DE69210886D1 - Substrat mit Dünnfilmelementen - Google Patents

Substrat mit Dünnfilmelementen

Info

Publication number
DE69210886D1
DE69210886D1 DE69210886T DE69210886T DE69210886D1 DE 69210886 D1 DE69210886 D1 DE 69210886D1 DE 69210886 T DE69210886 T DE 69210886T DE 69210886 T DE69210886 T DE 69210886T DE 69210886 D1 DE69210886 D1 DE 69210886D1
Authority
DE
Germany
Prior art keywords
substrate
thin film
film elements
elements
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69210886T
Other languages
English (en)
Other versions
DE69210886T2 (de
Inventor
Hideo Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69210886D1 publication Critical patent/DE69210886D1/de
Publication of DE69210886T2 publication Critical patent/DE69210886T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
DE69210886T 1991-06-27 1992-06-25 Substrat mit Dünnfilmelementen Expired - Fee Related DE69210886T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3181625A JPH055898A (ja) 1991-06-27 1991-06-27 薄膜素子形成パネル

Publications (2)

Publication Number Publication Date
DE69210886D1 true DE69210886D1 (de) 1996-06-27
DE69210886T2 DE69210886T2 (de) 1996-10-02

Family

ID=16104058

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69210886T Expired - Fee Related DE69210886T2 (de) 1991-06-27 1992-06-25 Substrat mit Dünnfilmelementen

Country Status (4)

Country Link
US (1) US5334860A (de)
EP (1) EP0520448B1 (de)
JP (1) JPH055898A (de)
DE (1) DE69210886T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
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US5621556A (en) * 1994-04-28 1997-04-15 Xerox Corporation Method of manufacturing active matrix LCD using five masks
JPH08160450A (ja) * 1994-12-12 1996-06-21 Ricoh Co Ltd 配線用積層金属材料および該材料を使用したパターン形成方法
US5559345A (en) * 1994-12-20 1996-09-24 Goldstar Co., Ltd. Thin film transistor having redundant metal patterns
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
JPH0964366A (ja) * 1995-08-23 1997-03-07 Toshiba Corp 薄膜トランジスタ
KR100225098B1 (ko) 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
US5624983A (en) * 1995-11-02 1997-04-29 Ciba-Geigy Corporation Amorphous modification of 1,1',1"-nitrilo(triethyl-tris-[2,2'-methylene-bis(4,6-di-tert-butylphenyl)] phosphite)
US5773845A (en) * 1995-11-09 1998-06-30 Lg Electronics Inc. Liquid crystal display device with decreased line width and method of forming the same
KR0175409B1 (ko) * 1995-11-20 1999-02-18 김광호 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR0175410B1 (ko) * 1995-11-21 1999-02-01 김광호 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
KR100237679B1 (ko) * 1995-12-30 2000-01-15 윤종용 저항 차를 줄이는 팬 아웃부를 가지는 액정 표시 패널
KR0181781B1 (ko) * 1995-12-30 1999-05-01 구자홍 액정표시장치의 배열기판 및 그 제조방법
KR980003739A (ko) * 1996-06-14 1998-03-30 구자홍 박막트랜지스터 어레이 기판 및 그 제조방법
KR100229613B1 (ko) * 1996-12-30 1999-11-15 구자홍 액정 표시 장치 및 제조 방법
JP3782195B2 (ja) * 1997-03-10 2006-06-07 株式会社東芝 アクティブマトリクス型液晶表示素子及びその製造方法
US6157430A (en) * 1997-03-24 2000-12-05 Mitsubishi Denki Kabushiki Kaisha Active matrix liquid crystal device including brush-clearable multiple layer electrodes and a method of manufacturing the same
JP3856901B2 (ja) * 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
TW413955B (en) 1997-10-18 2000-12-01 Samsung Electronics Co Ltd Liquid crystal displays and manufacturing methods thereof
KR100502804B1 (ko) * 1997-10-18 2005-10-26 삼성전자주식회사 액정표시장치및그제조방법
US6133977A (en) 1997-10-21 2000-10-17 Samsung Electronics Co., Ltd. Liquid crystal displays having common electrode overlap with one or more data lines
KR100338008B1 (ko) * 1997-11-20 2002-10-25 삼성전자 주식회사 질화 몰리브덴-금속 합금막과 그의 제조 방법, 액정표시장치용 배선과 그의 제조 방법 및 액정 표시 장치와 그의 제조방법
JP3916334B2 (ja) * 1999-01-13 2007-05-16 シャープ株式会社 薄膜トランジスタ
KR100590921B1 (ko) * 1999-06-30 2006-06-19 비오이 하이디스 테크놀로지 주식회사 액정 표시 장치
JP3746925B2 (ja) * 1999-08-27 2006-02-22 セイコーエプソン株式会社 液晶装置および電子機器
EP1184882A4 (de) * 2000-01-28 2007-12-12 Tdk Corp Leitermuster in mehrlagenplatte, mehrlagenplatte mit integriertem leitermuster und mehrlagenplattenherstellung
GB0102167D0 (en) * 2001-01-27 2001-03-14 Koninl Philips Electronics Nv Pixellated devices such as active matrix liquid crystal displys and methods of manufacturing such
KR100792466B1 (ko) * 2001-05-21 2008-01-08 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그의 제조방법
US20030122987A1 (en) * 2001-12-28 2003-07-03 Myung-Joon Kim Array substrate for a liquid crystal display device having multi-layered metal line and fabricating method thereof
JP2003228081A (ja) * 2002-01-31 2003-08-15 Nec Corp 液晶表示装置及びその製造方法
KR100939560B1 (ko) * 2003-06-30 2010-01-29 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
CN100449715C (zh) * 2006-01-23 2009-01-07 友达光电股份有限公司 薄膜晶体管及其制造方法
TWI305420B (en) * 2006-06-20 2009-01-11 Au Optronics Corp Thin film transistor array substrate and method for fabricating the same
CN105070749B (zh) * 2009-07-18 2019-08-09 株式会社半导体能源研究所 半导体装置以及制造半导体装置的方法
JP5719610B2 (ja) * 2011-01-21 2015-05-20 三菱電機株式会社 薄膜トランジスタ、及びアクティブマトリクス基板
CN102929061B (zh) * 2012-11-19 2016-01-20 深圳市华星光电技术有限公司 一种液晶显示装置及其制造方法
CN104505392A (zh) * 2014-12-29 2015-04-08 合肥鑫晟光电科技有限公司 阵列基板及其制作方法、阵列基板的修复方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752776B2 (ja) * 1985-01-24 1995-06-05 シャープ株式会社 薄膜トランジスタおよびその製造法
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
JPS63263743A (ja) * 1987-04-22 1988-10-31 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法
JPH02157828A (ja) * 1988-12-12 1990-06-18 Hosiden Electron Co Ltd 液晶表示素子
US5153754A (en) * 1989-06-30 1992-10-06 General Electric Company Multi-layer address lines for amorphous silicon liquid crystal display devices
JPH0828517B2 (ja) * 1989-07-04 1996-03-21 シャープ株式会社 薄膜トランジスタアレイ
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
US5132745A (en) * 1990-10-05 1992-07-21 General Electric Company Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
US5168072A (en) * 1990-10-12 1992-12-01 Texas Instruments Incorporated Method of fabricating an high-performance insulated-gate field-effect transistor

Also Published As

Publication number Publication date
DE69210886T2 (de) 1996-10-02
JPH055898A (ja) 1993-01-14
EP0520448A1 (de) 1992-12-30
US5334860A (en) 1994-08-02
EP0520448B1 (de) 1996-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee