JP5265111B2 - 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスの製造方法 - Google Patents
自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスの製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 300
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 285
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000002513 implantation Methods 0.000 claims description 128
- 239000002019 doping agent Substances 0.000 claims description 88
- 239000007943 implant Substances 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 22
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 227
- 239000000758 substrate Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005527 interface trap Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- -1 region Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
Claims (13)
- 第1の伝導型の炭化珪素層の上に第1の窓を設けるために、第1のパターン形成ステップで単一のマスク層をパターン形成するステップと
第1の伝導型のソース領域および前記第1の伝導型と反対の第2の伝導型の埋込み炭化珪素領域を形成するために、前記第1の窓を用いてドーパントを注入するステップと、
前記第1の窓よりも大きな第2の窓を設けるために、第2のパターン形成ステップで前記単一のマスク層をさらにパターン形成するステップと、
前記第1の伝導型の炭化珪素層の中に第2の伝導型のウェル領域を形成するために、前記第2の窓を用いてドーパントを注入するステップと、
前記第2の窓よりも大きな第3の窓を設けるために、第3のパターン形成ステップで前記第2の窓を設けた前記単一のマスク層をさらにパターン形成するステップと、
前記ソース領域と次に形成されるソース接点との間の前記ソース領域の上に閾値調整領域を形成するために、前記第3の窓を用いてドーパントを注入するステップと
を含むことを特徴とする炭化珪素パワーデバイスの製造方法。 - 前記第1の伝導型はn型炭化珪素であり、前記第2の伝導型はp型炭化珪素であり、さらに前記埋込み炭化珪素領域は埋込みp型炭化珪素領域を含み、前記ウェル領域はpウェル領域を含むことを特徴とする請求項1に記載の方法。
- 前記単一のマスク層を前記第1のn型炭化珪素層の第1の表面の上に形成するステップと、
第1の注入マスクを設けるために、前記第1のパターン形成ステップで前記単一のマスク層をパターン形成するステップであって、前記第1の注入マスクは、前記炭化珪素パワーデバイスの前記ソース領域に対応する少なくとも1つの窓を有する前記ステップと、次いで
n型ソース領域を設けるために、前記少なくとも1つの窓を有する前記第1の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記n型ソース領域は、前記第1のn型炭化珪素層の前記第1の表面まで延在し、前記第1のn型炭化珪素層よりも高いキャリア濃度を有する前記ステップと、
前記n型ソース領域に隣接して前記埋込みp型炭化珪素領域を設けるために、前記少なくとも1つの窓を有する前記第1の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記埋込みp型炭化珪素領域は、前記n型ソース領域の深さよりも深い前記第1のn型炭化珪素層の中の深さに配置される前記ステップと、次いで
第2の注入マスクを設けるために、前記第2のパターン形成ステップで前記第1の注入マスクをエッチングするステップであって、前記第2の注入マスクは、前記pウェル領域に対応する少なくとも1つの窓に対応し、かつ前記エッチングによって拡幅された前記第1の注入マスクの前記少なくとも1つの窓に対応する少なくとも1つの窓を有する前記ステップと、次いで、
前記pウェル領域を設けるために前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記pウェル領域は前記埋込みp型炭化珪素領域まで延在する前記ステップと、
をさらに含むことを特徴とする請求項2に記載の方法。 - 第1のn型炭化珪素層の中に、ソース領域、埋込みp型炭化珪素領域、pウェル領域、および、閾値調整領域を形成するための窓を設けるために、前記第1、第2および第3のパターン形成ステップで前記単一のマスク層をパターン形成するステップと、
前記マスク層の第3の窓を利用して前記閾値調整領域を形成するステップであって、前記第3の窓は、前記第2の窓を有する前記マスク層をさらにエッチングすることを含む前記第3のパターン形成ステップで設けられる前記ステップとを
さらに含むことを特徴とする請求項2に記載の方法。 - 前記単一のマスク層を第1のn型炭化珪素層の上に形成するステップと、
前記第1のパターン形成ステップにおいて第1の注入マスクを設けるために前記単一のマスク層をパターン形成するステップであって、前記第1の注入マスクは、前記炭化珪素パワーデバイスの前記ソース領域に対応する少なくとも1つの窓を有している前記ステップと、次いで
