DE69619074D1 - Substratträgervorrichtung für eine Beschichtungskammer - Google Patents
Substratträgervorrichtung für eine BeschichtungskammerInfo
- Publication number
- DE69619074D1 DE69619074D1 DE69619074T DE69619074T DE69619074D1 DE 69619074 D1 DE69619074 D1 DE 69619074D1 DE 69619074 T DE69619074 T DE 69619074T DE 69619074 T DE69619074 T DE 69619074T DE 69619074 D1 DE69619074 D1 DE 69619074D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate carrier
- carrier device
- coating chamber
- coating
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/567,601 US5803977A (en) | 1992-09-30 | 1995-12-05 | Apparatus for full wafer deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69619074D1 true DE69619074D1 (de) | 2002-03-21 |
DE69619074T2 DE69619074T2 (de) | 2002-08-29 |
Family
ID=24267854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69619074T Expired - Fee Related DE69619074T2 (de) | 1995-12-05 | 1996-12-04 | Substratträgervorrichtung für eine Beschichtungskammer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5803977A (de) |
EP (1) | EP0776990B1 (de) |
JP (1) | JP4570699B2 (de) |
KR (1) | KR100521230B1 (de) |
DE (1) | DE69619074T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110268094A (zh) * | 2017-02-07 | 2019-09-20 | 应用材料公司 | 减少电介质溅射中的缺陷的糊贴方法 |
Families Citing this family (99)
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DE3919775C2 (de) * | 1989-06-16 | 1994-09-01 | Daimler Benz Ag | Abstützlager |
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US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
US6086680A (en) * | 1995-08-22 | 2000-07-11 | Asm America, Inc. | Low-mass susceptor |
WO1997009737A1 (en) * | 1995-09-01 | 1997-03-13 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
KR100489918B1 (ko) * | 1996-05-09 | 2005-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마발생및스퍼터링용코일 |
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US6682288B2 (en) | 2000-07-27 | 2004-01-27 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
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US5261655A (en) * | 1992-12-28 | 1993-11-16 | Xerox Corporation | Disk stacker with intermittent corrugation assistance for small sheets |
EP0606751B1 (de) * | 1993-01-13 | 2002-03-06 | Applied Materials, Inc. | Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung |
EP0624896B1 (de) * | 1993-05-13 | 1999-09-22 | Applied Materials, Inc. | Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen |
EP0742579A2 (de) * | 1995-05-11 | 1996-11-13 | Applied Materials, Inc. | Ein Verfahren und Vorrichtung für die Konzentration von Plasma auf einer Substratoberfläche während der Bearbeitung |
US5690795A (en) * | 1995-06-05 | 1997-11-25 | Applied Materials, Inc. | Screwless shield assembly for vacuum processing chambers |
-
1995
- 1995-12-05 US US08/567,601 patent/US5803977A/en not_active Expired - Fee Related
-
1996
- 1996-12-03 JP JP32281296A patent/JP4570699B2/ja not_active Expired - Fee Related
- 1996-12-04 DE DE69619074T patent/DE69619074T2/de not_active Expired - Fee Related
- 1996-12-04 EP EP96308754A patent/EP0776990B1/de not_active Expired - Lifetime
- 1996-12-05 KR KR1019960061759A patent/KR100521230B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110268094A (zh) * | 2017-02-07 | 2019-09-20 | 应用材料公司 | 减少电介质溅射中的缺陷的糊贴方法 |
Also Published As
Publication number | Publication date |
---|---|
KR970052033A (ko) | 1997-07-29 |
EP0776990B1 (de) | 2002-02-06 |
KR100521230B1 (ko) | 2005-12-27 |
EP0776990A1 (de) | 1997-06-04 |
JP4570699B2 (ja) | 2010-10-27 |
US5803977A (en) | 1998-09-08 |
JPH09209147A (ja) | 1997-08-12 |
DE69619074T2 (de) | 2002-08-29 |
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