JP6305067B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6305067B2 JP6305067B2 JP2014002723A JP2014002723A JP6305067B2 JP 6305067 B2 JP6305067 B2 JP 6305067B2 JP 2014002723 A JP2014002723 A JP 2014002723A JP 2014002723 A JP2014002723 A JP 2014002723A JP 6305067 B2 JP6305067 B2 JP 6305067B2
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Description
<第1の実施形態に係る半導体装置の構成>
図1を用いて、第1の実施形態に係る半導体装置について説明する。図1(a)は、第1の実施形態に係る半導体装置の上面図であり、図1(b)は、図1(a)のA−A線に沿った断面図である。なお、図1(a)では、構造の理解を容易にするために、半導体基板100、絶縁膜等を図示していない。
次に、図1〜図16を用いて、第1の実施形態に係る半導体装置の製造方法の具体例について説明する。図2(a)〜16(a)は、第1の実施形態に係る半導体装置の製造方法の一部を概略的に示す上面図であり、図2(b)〜16(b)は、図2(a)〜16(a)のA−A線に沿った断面図である。なお、図2(b)〜16(b)では、構造の理解を容易にするために、半導体基板100、絶縁膜等を図示していない。
まず、第1のトランジスタ形成領域1を形成する。
続いて、トランジスタ形成領域1内且つトランジスタ形成領域1の半導体基板100内の第2のソース/ドレイン領域100b上にコンタクトプラグ105を形成する。
第1のトランジスタ形成領域1上に、半導体基板200となるアモルファスゲルマニウムを堆積する。そして、アニール等によって、アモルファスゲルマニウムを結晶化させて、ポリゲルマニウムを形成する。
半導体基板200を、活性領域となる島状構造にエッチングすると同時に、コンタクトプラグ105まで貫通する貫通口204aを半導体基板200に形成する。
半導体基板200上に、トランジスタTr2を形成する。
半導体基板200の、互いに隣接するトランジスタTr2のチャネル領域間と、貫通口204a内とに、ソース/ドレイン領域200a及び200bとなるジャーマナイド膜を形成する。具体的には、図14で説明したように、半導体基板200と、シリサイド材料であるニッケル(Ni)とを反応させることで、ジャーマナイド膜を形成する。
第2のトランジスタ形成領域2内に、コンタクトプラグ105と、ソース/ドレイン領域200bとに接続されるコンタクトプラグ204を形成する。その後、所定の処理を行うことにより、半導体装置を製造する。
次に、図18を用いて、本実施形態に係る比較例について説明する。図18(a)は、比較例に係る半導体装置の上面図であり、図18(b)は、図18(a)のA−A線に沿った断面図である。なお、図18(a)では、構造の理解を容易にするために、半導体基板300、絶縁膜等を図示していない。
上述した第1の実施形態において、第1のトランジスタ形成領域1及び第2のトランジスタ形成領域2とは、TV(Through Via)技術を用いたコンタクトプラグ105及びコンタクトプラグ204によって接続されている。そして、第1のトランジスタ形成領域1上に形成されている第2のトランジスタ形成領域2には、コンタクトプラグ204が形成される開口部内に、ソース/ドレイン領域が形成されている。
次に、第2の実施形態について説明する。第2の実施形態では、半導体基板200の材料及び、その形成方法の点で第1の実施形態と異なる。尚、第2の実施形態において、上述した第1の実施形態と略同一の機能及び構成を有する構成要素については、同一符号を付し、重複説明は必要な場合にのみ行う。
第2の実施形態に係る半導体装置において、半導体基板200として、ガリウム砒素(GaAs)、インジウムガリウム砒素(InGaAs)、インジウム砒素(InAs)、インジウムリン(InP)、インジウムアンチモン(InSb)、インジウムガリウムリン(InGaP)、ガリウムアンチモン(GaSb)、ガリウムリン(GaP)もしくはこれらの化合物が用いられる。
