AU4823200A - Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth - Google Patents

Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth

Info

Publication number
AU4823200A
AU4823200A AU48232/00A AU4823200A AU4823200A AU 4823200 A AU4823200 A AU 4823200A AU 48232/00 A AU48232/00 A AU 48232/00A AU 4823200 A AU4823200 A AU 4823200A AU 4823200 A AU4823200 A AU 4823200A
Authority
AU
Australia
Prior art keywords
layergrowth
susceptorless
epitaxial
semiconductor wafer
reactor system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU48232/00A
Inventor
Gerald R. Dietze
Dominic A. Hartmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEH America Inc
Original Assignee
SEH America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEH America Inc filed Critical SEH America Inc
Publication of AU4823200A publication Critical patent/AU4823200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
AU48232/00A 1999-07-14 2000-05-04 Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth Abandoned AU4823200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35319699A 1999-07-14 1999-07-14
US09353196 1999-07-14
PCT/US2000/012334 WO2001006031A1 (en) 1999-07-14 2000-05-04 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth

Publications (1)

Publication Number Publication Date
AU4823200A true AU4823200A (en) 2001-02-05

Family

ID=23388131

Family Applications (1)

Application Number Title Priority Date Filing Date
AU48232/00A Abandoned AU4823200A (en) 1999-07-14 2000-05-04 Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth

Country Status (2)

Country Link
AU (1) AU4823200A (en)
WO (1) WO2001006031A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6293135B2 (en) * 2013-06-06 2018-03-14 イビデン株式会社 Wafer carrier and epitaxial growth apparatus using the same
DE102016212780A1 (en) * 2016-07-13 2018-01-18 Siltronic Ag Device for handling a semiconductor wafer in an epitaxial reactor and method for producing a semiconductor wafer with an epitaxial layer
CN115305566A (en) * 2022-10-12 2022-11-08 广州粤芯半导体技术有限公司 Method for producing epitaxial layer and semiconductor comprising epitaxial layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223320A (en) * 1982-06-22 1983-12-24 Ushio Inc Diffusing method for impurity
JPS59928A (en) * 1982-06-25 1984-01-06 Ushio Inc Photo heating device
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US5863843A (en) * 1996-07-31 1999-01-26 Lucent Technologies Inc. Wafer holder for thermal processing apparatus

Also Published As

Publication number Publication date
WO2001006031A1 (en) 2001-01-25

Similar Documents

Publication Publication Date Title
AU2001249808A1 (en) Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth
AU5324600A (en) Semiconductor wafer carrier
AU5682898A (en) Device for processing semiconductor wafers
SG106591A1 (en) Semiconductor wafer dividing method
AU6040498A (en) Wafer support system
AU2001257584A1 (en) Wafer preparation systems and methods for preparing wafers
AU8070498A (en) Methods for treating semiconductor wafers
EP1087041A4 (en) Production method for silicon wafer and silicon wafer
AU7358994A (en) Semiconductor wafer processing system
AU4626000A (en) Method for transferring wafers and ring
AU2301699A (en) System for the treatment of wafers
AU2679999A (en) Semiconductor wafer processing tapes
AU3893297A (en) Abrasive construction for semiconductor wafer modification
AU5483700A (en) Gas distribution apparatus for semiconductor processing
AU7477800A (en) Gas distribution apparatus for semiconductor processing
AU5608700A (en) Gas distribution apparatus for semiconductor processing
IL148872A0 (en) Module containing controlled mini-environment for atmospheric wafer transport
AU2002332026A1 (en) System for cushioning wafer in wafer carrier
IL122034A0 (en) Thermal processor for semiconductor wafers
AU3837200A (en) Semiconductor device
AU3872900A (en) System and method for controlling process temperatures for semi-conductor wafer
EP1152458A4 (en) Production method for silicon epitaxial wafer and silicon epitaxial wafer
EP1132950A4 (en) Wafer support of semiconductor manufacturing system
HK1015952A1 (en) Group iii-v compound semiconductor wafer
EP1154048A4 (en) Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase