (en) | 2009-06-12 | 2010-12-16 | Novartis Ag | Fused heterocyclic compounds and their uses |
WO2011010260A1 (en) * | 2009-07-22 | 2011-01-27 | Koninklijke Philips Electronics N.V. | Thermal flow sensor integrated circuit with low response time and high sensitivity |
US8859776B2 (en) | 2009-10-14 | 2014-10-14 | Merck Sharp & Dohme Corp. | Substituted piperidines that increase p53 activity and the uses thereof |
AU2011227643A1 (en) | 2010-03-16 | 2012-09-20 | Dana-Farber Cancer Institute, Inc. | Indazole compounds and their uses |
EP2584903B1 (de) | 2010-06-24 | 2018-10-24 | Merck Sharp & Dohme Corp. | Neue heterozyklische verbindungen als erk-hemmer |
JP6043285B2 (ja) | 2010-08-02 | 2016-12-14 | サーナ・セラピューティクス・インコーポレイテッドSirna Therapeutics,Inc. | 低分子干渉核酸(siNA)を用いたカテニン(カドヘリン結合型タンパク質)β1(CTNNB1)遺伝子発現のRNA干渉媒介性阻害 |
RU2624045C2 (ru) | 2010-08-17 | 2017-06-30 | Сирна Терапьютикс,Инк | ОПОСРЕДУЕМОЕ РНК-ИНТЕРФЕРЕНЦИЕЙ ИНГИБИРОВАНИЕ ЭКСПРЕССИИ ГЕНОВ ВИРУСА ГЕПАТИТА B (HBV) С ПРИМЕНЕНИЕМ МАЛОЙ ИНТЕРФЕРИРУЮЩЕЙ НУКЛЕИНОВОЙ КИСЛОТЫ (миНК) |
US8883801B2 (en) | 2010-08-23 | 2014-11-11 | Merck Sharp & Dohme Corp. | Substituted pyrazolo[1,5-a]pyrimidines as mTOR inhibitors |
EP2613782B1 (de) | 2010-09-01 | 2016-11-02 | Merck Sharp & Dohme Corp. | Indazolderivate als erk-hemmer |
US9242981B2 (en) | 2010-09-16 | 2016-01-26 | Merck Sharp & Dohme Corp. | Fused pyrazole derivatives as novel ERK inhibitors |
EP2632472B1 (de) | 2010-10-29 | 2017-12-13 | Sirna Therapeutics, Inc. | Durch rna-interferenz vermittelte inhibition einer genexpression unter verwendung von short-interfering-nukleinsäuren (sina) |
WO2012087772A1 (en) | 2010-12-21 | 2012-06-28 | Schering Corporation | Indazole derivatives useful as erk inhibitors |
CN103732592A (zh) | 2011-04-21 | 2014-04-16 | 默沙东公司 | 胰岛素样生长因子-1受体抑制剂 |
US9023865B2 (en) | 2011-10-27 | 2015-05-05 | Merck Sharp & Dohme Corp. | Compounds that are ERK inhibitors |
US20150299696A1 (en) | 2012-05-02 | 2015-10-22 | Sirna Therapeutics, Inc. | SHORT INTERFERING NUCLEIC ACID (siNA) COMPOSITIONS |
CA2882950A1 (en) | 2012-09-28 | 2014-04-03 | Merck Sharp & Dohme Corp. | Novel compounds that are erk inhibitors |
USRE48175E1 (en) | 2012-10-19 | 2020-08-25 | Dana-Farber Cancer Institute, Inc. | Hydrophobically tagged small molecules as inducers of protein degradation |
RU2660349C2 (ru) | 2012-11-28 | 2018-07-05 | Мерк Шарп И Доум Корп. | Композиции и способы для лечения злокачественной опухоли |
WO2014100065A1 (en) | 2012-12-20 | 2014-06-26 | Merck Sharp & Dohme Corp. | Substituted imidazopyridines as hdm2 inhibitors |
WO2014120748A1 (en) | 2013-01-30 | 2014-08-07 | Merck Sharp & Dohme Corp. | 2,6,7,8 substituted purines as hdm2 inhibitors |
EP3041938A1 (de) | 2013-09-03 | 2016-07-13 | Moderna Therapeutics, Inc. | Kreisförmige polynukleotide |
EP3057955B1 (de) | 2013-10-18 | 2018-04-11 | Syros Pharmaceuticals, Inc. | Zur behandlung von proliferativen erkrankungen geeignete heteroaromatische verbindungen |
US10047070B2 (en) | 2013-10-18 | 2018-08-14 | Dana-Farber Cancer Institute, Inc. | Polycyclic inhibitors of cyclin-dependent kinase 7 (CDK7) |
JO3589B1 (ar) | 2014-08-06 | 2020-07-05 | Novartis Ag | مثبطات كيناز البروتين c وطرق استخداماتها |
WO2016160617A2 (en) | 2015-03-27 | 2016-10-06 | Dana-Farber Cancer Institute, Inc. | Inhibitors of cyclin-dependent kinases |
JOP20190055A1 (ar) | 2016-09-26 | 2019-03-24 | Merck Sharp & Dohme | أجسام مضادة ضد cd27 |
EP3609922A2 (de) | 2017-04-13 | 2020-02-19 | Aduro Biotech Holdings, Europe B.V. | Anti-sirp-alpha-antikörper |
EP3706742B1 (de) | 2017-11-08 | 2023-03-15 | Merck Sharp & Dohme LLC | Prmt5-inhibitoren |
WO2019148412A1 (en) | 2018-02-01 | 2019-08-08 | Merck Sharp & Dohme Corp. | Anti-pd-1/lag3 bispecific antibodies |
US20210309688A1 (en) | 2018-08-07 | 2021-10-07 | Merck Sharp & Dohme Corp. | Prmt5 inhibitors |
WO2020033282A1 (en) | 2018-08-07 | 2020-02-13 | Merck Sharp & Dohme Corp. | Prmt5 inhibitors |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
JPH01215033A (ja) * | 1988-02-24 | 1989-08-29 | Fuji Electric Co Ltd | 半導体チップ用ボンディングパッド |