次に、図19を用いて、第2の半導体装置の基本的な製造方法のフローについて概略的に説明する。図19は、第2の半導体装置の基本的な製造方法を示したフローチャートである。
まず、第1のトランジスタ形成領域1を形成する。
続いて、トランジスタ形成領域1内且つトランジスタ形成領域1の半導体基板100内の第2のソース/ドレイン領域100b上にコンタクトプラグ105を形成する。
第1のトランジスタ形成領域1上に、半導体基板200となるインジウムガリウム砒素(InGaAs)基板を貼りつける。
半導体基板200を、活性領域となる島状構造にエッチングすると同時に、コンタクトプラグ105まで貫通する貫通口204aを半導体基板200に形成する。
半導体基板200上に、トランジスタTr2のゲート構造を形成する。
半導体基板200の、互いに隣接するトランジスタTr2のチャネル領域間と、貫通口204a内とに、ソース/ドレイン領域200a及び200bとなる金属-InGaAs合金膜を形成する。具体的には、図14で説明した方法と同様の方法で、金属-InGaAs合金(Ni-InGaAs合金)膜が形成される。
トランジスタ形成領域2内に、コンタクトプラグ105と、ソース/ドレイン領域200bとに接続されるコンタクトプラグ204を形成する。その後、所定の処理を行うことにより、半導体装置を製造する。
上述した第2の実施形態において、半導体基板200は、第1のトランジスタ形成領域1上に、インジウムガリウム砒素(InGaAs)基板等を貼りつけることによって形成されている。そして、上述した第1の実施形態と同様に、第1のトランジスタ形成領域1のシリサイド膜が劣化しない程度の温度で、第2のトランジスタ形成領域2のソース/ドレイン領域を形成できる。
次に、第3の実施形態について説明する。第3の実施形態では、半導体基板200の材料及び、その形成方法の点で第1の実施形態及び第2の実施形態と異なる。尚、第3の実施形態において、上述した第1の実施形態と略同一の機能及び構成を有する構成要素については、同一符号を付し、重複説明は必要な場合にのみ行う。
第3の実施形態に係る半導体装置において、半導体基板200として、亜鉛酸化物(ZnO)、インジウムガリウム亜鉛酸化物(InGaZnO)の酸化物半導体等が用いられる。
次に、図20及び図21を用いて、第3の半導体装置の基本的な製造方法のフローについて概略的に説明する。図20は、第3の半導体装置の基本的な製造方法を示したフローチャートである。図21(a)は、第3の実施形態に係る半導体装置の製造方法の一部を概略的に示す上面図であり、図21(b)は、図21(a)のA−A線に沿った断面図である。なお、図21(b)では、構造の理解を容易にするために、半導体基板100、絶縁膜等を図示していない。
まず、第1のトランジスタ形成領域1を形成する。
続いて、トランジスタ形成領域1内且つトランジスタ形成領域1の半導体基板100内の第2のソース/ドレイン領域100b上にコンタクトプラグ105を形成する。
第1のトランジスタ形成領域1上に、半導体基板200となるインジウムガリウム亜鉛酸化物(InGaZnO)を堆積する。
半導体基板200を、活性領域となる島状構造にエッチングすると同時に、コンタクトプラグ105まで貫通する貫通口204aを半導体基板200に形成する。
半導体基板200上に、トランジスタTr2のゲート構造を形成する。
図21に示すように、半導体基板200の該ゲート構造に覆われていない領域、及び貫通口204a内の酸素(O)を、脱酸素処理によって、除去する。これにより、半導体基板200内に、ソース/ドレイン領域200a(酸素欠損インジウムガリウム亜鉛酸化物:InGaZnO)が形成される。
トランジスタ形成領域2内に、コンタクトプラグ105と、ソース/ドレイン領域200bとに接続されるコンタクトプラグ204を形成する。その後、所定の処理を行うことにより、半導体装置を製造する。
上述した第3の実施形態において、半導体基板200は、第1のトランジスタ形成領域1上に、インジウムガリウム亜鉛酸化物(InGaZnO)等の酸化物を堆積することによって形成されている。そして、第1のトランジスタ形成領域1のシリサイド膜が劣化しない程度の温度で、脱酸素処理を施すことによって、第2のトランジスタ形成領域2のソース/ドレイン領域を形成できる。