n型ソース領域を設けるために前記少なくとも1つの窓を有する前記第1の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記n型ソース領域は、前記第1のn型炭化珪素層の第1の表面まで延在し、前記第1のn型炭化珪素層よりも高いキャリア濃度を有している前記ステップと、
前記n型ソース領域に隣接して前記埋込みp型炭化珪素領域を設けるために、前記第1の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記p型ドーパントは、n型ソース領域を設けるために前記少なくとも1つの窓を有する前記第1の注入マスクを利用し、前記n型ドーパントを前記第1のn型炭化珪素層の中に注入するために利用された注入エネルギーよりも高い注入エネルギーを利用して注入される前記ステップと、次いで
前記第2のパターン形成ステップにおいて第2の注入マスクを設けるために前記第1の注入マスクをエッチングするステップであって、前記第2の注入マスクは、前記pウェル領域に対応し、かつ前記エッチングによって拡幅された前記第1の注入マスクの前記少なくとも1つの窓に対応する少なくとも1つの窓を有している前記ステップと、次いで
前記pウェル領域を設けるために前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記p型ドーパントは、前記pウェル領域が前記埋込みp型炭化珪素領域に達するような注入エネルギーを利用して注入される前記ステップと、
をさらに含むことを特徴とする請求項2に記載の方法。 - 前記pウェル領域を設けるために前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入する前記ステップは、前記埋込みp型炭化珪素領域のキャリア濃度よりも低い前記pウェル領域のキャリア濃度が備わるように、前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップを含むことを特徴とする請求項5に記載の方法。
- 前記pウェル領域を設けるために前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入する前記ステップの後に、
前記第3のパターン形成ステップにおいて第3の注入マスクを設けるために前記第2の注入マスクをエッチングするステップであって、前記第3の注入マスクは、閾値調整領域に対応し、かつ前記エッチングによって拡幅された前記第2の注入マスクの前記少なくとも1つの窓に対応する少なくとも1つの窓を有する前記ステップと、次いで
前記閾値調整領域を設けるために前記第3の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入するステップと、
が続くことを特徴とする請求項5に記載の方法。 - 前記閾値調整領域を設けるために前記第3の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入する前記ステップは、前記第3の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中へ0.01μmから0.5μmの深さまで前記第1のn型炭化珪素層の中に注入するステップを含むことを特徴とする請求項7に記載の方法。
- 前記第3の注入マスクを除去するステップと、
第4の注入マスクを形成するステップであって、前記第4の注入マスクは、少なくとも2つの窓により形成された2つの前記ソース領域の内側で、前記第1のn型炭化珪素層の前記第1の表面を露出させる窓を設けるためにパターン形成される前記ステップと、
p型炭化珪素プラグ領域を設けるために前記第4の注入マスクを利用してp型ドーパントを注入するステップであって、前記プラグ領域は、前記第1のn型炭化珪素層の中に延在して前記埋込みp型炭化珪素領域に接触する前記ステップと、
ゲート酸化膜を前記第1のn型炭化珪素層の前記第1の表面の上に形成するステップと、
ゲート接点を前記ゲート酸化膜の上に形成するステップと、
ソース接点を前記ソース領域および前記プラグ領域の上に形成するステップと、
ドレイン接点を前記第1の表面に対向する前記第1のn型炭化珪素層の上に形成するステップと、
をさらに含むことを特徴とする請求項7に記載の方法。 - 第2のn型炭化珪素層を前記第1の表面に対向する前記第1のn型炭化珪素層の表面の上に形成するステップであって、前記第2のn型炭化珪素層は、前記第1のn型炭化珪素層のキャリア濃度よりも高いキャリア濃度を有することをさらに含むことを特徴とする請求項9に記載の方法。
- 第1の伝導型炭化珪素層の中に、第1の伝導型のソース領域、前記第1の伝導型と反対の第2の伝導型の埋込み炭化珪素領域、および第2の伝導型のウェル領域を形成するための窓を設けるために、単一のマスク層を連続的にパターン形成するステップを備える炭化珪素パワーデバイスの製造方法であって、
前記第1の伝導型はn型炭化珪素であり、前記第2の伝導型はp型炭化珪素であり、さらに、前記埋込み炭化珪素領域は埋込みp型炭化珪素領域を含み、前記ウェル領域はpウェル領域を含み、
マスク層を連続的にパターン形成する前記ステップ、前記ソース領域および前記埋込みp型炭化珪素領域を形成するステップ、ならびに前記pウェル領域を形成するステップは、
前記マスク層を第1のn型炭化珪素層の上に形成するステップと、
第1の注入マスクを設けるために前記マスク層をパターン形成するステップであって、前記第1の注入マスクは、前記炭化珪素パワーデバイスのソース領域に対応する少なくとも1つの窓を有している前記ステップと、次いで
n型ソース領域を設けるために前記第1の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記n型ソース領域は、前記第1のn型炭化珪素層の第1の表面まで延在し、前記第1のn型炭化珪素層よりも高いキャリア濃度を有している前記ステップと、
