JP2013545296A5 - - Google Patents

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Publication number
JP2013545296A5
JP2013545296A5 JP2013535075A JP2013535075A JP2013545296A5 JP 2013545296 A5 JP2013545296 A5 JP 2013545296A5 JP 2013535075 A JP2013535075 A JP 2013535075A JP 2013535075 A JP2013535075 A JP 2013535075A JP 2013545296 A5 JP2013545296 A5 JP 2013545296A5
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JP
Japan
Prior art keywords
termination
trench
substrate
termination structure
schottky diode
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JP2013535075A
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English (en)
Japanese (ja)
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JP2013545296A (ja
JP5990525B2 (ja
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Priority claimed from US12/909,033 external-priority patent/US8928065B2/en
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Publication of JP2013545296A5 publication Critical patent/JP2013545296A5/ja
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JP2013535075A 2010-10-21 2011-10-20 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス Active JP5990525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/909,033 US8928065B2 (en) 2010-03-16 2010-10-21 Trench DMOS device with improved termination structure for high voltage applications
US12/909,033 2010-10-21
PCT/US2011/057020 WO2012054686A2 (en) 2010-10-21 2011-10-20 Trench dmos device with improved termination structure for high voltage applications

Publications (3)

Publication Number Publication Date
JP2013545296A JP2013545296A (ja) 2013-12-19
JP2013545296A5 true JP2013545296A5 (enExample) 2014-11-27
JP5990525B2 JP5990525B2 (ja) 2016-09-14

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JP2013535075A Active JP5990525B2 (ja) 2010-10-21 2011-10-20 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス

Country Status (7)

Country Link
US (1) US8928065B2 (enExample)
EP (1) EP2630661B1 (enExample)
JP (1) JP5990525B2 (enExample)
KR (1) KR101836888B1 (enExample)
CN (1) CN103180958A (enExample)
TW (1) TWI565064B (enExample)
WO (1) WO2012054686A2 (enExample)

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US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
TWI469353B (zh) * 2012-05-04 2015-01-11 Great Power Semiconductor Corp 溝槽式功率金氧半場效電晶體與其製造方法
CN103426906B (zh) * 2012-05-21 2016-05-04 科轩微电子股份有限公司 沟槽式功率金氧半场效晶体管与其制造方法
US9105494B2 (en) * 2013-02-25 2015-08-11 Alpha and Omega Semiconductors, Incorporated Termination trench for power MOSFET applications
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
TWI546970B (zh) * 2014-05-13 2016-08-21 帥群微電子股份有限公司 半導體元件的終端結構及其製造方法
US9899477B2 (en) * 2014-07-18 2018-02-20 Infineon Technologies Americas Corp. Edge termination structure having a termination charge region below a recessed field oxide region
WO2016080322A1 (ja) * 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
CN105720109A (zh) * 2014-12-05 2016-06-29 无锡华润上华半导体有限公司 一种沟槽型肖特基势垒二极管及其制备方法
TWI566410B (zh) * 2014-12-12 2017-01-11 漢磊科技股份有限公司 半導體元件、終端結構及其製造方法
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
US9716187B2 (en) * 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
TWI601291B (zh) * 2015-10-07 2017-10-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
TWI563570B (en) * 2015-11-23 2016-12-21 Pfc Device Holdings Ltd Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)
CN106816478B (zh) * 2015-12-01 2019-09-13 敦南科技股份有限公司 二极管元件及其制造方法
JP2017139289A (ja) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 ダイオード
US9525045B1 (en) 2016-03-10 2016-12-20 Vanguard International Semiconductor Corporation Semiconductor devices and methods for forming the same
US9859448B2 (en) * 2016-05-06 2018-01-02 The Aerospace Corporation Single-event burnout (SEB) hardened power schottky diodes, and methods of making and using the same
CN106129126A (zh) * 2016-08-31 2016-11-16 上海格瑞宝电子有限公司 一种沟槽肖特基二极管及其制备方法
WO2018146791A1 (ja) * 2017-02-10 2018-08-16 三菱電機株式会社 半導体装置
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN109244136B (zh) * 2018-09-19 2021-07-27 电子科技大学 槽底肖特基接触SiC MOSFET器件
CN111092113B (zh) * 2018-10-24 2023-06-02 力士科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
TWI681458B (zh) * 2018-10-24 2020-01-01 禾鼎科技股份有限公司 金氧半場效應電晶體之終端區結構及其製造方法
CN109742135B (zh) * 2018-12-03 2022-05-20 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN110444583B (zh) * 2019-08-08 2023-04-11 江苏芯长征微电子集团股份有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN110690115B (zh) * 2019-10-15 2022-12-13 扬州虹扬科技发展有限公司 一种沟槽式肖特基二极管终端防护结构的制备方法
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN115188802A (zh) * 2022-09-08 2022-10-14 深圳芯能半导体技术有限公司 浮动环的结构、制造方法及电子设备
CN117936573B (zh) * 2024-01-25 2025-01-14 赛晶亚太半导体科技(浙江)有限公司 一种igbt半导体结构及其制造方法
CN119451140B (zh) * 2025-01-08 2025-03-14 通威微电子有限公司 一种mps二极管及其制作方法

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US7750398B2 (en) 2006-09-26 2010-07-06 Force-Mos Technology Corporation Trench MOSFET with trench termination and manufacture thereof
JP2007258742A (ja) * 2007-05-23 2007-10-04 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
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