DE69507284D1 - Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind - Google Patents

Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind

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Publication number
DE69507284D1
DE69507284D1 DE69507284T DE69507284T DE69507284D1 DE 69507284 D1 DE69507284 D1 DE 69507284D1 DE 69507284 T DE69507284 T DE 69507284T DE 69507284 T DE69507284 T DE 69507284T DE 69507284 D1 DE69507284 D1 DE 69507284D1
Authority
DE
Germany
Prior art keywords
pattern
semiconductors
fastened
carrier
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69507284T
Other languages
English (en)
Other versions
DE69507284T2 (de
Inventor
Ronald Dekker
Henricus Maas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69507284D1 publication Critical patent/DE69507284D1/de
Publication of DE69507284T2 publication Critical patent/DE69507284T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4825Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/838Bonding techniques
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE69507284T 1994-11-22 1995-10-16 Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind Expired - Lifetime DE69507284T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203386 1994-11-22
PCT/IB1995/000879 WO1996016443A1 (en) 1994-11-22 1995-10-16 Semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a glue layer and on which a pattern of conductor tracks is fastened

Publications (2)

Publication Number Publication Date
DE69507284D1 true DE69507284D1 (de) 1999-02-25
DE69507284T2 DE69507284T2 (de) 1999-07-01

Family

ID=8217398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507284T Expired - Lifetime DE69507284T2 (de) 1994-11-22 1995-10-16 Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind

Country Status (6)