前記n型ソース領域に隣接して前記埋込みp型炭化珪素領域を設けるために、前記第1の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記p型ドーパントは、n型ソース領域を設けるために前記第1の注入マスクを利用し、前記n型ドーパントを前記第1のn型炭化珪素層の中に注入するために利用された注入エネルギーよりも高い注入エネルギーを利用して注入される前記ステップと、
第2の注入マスクを設けるために前記第1の注入マスクをエッチングするステップであって、前記第2の注入マスクは、pウェル領域に対応し、かつ前記エッチングによって拡幅された前記第1の注入マスクの前記少なくとも1つの窓に対応する、少なくとも1つの窓を有している前記ステップと、次いで
前記pウェル領域を設けるために前記第2の注入マスクを利用してp型ドーパントを前記第1のn型炭化珪素層の中に注入するステップであって、前記p型ドーパントは、前記pウェル領域が前記埋込みp型炭化珪素領域に達するような注入エネルギーを利用して注入される前記ステップと、
第3の注入マスクを設けるために前記第2の注入マスクをエッチングするステップであって、前記第3の注入マスクは、閾値調整領域に対応し、かつ前記エッチングによって拡幅された前記第2の注入マスクの前記少なくとも1つの窓に対応する少なくとも1つの窓を有している前記ステップと、次いで
前記閾値調整領域を設けるために前記第3の注入マスクを利用してn型ドーパントを前記第1のn型炭化珪素層の中に注入するステップと、次いで
前記第3の注入マスクを除去するステップと、
n型炭化珪素エピタキシャル層を前記第1のn型炭化珪素層の前記第1の表面の上に形成するステップと、
を含むことを特徴とする方法。 - n型炭化珪素エピタキシャル層を形成する前記ステップの前に、
第4の注入マスクを形成するステップであって、前記第4の注入マスクは、少なくとも2つの窓により形成された2つの前記ソース領域の内側で、前記第1のn型炭化珪素層の一部を露出させる窓を設けるためにパターン形成される前記ステップと、
p型炭化珪素プラグ領域を設けるために前記第4の注入マスクを利用してp型ドーパントを注入するステップであって、前記プラグ領域は、前記第1のn型炭化珪素層の中に延びて前記埋込みp型炭化珪素領域に接触する前記ステップと、
前記注入されたドーパントを活性化するステップと、
が先行し、
n型炭化珪素エピタキシャル層を形成する前記ステップの後には、
ゲート酸化膜をn型炭化珪素エピタキシャル層の上に形成するステップと、
ゲート接点を前記ゲート酸化膜の上に形成するステップと、
ソース接点を前記ソース領域および前記プラグ領域の上に形成するステップと、
ドレイン接点を前記第1の表面に対向する前記第1のn型炭化珪素層の上に形成するステップと、
が続くことを特徴とする請求項11に記載の方法。 - 前記第1の表面に対向する前記第1のn型炭化珪素層の表面の上に、第2のn型炭化珪素層を形成するステップであって、前記第2のn型炭化珪素層は、前記第1のn型炭化珪素層のキャリア濃度よりも高いキャリア濃度を有することをさらに含むこと特徴とする請求項12に記載の方法。
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US11222782B2 (en) | 2020-01-17 | 2022-01-11 | Microchip Technology Inc. | Self-aligned implants for silicon carbide (SiC) technologies and fabrication method |
US11615953B2 (en) | 2020-01-17 | 2023-03-28 | Microchip Technology Inc. | Silicon carbide semiconductor device with a contact region having edges recessed from edges of the well region |
Also Published As
Publication number | Publication date |
---|---|
JP2011193020A (ja) | 2011-09-29 |
WO2004097926A1 (en) | 2004-11-11 |
US7381992B2 (en) | 2008-06-03 |
JP5687956B2 (ja) | 2015-03-25 |
EP2463894B1 (en) | 2016-12-07 |
US20040211980A1 (en) | 2004-10-28 |
US7074643B2 (en) | 2006-07-11 |
KR101078470B1 (ko) | 2011-10-31 |
KR101126836B1 (ko) | 2012-03-23 |
US20060237728A1 (en) | 2006-10-26 |
TW200423235A (en) | 2004-11-01 |
JP2006524433A (ja) | 2006-10-26 |
CN1777982A (zh) | 2006-05-24 |
EP1616347B1 (en) | 2013-10-23 |
KR20050118735A (ko) | 2005-12-19 |
CA2522820A1 (en) | 2004-11-11 |
KR20110036651A (ko) | 2011-04-07 |
TWI340994B (en) | 2011-04-21 |
EP1616347A1 (en) | 2006-01-18 |
CN100472737C (zh) | 2009-03-25 |
EP2463894A1 (en) | 2012-06-13 |
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