なお、上述した各実施形態において、第1のトランジスタ形成領域1の構成及び製造方法は、上述した構成及び製造方法に限らず、種々変形可能である。
1…第1のトランジスタ形成領域、 2…第2のトランジスタ形成領域
3…下層トランジスタ形成領域、 4…上層トランジスタ形成領域
5…第5のトランジスタ形成領域、 6…第6のトランジスタ形成領域
7…第7のトランジスタ形成領域、 8…第8のトランジスタ形成領域
100…半導体基板、 100a…ドレイン領域、 100b…ドレイン領域
101…ゲート絶縁膜、 101a…酸化膜、 102…ゲート電極
102a…ポリシリコン膜、 103…側壁絶縁膜、 103a…シリコン窒化膜
104…層間絶縁膜、 105…コンタクトプラグ、 105a…貫通口
105b…導電層、 106…シリサイド材料金属膜、 200…基板
200a…ドレイン領域、 200b…ドレイン領域、 201…ゲート絶縁膜
201a…絶縁膜、 202…ゲート電極、 202a…タンタル窒化膜
203…層間絶縁膜、 204…コンタクトプラグ、 204a…貫通口
204b…貫通口、 300…半導体基板、 306…配線層
405…コンタクトプラグ、 406…配線層、 407…コンタクトプラグ。
Claims (7)
- 第1の半導体基板上に、複数の第1のトランジスタのゲート構造を形成する工程と、
前記第1のトランジスタのゲート構造が形成されていない前記第1の半導体基板内に複数の第1の拡散領域を形成する工程と、
前記第1の半導体基板及び前記複数の第1のトランジスタを覆う層間絶縁膜を形成する工程と、
前記層間絶縁膜内、且つ前記第1の拡散領域に接触する第1の導電部を形成する工程と、
前記層間絶縁膜上及び前記第1の導電部上に、第2の半導体基板を形成する工程と、
前記第2の半導体基板に、活性領域となる領域と、前記第1の導電部上に前記第2の半導体基板を貫通する貫通口とを形成する工程と、
前記第2の半導体基板上、複数の第2のトランジスタを形成する工程と、
前記第2のトランジスタの形成されていない前記第2の半導体基板内に複数の第2の拡散領域を形成し、前記第2の半導体基板を貫通する貫通口の内壁に第3の拡散領域を形成する工程と、
前記貫通口内に形成され、前記第1の導電部及び前記第3の拡散領域に接する第2の導電部を形成する工程と、
を具備する半導体装置の製造方法。 - 前記第2の拡散領域及び第3の拡散領域を形成する工程は、
前記第2のトランジスタが形成されていない前記第2の半導体基板上、且つ前記貫通口内に、金属半導体化合物を堆積する工程と、
前記金属半導体化合物、及び前記第2の半導体基板を反応させて、シリサイド膜を形成する工程と、を含む請求項1に記載の半導体装置の製造方法。 - 前記シリサイド膜を形成する工程は、500℃未満の温度のアニールによって実行される請求項2に記載の半導体装置の製造方法。
- 前記第2の半導体基板は、シリコン(Si)、ポリシリコン(poly-Si)、アモルファスシリコン(a-Si)、ゲルマニウム(Ge)、ポリゲルマニウム(poly-Ge)、アモルファスゲルマニウム(a-Ge)、ゲルマニウムスズ(GeSn) 、ポリゲルマニウムスズ(poly-GeSn)、アモルファスゲルマニウムスズ(a-GeSn)もしくはこれらの化合物である請求項1乃至3の何れか一項に記載の半導体装置の製造方法。
- 前記第2の半導体基板は、ガリウム砒素(GaAs)、インジウムガリウム砒素(InGaAs)、インジウム砒素(InAs)、インジウムリン(InP)、インジウムアンチモン(InSb)、インジウムガリウムリン(InGaP)、ガリウムアンチモン(GaSb)、ガリウムリン(GaP)もしくはこれらの化合物である請求項1乃至3の何れか一項に記載の半導体装置の製造方法。
- 前記第2の拡散領域及び第3の拡散領域を形成する工程は、
前記第2のトランジスタが形成されていない前記第2の半導体基板内、且つ前記貫通口内の酸素を除去する工程を含む請求項1に記載の半導体装置の製造方法。 - 前記第2の半導体基板は、亜鉛酸化物(ZnO)、インジウムガリウム亜鉛酸化物(InGaZnO)の酸化物半導体である請求項1または6に記載の半導体装置の製造方法。
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