Country Link
US (1) US5739591A (de)
EP (1) EP0740853B1 (de)
JP (1) JP4319251B2 (de)
KR (1) KR100389754B1 (de)
DE (1) DE69507284T2 (de)
WO (1) WO1996016443A1 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4633868B2 (ja) * 1996-03-12 2011-02-16 エヌエックスピー ビー ヴィ 支持体に接着される基板を有する半導体本体
JPH11261010A (ja) * 1998-03-13 1999-09-24 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2000065655A1 (en) 1999-04-23 2000-11-02 Koninklijke Philips Electronics N.V. A semiconductor device with an operating frequency larger than 50mhz comprising a body composed of a soft ferrite material
WO2001001485A2 (en) * 1999-06-29 2001-01-04 Koninklijke Philips Electronics N.V. A semiconductor device
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
WO2003019653A2 (de) 2001-08-24 2003-03-06 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
CN1555486A (zh) 2001-09-18 2004-12-15 皇家飞利浦电子股份有限公司 利用x射线检查半导体材料的晶片的方法
DE10356885B4 (de) 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
ATE550019T1 (de) 2005-05-17 2012-04-15 Merck Sharp & Dohme Cis-4-ä(4-chlorophenyl)sulfonylü-4-(2,5- difluorophenyl)cyclohexanepropansäure zur behandlug von krebs
GB0603041D0 (en) 2006-02-15 2006-03-29 Angeletti P Ist Richerche Bio Therapeutic compounds
TW200813039A (en) 2006-04-19 2008-03-16 Novartis Ag 6-O-substituted benzoxazole and benzothiazole compounds and methods of inhibiting CSF-1R signaling
CA2664113C (en) 2006-09-22 2013-05-28 Merck & Co., Inc. Use of platencin and platensimycin as fatty acid synthesis inhibitors to treat obesity, diabetes and cancer
PL2109608T3 (pl) 2007-01-10 2011-08-31 Msd Italia Srl Indazole podstawione grupą amidową jako inhibitory polimerazy poli(ADP-rybozy)-(PARP)
WO2008106692A1 (en) 2007-03-01 2008-09-04 Novartis Vaccines And Diagnostics, Inc. Pim kinase inhibitors and methods of their use
KR20100017866A (ko) 2007-05-21 2010-02-16 노파르티스 아게 Csf-1r 억제제, 조성물 및 사용 방법
CA2690191C (en) 2007-06-27 2015-07-28 Merck Sharp & Dohme Corp. 4-carboxybenzylamino derivatives as histone deacetylase inhibitors
WO2010114780A1 (en) 2009-04-01 2010-10-07 Merck Sharp & Dohme Corp. Inhibitors of akt activity
US8765747B2 (en) 2009-06-12 2014-07-01 Dana-Farber Cancer Institute, Inc. Fused 2-aminothiazole compounds
EP2457065A1 (de) * 2009-07-22 2012-05-30 Koninklijke Philips Electronics N.V. Integrierte schaltung eines thermischen flusssensors mit geringer ansprechzeit und hoher empfindlichkeit
BR112012008849A2 (pt) 2009-10-14 2015-09-22 Schering Corp composto, composição farmacêutica, e, uso de um composto
CN103080093A (zh) 2010-03-16 2013-05-01 达纳-法伯癌症研究所公司 吲唑化合物及其应用
EP2584903B1 (de) 2010-06-24 2018-10-24 Merck Sharp & Dohme Corp. Neue heterozyklische verbindungen als erk-hemmer
CN103068980B (zh) 2010-08-02 2017-04-05 瑟纳治疗公司 使用短干扰核酸(siNA)的RNA干扰介导的联蛋白(钙粘蛋白关联蛋白质),β1(CTNNB1)基因表达的抑制
SI2606134T1 (sl) 2010-08-17 2019-08-30 Sirna Therapeutics, Inc. RNA-INTERFERENČNO POSREDOVANO ZAVIRANJE IZRAŽANJA GENA VIRUSA HEPATITISA B (HBV) Z UPORABO KRATKE INTERFERENČNE NUKLEINSKE KISLINE (siNA)
US8883801B2 (en) 2010-08-23 2014-11-11 Merck Sharp & Dohme Corp. Substituted pyrazolo[1,5-a]pyrimidines as mTOR inhibitors
WO2012030685A2 (en) 2010-09-01 2012-03-08 Schering Corporation Indazole derivatives useful as erk inhibitors
EP2615916B1 (de) 2010-09-16 2017-01-04 Merck Sharp & Dohme Corp. Kondensierte pyrazolderivate als neue erk-hemmer
DK2632472T3 (en) 2010-10-29 2018-03-19 Sirna Therapeutics Inc RNA INTERFERENCE-MEDIATED INHIBITION OF GENE EXPRESSION USING SHORT INTERFERRING NUCLEIC ACIDS (SINA)
WO2012087772A1 (en) 2010-12-21 2012-06-28 Schering Corporation Indazole derivatives useful as erk inhibitors
IN2013MN02170A (de) 2011-04-21 2015-06-12 Piramal Entpr Ltd
EP2770987B1 (de) 2011-10-27 2018-04-04 Merck Sharp & Dohme Corp. Neue verbindungen als erk-hemmer
EP3919620A1 (de) 2012-05-02 2021-12-08 Sirna Therapeutics, Inc. Zusammensetzungen mit kurzer interferierender nukleinsäure (sina)
JP6280554B2 (ja) 2012-09-28 2018-02-14 メルク・シャープ・アンド・ドーム・コーポレーションMerck Sharp & Dohme Corp. Erk阻害剤である新規化合物
USRE48175E1 (en) 2012-10-19 2020-08-25 Dana-Farber Cancer Institute, Inc. Hydrophobically tagged small molecules as inducers of protein degradation
PL2925888T3 (pl) 2012-11-28 2018-03-30 Merck Sharp & Dohme Corp. Kompozycje i sposoby do stosowania w leczeniu nowotworów
WO2014100065A1 (en) 2012-12-20 2014-06-26 Merck Sharp & Dohme Corp. Substituted imidazopyridines as hdm2 inhibitors
WO2014120748A1 (en) 2013-01-30 2014-08-07 Merck Sharp & Dohme Corp. 2,6,7,8 substituted purines as hdm2 inhibitors
US20160194368A1 (en) 2013-09-03 2016-07-07 Moderna Therapeutics, Inc. Circular polynucleotides
WO2015058140A1 (en) 2013-10-18 2015-04-23 Dana-Farber Cancer Institute, Inc. Polycyclic inhibitors of cyclin-dependent kinase 7 (cdk7)
EP3057955B1 (de) 2013-10-18 2018-04-11 Syros Pharmaceuticals, Inc. Zur behandlung von proliferativen erkrankungen geeignete heteroaromatische verbindungen
JO3589B1 (ar) 2014-08-06 2020-07-05 Novartis Ag مثبطات كيناز البروتين c وطرق استخداماتها
JP6861166B2 (ja) 2015-03-27 2021-04-21 ダナ−ファーバー キャンサー インスティテュート, インコーポレイテッド サイクリン依存性キナーゼの阻害剤
JOP20190055A1 (ar) 2016-09-26 2019-03-24 Merck Sharp & Dohme أجسام مضادة ضد cd27
US10975084B2 (en) 2016-10-12 2021-04-13 Merck Sharp & Dohme Corp. KDM5 inhibitors
CN110650976B (zh) 2017-04-13 2024-04-19 赛罗帕私人有限公司 抗SIRPα抗体
US10947234B2 (en) 2017-11-08 2021-03-16 Merck Sharp & Dohme Corp. PRMT5 inhibitors
WO2019148412A1 (en) 2018-02-01 2019-08-08 Merck Sharp & Dohme Corp. Anti-pd-1/lag3 bispecific antibodies
WO2020033284A1 (en) 2018-08-07 2020-02-13 Merck Sharp & Dohme Corp. Prmt5 inhibitors
US11993602B2 (en) 2018-08-07 2024-05-28 Merck Sharp & Dohme Llc PRMT5 inhibitors
WO2024180169A1 (en) 2023-03-02 2024-09-06 Carcimun Biotech Gmbh Means and methods for diagnosing cancer and/or an acute inflammatory disease

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308386A (ja) * 1987-01-30 1988-12-15 Sony Corp 半導体装置とその製造方法
JPH01215033A (ja) * 1988-02-24 1989-08-29 Fuji Electric Co Ltd 半導体チップ用ボンディングパッド
JP3077034B2 (ja) * 1990-07-25 2000-08-14 セイコーインスツルメンツ株式会社 半導体イメージセンサ装置
KR930006732B1 (ko) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
US5213990A (en) * 1992-04-01 1993-05-25 Texas Instruments, Incorporated Method for forming a stacked semiconductor structure

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DE69507284T2 (de) 1999-07-01
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JP4319251B2 (ja) 2009-08-26
KR100389754B1 (ko) 2003-10-17
EP0740853B1 (de) 1999-01-13
US5739591A (en) 1998-04-14
EP0740853A1 (de) 1996-11-06
WO1996016443A1 (en) 1996-05-30

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