JP3077034B2 (ja) * | 1990-07-25 | 2000-08-14 | セイコーインスツルメンツ株式会社 | 半導体イメージセンサ装置 |
KR930006732B1 (ko) * | 1991-05-08 | 1993-07-23 | 재단법인 한국전자통신연구소 | 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법 |
US5273921A (en) * | 1991-12-27 | 1993-12-28 | Purdue Research Foundation | Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
US5213990A (en) * | 1992-04-01 | 1993-05-25 | Texas Instruments, Incorporated | Method for forming a stacked semiconductor structure |
-
1995
- 1995-10-16 KR KR1019960703919A patent/KR100389754B1/ko not_active IP Right Cessation
- 1995-10-16 EP EP95932885A patent/EP0740853B1/de not_active Expired - Lifetime
- 1995-10-16 DE DE69507284T patent/DE69507284T2/de not_active Expired - Lifetime
- 1995-10-16 WO PCT/IB1995/000879 patent/WO1996016443A1/en active IP Right Grant
- 1995-10-16 JP JP51669796A patent/JP4319251B2/ja not_active Expired - Lifetime
-
1997
- 1997-07-08 US US08/889,716 patent/US5739591A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970700942A (ko) | 1997-02-12 |
EP0740853B1 (de) | 1999-01-13 |
WO1996016443A1 (en) | 1996-05-30 |
US5739591A (en) | 1998-04-14 |
JPH09508502A (ja) | 1997-08-26 |
KR100389754B1 (ko) | 2003-10-17 |
DE69507284D1 (de) | 1999-02-25 |
JP4319251B2 (ja) | 2009-08-26 |
EP0740853A1 (de) | 1996-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69507284D1 (de) | Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind | |
DE69508816D1 (de) | Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren | |
DE69123269T2 (de) | Überzugsschicht für mikroelektronische Anordnungen und Substrate | |
DE69404778T2 (de) | Thermische Behandlungsmodul für Beschichtungs/Entwicklungseinrichtung für Substrat | |
ATA50197A (de) | Beschichtetes substrat für eine transparente anordnung mit hoher selektivität | |
DE69311174T2 (de) | Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat | |
KR900008918A (ko) | 배선기판과 그 제조방법, 박막 캐리어, 반도체 장치 및 그 장착구조와 반도체 장치장착 방법 | |
DE69312099D1 (de) | Substrat für ein Flüssigkristallelement und entsprechende Herstellungsmethode | |
NO841066L (no) | Fremgangsmaate for paafoering av belegg paa et gjennomsiktig substrat | |
DE69219300T2 (de) | Ein transparentes Filmbeschichtetes Substrat | |
DE69226824T2 (de) | Halbleitervorrichtung montiert auf einem Substrat | |
DE69430765T2 (de) | Eingebettetes Substrat für integrierte Schaltungsmodule | |
DE69029341D1 (de) | Halbleiterbauelement mit einer auf einem Substrat aufgewachsenen epitaxialen Schicht | |
DE69728063D1 (de) | Verfahren zum beschichten mit mehreren flüssigen schichten auf einem substrat | |
DE69102263D1 (de) | Halbleiteranordnung mit einer auf einem strukturierten Substrat aufgewachsenen Schichtstruktur. | |
DE59006671D1 (de) | Verfahren und Vorrichtung zum elektrostatischen Aufsprühen einer Flüssigkeitsschicht auf ein Substrat und zum Trocknen der Flüssigkeitsschicht auf dem Substrat. | |
DE69320809T2 (de) | Verwendung eines siliconharzes zum beschichten eines substrats | |
DE69107171T2 (de) | Trocknungsverfahren und -vorrichtung für ein beschichtetes Substrat. | |
DE69622339D1 (de) | Verfahren zum herstellen einer einrichtung, bei der ein substrat mit halbleiterelement und leiterbahnen auf ein trägersubstrat mit metallisierung aufgeklebt wird | |
DE68925398D1 (de) | Ausbilden eines vorgeschriebenen Musters auf einer Schicht eines Halbleiterelements | |
DE69403748D1 (de) | Verfahren zum Verbinden einer Tintenaufnahmeschicht auf einem vorgegebenen Substrat | |
DE69316244T2 (de) | Substrat mit einer Anordnung aktiver Elemente | |
DE69840062D1 (de) | Keramisches Substrat mit einer metallischen Schaltung | |
DE69315114T2 (de) | Epitaxie auf einem Substrat | |
DE69622666D1 (de) | Herstellungsmethode einer mikroelektronischen Schaltung mit vielen Verbindungselementen auf einem Substrat |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |
|
R082 | Change of representative |
Ref document number: 740853 Country of ref document: EP Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, 80639 M |
|
R085 | Willingness to licence withdrawn |
Ref document number: 740853 Country of ref document: EP Effective date: 20111223 |