JP6222800B2 - 基板貫通バイアを有する半導体構造および製造方法 - Google Patents

基板貫通バイアを有する半導体構造および製造方法 Download PDF

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JP6222800B2
JP6222800B2 JP2012234265A JP2012234265A JP6222800B2 JP 6222800 B2 JP6222800 B2 JP 6222800B2 JP 2012234265 A JP2012234265 A JP 2012234265A JP 2012234265 A JP2012234265 A JP 2012234265A JP 6222800 B2 JP6222800 B2 JP 6222800B2
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substrate
doped region
region
depth
concentration
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JP2013093579A5 (enExample
JP2013093579A (ja
Inventor
ビー．ダオ トゥイ
ビー．ダオ トゥイ
イー．キーズ ジョエル
イー．キーズ ジョエル
エイ．ルエダ ヘルナン
エイ．ルエダ ヘルナン
ダブリュ．サンダース ポール
ダブリュ．サンダース ポール
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/213—Cross-sectional shapes or dispositions
    • H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012234265A 2011-10-24 2012-10-24 基板貫通バイアを有する半導体構造および製造方法 Expired - Fee Related JP6222800B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/279,776 US8518764B2 (en) 2011-10-24 2011-10-24 Semiconductor structure having a through substrate via (TSV) and method for forming
US13/279,776 2011-10-24

Publications (3)

Publication Number Publication Date
JP2013093579A JP2013093579A (ja) 2013-05-16
JP2013093579A5 JP2013093579A5 (enExample) 2015-11-26
JP6222800B2 true JP6222800B2 (ja) 2017-11-01

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JP2012234265A Expired - Fee Related JP6222800B2 (ja) 2011-10-24 2012-10-24 基板貫通バイアを有する半導体構造および製造方法

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Country Link
US (1) US8518764B2 (enExample)
JP (1) JP6222800B2 (enExample)
CN (1) CN103066059B (enExample)

Cited By (1)

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US11450682B2 (en) 2020-03-12 2022-09-20 Kioxia Corporation Semiconductor memory device

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US9275933B2 (en) * 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US9196671B2 (en) * 2012-11-02 2015-11-24 International Business Machines Corporation Integrated decoupling capacitor utilizing through-silicon via
KR101968351B1 (ko) * 2013-01-28 2019-08-13 서울대학교산학협력단 반도체 장치 및 그 제조 방법
US8927427B2 (en) * 2013-04-29 2015-01-06 International Business Machines Corporation Anticipatory implant for TSV
JP6219140B2 (ja) * 2013-11-22 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
US9373613B2 (en) * 2013-12-31 2016-06-21 Skyworks Solutions, Inc. Amplifier voltage limiting using punch-through effect
JP6305067B2 (ja) 2014-01-09 2018-04-04 株式会社東芝 半導体装置の製造方法
EP3118892B1 (en) * 2014-03-12 2018-05-02 Thruchip Japan Inc. Laminated semiconductor integrated circuit device
CN104392993A (zh) * 2014-12-08 2015-03-04 江苏博普电子科技有限责任公司 一种基于高阻硅衬底的ldmos mmic芯片
US10242932B2 (en) 2016-06-24 2019-03-26 Infineon Technologies Ag LDMOS transistor and method
US9960229B2 (en) 2016-06-24 2018-05-01 Infineon Technologies Ag Semiconductor device including a LDMOS transistor
US9875933B2 (en) 2016-06-24 2018-01-23 Infineon Technologies Ag Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures
US10622284B2 (en) 2016-06-24 2020-04-14 Infineon Technologies Ag LDMOS transistor and method
US10050139B2 (en) 2016-06-24 2018-08-14 Infineon Technologies Ag Semiconductor device including a LDMOS transistor and method
WO2018004662A1 (en) * 2016-07-01 2018-01-04 Intel Corporation Methods and apparatus to prevent through-silicon-via shorting
US10020270B2 (en) * 2016-09-29 2018-07-10 Infineon Technologies Ag Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method

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JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
JP2002343968A (ja) * 2001-05-14 2002-11-29 Toshiba Corp 半導体装置、半導体装置の製造方法
US6521923B1 (en) * 2002-05-25 2003-02-18 Sirenza Microdevices, Inc. Microwave field effect transistor structure on silicon carbide substrate
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
US7102184B2 (en) 2003-06-16 2006-09-05 Micron Technology, Inc. Image device and photodiode structure
US7087959B2 (en) * 2004-08-18 2006-08-08 Agere Systems Inc. Metal-oxide-semiconductor device having an enhanced shielding structure
US7670896B2 (en) * 2006-11-16 2010-03-02 International Business Machines Corporation Method and structure for reducing floating body effects in MOSFET devices
US7843064B2 (en) 2007-12-21 2010-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and process for the formation of TSVs
JP2009170747A (ja) * 2008-01-18 2009-07-30 Toshiba Corp 半導体装置及びその製造方法
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
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Publication number Priority date Publication date Assignee Title
US11450682B2 (en) 2020-03-12 2022-09-20 Kioxia Corporation Semiconductor memory device

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US20130099312A1 (en) 2013-04-25
JP2013093579A (ja) 2013-05-16
CN103066059A (zh) 2013-04-24
US8518764B2 (en) 2013-08-27
CN103066059B (zh) 2018-05-22

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