JP5990525B2 - 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス - Google Patents

改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス Download PDF

Info

Publication number
JP5990525B2
JP5990525B2 JP2013535075A JP2013535075A JP5990525B2 JP 5990525 B2 JP5990525 B2 JP 5990525B2 JP 2013535075 A JP2013535075 A JP 2013535075A JP 2013535075 A JP2013535075 A JP 2013535075A JP 5990525 B2 JP5990525 B2 JP 5990525B2
Authority
JP
Japan
Prior art keywords
termination
trench
schottky diode
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013535075A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013545296A5 (enExample
JP2013545296A (ja
Inventor
チ−ウェイ・スー
フローリン・ウドレア
イ−イン・リン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay General Semiconductor LLC
Original Assignee
Vishay General Semiconductor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay General Semiconductor LLC filed Critical Vishay General Semiconductor LLC
Publication of JP2013545296A publication Critical patent/JP2013545296A/ja
Publication of JP2013545296A5 publication Critical patent/JP2013545296A5/ja
Application granted granted Critical
Publication of JP5990525B2 publication Critical patent/JP5990525B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2013535075A 2010-10-21 2011-10-20 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス Active JP5990525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/909,033 2010-10-21
US12/909,033 US8928065B2 (en) 2010-03-16 2010-10-21 Trench DMOS device with improved termination structure for high voltage applications
PCT/US2011/057020 WO2012054686A2 (en) 2010-10-21 2011-10-20 Trench dmos device with improved termination structure for high voltage applications

Publications (3)

Publication Number Publication Date
JP2013545296A JP2013545296A (ja) 2013-12-19
JP2013545296A5 JP2013545296A5 (enExample) 2014-11-27
JP5990525B2 true JP5990525B2 (ja) 2016-09-14

Family

ID=45975878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013535075A Active JP5990525B2 (ja) 2010-10-21 2011-10-20 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス

Country Status (7)

