JP6253518B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 46
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000012535 impurity Substances 0.000 claims description 77
- 238000002513 implantation Methods 0.000 claims description 45
- 238000005468 ion implantation Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 52
- 238000012217 deletion Methods 0.000 description 19
- 230000037430 deletion Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Description
<装置構成>
図1は本発明に係る実施の形態1の炭化珪素半導体装置の製造方法によって得られるnチャネル型のSiC−MOSFET100の構成を示す断面図である。
次に、製造工程を順に示す断面図である図2〜図5を用いて、SiC−MOSFET100の製造方法について説明する。
次に、ドライエッチング処理および犠牲酸化処理を用いてエピタキシャル層2の表面を50nm〜150nmの厚さ除去する効果について説明する。
以上説明した本発明に係る実施の形態1の半導体装置の製造方法においては、p型のウェル領域3は、注入エネルギーが350keVまたは400keVのように1回のイオン注入で形成するものとして説明したが、ウェル領域3の形成に多段階のイオン注入を用いても良い。
本発明に係る実施の形態1の半導体装置の製造方法においては、p型のウェル領域3を1段階のイオン注入で形成する例について説明し、実施の形態2の半導体装置の製造方法においては、p型のウェル領域3を2段階のイオン注入で形成する例について説明したが、閾値電圧Vthを調整するために、ウェル領域3にn型不純物である窒素(N)をイオン注入しても良い。
Claims (7)
- (a)第1導電型の炭化珪素半導体層の上層部に第2導電型の第1の不純物をイオン注入してウェル領域を選択的に形成する工程と、
(b)前記ウェル領域の上層部に第1導電型の第2の不純物をイオン注入してトランジスタの活性領域を選択的に形成する工程と、
(c)前記工程(b)の後、注入不純物を活性化させるアニール処理を行う工程と、
(d)前記工程(c)の後、前記炭化珪素半導体層を所定厚さ除去する工程と、
(e)前記工程(d)の後、前記活性領域上から前記ウェル領域上を覆うようにゲート絶縁膜およびゲート電極を積層して形成する工程と、を備え、
前記工程(d)は、
(d−1)前記炭化珪素半導体層をエッチングによって第1の厚さ除去する工程と、
(d−2)前記炭化珪素半導体層を熱酸化して熱酸化膜を形成した後、前記熱酸化膜を除去することで前記炭化珪素半導体層を第2の厚さ除去する工程と、を含み、
前記所定厚さは、前記第1の厚さと前記第2の厚さとを合わせた厚さであって、その範囲は50nm〜150nmであることを特徴とする、炭化珪素半導体装置の製造方法。 - 前記工程(d−2)は、
前記炭化珪素半導体層を複数回に分けて熱酸化し、熱酸化のたびに形成される前記熱酸化膜をその都度除去することで前記炭化珪素半導体層を前記第2の厚さ除去する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(d)は、
前記工程(d−1)を行った後、前記(d−2)を行う、請求項1または請求項2記載の炭化珪素半導体装置の製造方法。 - 前記工程(a)は、
前記第1の不純物を異なる注入エネルギーおよび異なる不純物面密度で複数回に分けてイオン注入することで前記ウェル領域を形成する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(a)は、
前記第1の不純物をイオン注入した後、第1導電型の第3の不純物を、前記第1の不純物の注入エネルギーよりも低い注入エネルギーで追加イオン注入する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(a)は、
前記第1の不純物を異なる注入エネルギーおよび異なる不純物面密度で複数回に分けてイオン注入した後、第1導電型の第3の不純物を、前記第1の不純物の注入エネルギーの何れよりも低い注入エネルギーで追加イオン注入する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記第3の不純物は窒素である、請求項5または請求項6記載の炭化珪素半導体装置の製造方法。
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