JP2011193020A5 - - Google Patents

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JP2011193020A5
JP2011193020A5 JP2011120724A JP2011120724A JP2011193020A5 JP 2011193020 A5 JP2011193020 A5 JP 2011193020A5 JP 2011120724 A JP2011120724 A JP 2011120724A JP 2011120724 A JP2011120724 A JP 2011120724A JP 2011193020 A5 JP2011193020 A5 JP 2011193020A5
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silicon carbide
layer
semiconductor device
power semiconductor
region
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JP2011120724A
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JP2011193020A (ja
JP5687956B2 (ja
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JP2011120724A 2003-04-24 2011-05-30 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスならびにその製造方法 Expired - Lifetime JP5687956B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/422,130 US7074643B2 (en) 2003-04-24 2003-04-24 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US10/422,130 2003-04-24

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JP2006508775A Division JP5265111B2 (ja) 2003-04-24 2004-02-19 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスの製造方法

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JP2011193020A JP2011193020A (ja) 2011-09-29
JP2011193020A5 true JP2011193020A5 (enExample) 2012-04-12
JP5687956B2 JP5687956B2 (ja) 2015-03-25

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JP2006508775A Expired - Lifetime JP5265111B2 (ja) 2003-04-24 2004-02-19 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスの製造方法
JP2011120724A Expired - Lifetime JP5687956B2 (ja) 2003-04-24 2011-05-30 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスならびにその製造方法

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JP2006508775A Expired - Lifetime JP5265111B2 (ja) 2003-04-24 2004-02-19 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスの製造方法

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US (2) US7074643B2 (enExample)
EP (2) EP2463894B1 (enExample)
JP (2) JP5265111B2 (enExample)
KR (2) KR101126836B1 (enExample)
CN (1) CN100472737C (enExample)
CA (1) CA2522820A1 (enExample)
TW (1) TWI340994B (enExample)
WO (1) WO2004097926A1 (enExample)

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