Country Link
US (1) US8928065B2 (enExample)
EP (1) EP2630661B1 (enExample)
JP (1) JP5990525B2 (enExample)
KR (1) KR101836888B1 (enExample)
CN (1) CN103180958A (enExample)
TW (1) TWI565064B (enExample)
WO (1) WO2012054686A2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318623B2 (en) * 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
TWI469353B (zh) * 2012-05-04 2015-01-11 Great Power Semiconductor Corp 溝槽式功率金氧半場效電晶體與其製造方法
CN103426906B (zh) * 2012-05-21 2016-05-04 科轩微电子股份有限公司 沟槽式功率金氧半场效晶体管与其制造方法
US9105494B2 (en) * 2013-02-25 2015-08-11 Alpha and Omega Semiconductors, Incorporated Termination trench for power MOSFET applications
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
TWI546970B (zh) * 2014-05-13 2016-08-21 帥群微電子股份有限公司 半導體元件的終端結構及其製造方法
US20160020279A1 (en) * 2014-07-18 2016-01-21 International Rectifier Corporation Edge Termination Using Guard Rings Between Recessed Field Oxide Regions
US20180012974A1 (en) * 2014-11-18 2018-01-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN105720109A (zh) * 2014-12-05 2016-06-29 无锡华润上华半导体有限公司 一种沟槽型肖特基势垒二极管及其制备方法
TWI566410B (zh) * 2014-12-12 2017-01-11 漢磊科技股份有限公司 半導體元件、終端結構及其製造方法
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
US9716187B2 (en) * 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
TWI601291B (zh) * 2015-10-07 2017-10-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
TWI563570B (en) * 2015-11-23 2016-12-21 Pfc Device Holdings Ltd Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)
CN106816478B (zh) * 2015-12-01 2019-09-13 敦南科技股份有限公司 二极管元件及其制造方法
JP2017139289A (ja) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 ダイオード
US9525045B1 (en) 2016-03-10 2016-12-20 Vanguard International Semiconductor Corporation Semiconductor devices and methods for forming the same
US9859448B2 (en) * 2016-05-06 2018-01-02 The Aerospace Corporation Single-event burnout (SEB) hardened power schottky diodes, and methods of making and using the same
CN106129126A (zh) * 2016-08-31 2016-11-16 上海格瑞宝电子有限公司 一种沟槽肖特基二极管及其制备方法
DE112017007040T5 (de) * 2017-02-10 2019-10-24 Mitsubishi Electric Corporation Halbleitereinheit
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN109244136B (zh) * 2018-09-19 2021-07-27 电子科技大学 槽底肖特基接触SiC MOSFET器件
CN111092113B (zh) * 2018-10-24 2023-06-02 力士科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
TWI681458B (zh) * 2018-10-24 2020-01-01 禾鼎科技股份有限公司 金氧半場效應電晶體之終端區結構及其製造方法
CN109742135B (zh) * 2018-12-03 2022-05-20 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN110444583B (zh) * 2019-08-08 2023-04-11 江苏芯长征微电子集团股份有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN110690115B (zh) * 2019-10-15 2022-12-13 扬州虹扬科技发展有限公司 一种沟槽式肖特基二极管终端防护结构的制备方法
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN115188802A (zh) * 2022-09-08 2022-10-14 深圳芯能半导体技术有限公司 浮动环的结构、制造方法及电子设备
CN117936573B (zh) * 2024-01-25 2025-01-14 赛晶亚太半导体科技(浙江)有限公司 一种igbt半导体结构及其制造方法
CN119451140B (zh) * 2025-01-08 2025-03-14 通威微电子有限公司 一种mps二极管及其制作方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2912508B2 (ja) 1992-11-13 1999-06-28 シャープ株式会社 縦型ｍｏｓトランジスタの製造方法
US6309929B1 (en) 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
US6396090B1 (en) * 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
JP4736180B2 (ja) * 2000-11-29 2011-07-27 株式会社デンソー 半導体装置およびその製造方法
US6621107B2 (en) 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US7045859B2 (en) 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
US6657255B2 (en) * 2001-10-30 2003-12-02 General Semiconductor, Inc. Trench DMOS device with improved drain contact
US7323402B2 (en) 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
TW583748B (en) 2003-03-28 2004-04-11 Mosel Vitelic Inc The termination structure of DMOS device
US7973381B2 (en) 2003-09-08 2011-07-05 International Rectifier Corporation Thick field oxide termination for trench schottky device
FR2864345B1 (fr) 2003-12-18 2006-03-31 St Microelectronics Sa Realisation de la peripherie d'une diode schottky a tranchees mos
US7078780B2 (en) 2004-04-19 2006-07-18 Shye-Lin Wu Schottky barrier diode and method of making the same
JP2006080177A (ja) 2004-09-08 2006-03-23 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US7183626B2 (en) 2004-11-17 2007-02-27 International Rectifier Corporation Passivation structure with voltage equalizing loops
EP1681725A1 (fr) 2005-01-18 2006-07-19 St Microelectronics S.A. Composant unipolaire vertical à faible courant de fuite
US8110869B2 (en) 2005-02-11 2012-02-07 Alpha & Omega Semiconductor, Ltd Planar SRFET using no additional masks and layout method
US7253477B2 (en) 2005-02-15 2007-08-07 Semiconductor Components Industries, L.L.C. Semiconductor device edge termination structure
US7750398B2 (en) 2006-09-26 2010-07-06 Force-Mos Technology Corporation Trench MOSFET with trench termination and manufacture thereof
JP2007258742A (ja) * 2007-05-23 2007-10-04 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
JP5444608B2 (ja) 2007-11-07 2014-03-19 富士電機株式会社 半導体装置
US8853770B2 (en) * 2010-03-16 2014-10-07 Vishay General Semiconductor Llc Trench MOS device with improved termination structure for high voltage applications

Also Published As

Publication number Publication date
TWI565064B (zh) 2017-01-01
KR101836888B1 (ko) 2018-03-09
US8928065B2 (en) 2015-01-06
CN103180958A (zh) 2013-06-26
WO2012054686A3 (en) 2012-07-05
EP2630661A4 (en) 2014-01-22
KR20130093645A (ko) 2013-08-22
TW201238050A (en) 2012-09-16
JP2013545296A (ja) 2013-12-19
EP2630661B1 (en) 2018-01-03
US20110227152A1 (en) 2011-09-22
EP2630661A2 (en) 2013-08-28
WO2012054686A2 (en) 2012-04-26

Similar Documents

Publication Publication Date Title
JP5990525B2 (ja) 改善された終端構造を備えた高電圧用途のためのトレンチｄｍｏｓデバイス
US8853770B2 (en) Trench MOS device with improved termination structure for high voltage applications
KR101966148B1 (ko) 개선된 종단 구조를 구비한 고전압 트렌치 dmos 소자
EP2920816B1 (en) Method of manufacturing trench-based schottky diode with improved trench protection
KR101907175B1 (ko) 고전압 애플리케이션을 위한 다중 필드-완화 트렌치를 구비한 종단 구조체를 갖는 트렌치 mos 디바이스
KR101857022B1 (ko) 다중 부유게이트를 갖는 트렌치 mos 장벽 쇼트키(tmbs)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141009

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141009

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160209

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160715

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160815

R150 Certificate of patent or registration of utility model

Ref document number: 5990525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250