CN103180958A - 用于高压应用的具有改善终端结构的沟槽dmos器件 - Google Patents

用于高压应用的具有改善终端结构的沟槽dmos器件 Download PDF

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Publication number
CN103180958A
CN103180958A CN2011800509355A CN201180050935A CN103180958A CN 103180958 A CN103180958 A CN 103180958A CN 2011800509355 A CN2011800509355 A CN 2011800509355A CN 201180050935 A CN201180050935 A CN 201180050935A CN 103180958 A CN103180958 A CN 103180958A
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CN
China
Prior art keywords
termination
trench
region
schottky diode
substrate
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Pending
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CN2011800509355A
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English (en)
Chinese (zh)
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许志维
弗洛林·乌德雷亚
林意茵
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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Publication of CN103180958A publication Critical patent/CN103180958A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2011800509355A 2010-10-21 2011-10-20 用于高压应用的具有改善终端结构的沟槽dmos器件 Pending CN103180958A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/909,033 2010-10-21
US12/909,033 US8928065B2 (en) 2010-03-16 2010-10-21 Trench DMOS device with improved termination structure for high voltage applications
PCT/US2011/057020 WO2012054686A2 (en) 2010-10-21 2011-10-20 Trench dmos device with improved termination structure for high voltage applications

Publications (1)

Publication Number Publication Date
CN103180958A true CN103180958A (zh) 2013-06-26

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CN2011800509355A Pending CN103180958A (zh) 2010-10-21 2011-10-20 用于高压应用的具有改善终端结构的沟槽dmos器件

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Country Link
US (1) US8928065B2 (enExample)
EP (1) EP2630661B1 (enExample)
JP (1) JP5990525B2 (enExample)
KR (1) KR101836888B1 (enExample)
CN (1) CN103180958A (enExample)
TW (1) TWI565064B (enExample)
WO (1) WO2012054686A2 (enExample)

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CN106129126A (zh) * 2016-08-31 2016-11-16 上海格瑞宝电子有限公司 一种沟槽肖特基二极管及其制备方法
CN106816478A (zh) * 2015-12-01 2017-06-09 敦南科技股份有限公司 二极管元件及其制造方法
CN109244136A (zh) * 2018-09-19 2019-01-18 电子科技大学 槽底肖特基接触SiC MOSFET器件
CN109742135A (zh) * 2018-12-03 2019-05-10 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN110444583A (zh) * 2019-08-08 2019-11-12 南京芯长征科技有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN111092113A (zh) * 2018-10-24 2020-05-01 禾鼎科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN119451140A (zh) * 2025-01-08 2025-02-14 通威微电子有限公司 一种mps二极管及其制作方法

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US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
TWI469353B (zh) * 2012-05-04 2015-01-11 Great Power Semiconductor Corp 溝槽式功率金氧半場效電晶體與其製造方法
CN103426906B (zh) * 2012-05-21 2016-05-04 科轩微电子股份有限公司 沟槽式功率金氧半场效晶体管与其制造方法
US9105494B2 (en) * 2013-02-25 2015-08-11 Alpha and Omega Semiconductors, Incorporated Termination trench for power MOSFET applications
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
US9178015B2 (en) 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
TWI546970B (zh) * 2014-05-13 2016-08-21 帥群微電子股份有限公司 半導體元件的終端結構及其製造方法
US20160020279A1 (en) * 2014-07-18 2016-01-21 International Rectifier Corporation Edge Termination Using Guard Rings Between Recessed Field Oxide Regions
US20180012974A1 (en) * 2014-11-18 2018-01-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN105720109A (zh) * 2014-12-05 2016-06-29 无锡华润上华半导体有限公司 一种沟槽型肖特基势垒二极管及其制备方法
TWI566410B (zh) * 2014-12-12 2017-01-11 漢磊科技股份有限公司 半導體元件、終端結構及其製造方法
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
US9716187B2 (en) * 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
TWI601291B (zh) * 2015-10-07 2017-10-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
TWI563570B (en) * 2015-11-23 2016-12-21 Pfc Device Holdings Ltd Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)
JP2017139289A (ja) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 ダイオード
US9525045B1 (en) 2016-03-10 2016-12-20 Vanguard International Semiconductor Corporation Semiconductor devices and methods for forming the same
US9859448B2 (en) * 2016-05-06 2018-01-02 The Aerospace Corporation Single-event burnout (SEB) hardened power schottky diodes, and methods of making and using the same
CN110313071B (zh) * 2017-02-10 2022-03-01 三菱电机株式会社 半导体装置
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
TWI681458B (zh) * 2018-10-24 2020-01-01 禾鼎科技股份有限公司 金氧半場效應電晶體之終端區結構及其製造方法
CN110690115B (zh) * 2019-10-15 2022-12-13 扬州虹扬科技发展有限公司 一种沟槽式肖特基二极管终端防护结构的制备方法
CN115188802A (zh) * 2022-09-08 2022-10-14 深圳芯能半导体技术有限公司 浮动环的结构、制造方法及电子设备
CN117936573B (zh) * 2024-01-25 2025-01-14 赛晶亚太半导体科技(浙江)有限公司 一种igbt半导体结构及其制造方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816478A (zh) * 2015-12-01 2017-06-09 敦南科技股份有限公司 二极管元件及其制造方法
CN106816478B (zh) * 2015-12-01 2019-09-13 敦南科技股份有限公司 二极管元件及其制造方法
CN106129126A (zh) * 2016-08-31 2016-11-16 上海格瑞宝电子有限公司 一种沟槽肖特基二极管及其制备方法
CN109244136A (zh) * 2018-09-19 2019-01-18 电子科技大学 槽底肖特基接触SiC MOSFET器件
CN111092113A (zh) * 2018-10-24 2020-05-01 禾鼎科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
CN111092113B (zh) * 2018-10-24 2023-06-02 力士科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
CN109742135A (zh) * 2018-12-03 2019-05-10 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN109742135B (zh) * 2018-12-03 2022-05-20 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN110444583B (zh) * 2019-08-08 2023-04-11 江苏芯长征微电子集团股份有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN110444583A (zh) * 2019-08-08 2019-11-12 南京芯长征科技有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN119451140A (zh) * 2025-01-08 2025-02-14 通威微电子有限公司 一种mps二极管及其制作方法
CN119451140B (zh) * 2025-01-08 2025-03-14 通威微电子有限公司 一种mps二极管及其制作方法

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Publication number Publication date
TWI565064B (zh) 2017-01-01
WO2012054686A2 (en) 2012-04-26
KR20130093645A (ko) 2013-08-22
EP2630661B1 (en) 2018-01-03
WO2012054686A3 (en) 2012-07-05
TW201238050A (en) 2012-09-16
JP5990525B2 (ja) 2016-09-14
US8928065B2 (en) 2015-01-06
EP2630661A4 (en) 2014-01-22
US20110227152A1 (en) 2011-09-22
JP2013545296A (ja) 2013-12-19
KR101836888B1 (ko) 2018-03-09
EP2630661A2 (en) 2013-08-28

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Application publication date: 20130626