TWI565064B - 用於高壓應用的具有改良終止結構之溝渠ｄｍｏｓ裝置 - Google Patents

用於高壓應用的具有改良終止結構之溝渠ｄｍｏｓ裝置 Download PDF

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Publication number
TWI565064B
TWI565064B TW100137737A TW100137737A TWI565064B TW I565064 B TWI565064 B TW I565064B TW 100137737 A TW100137737 A TW 100137737A TW 100137737 A TW100137737 A TW 100137737A TW I565064 B TWI565064 B TW I565064B
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TW
Taiwan
Prior art keywords
termination
trench
substrate
termination structure
layer
Prior art date
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TW100137737A
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English (en)
Chinese (zh)
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TW201238050A (en
Inventor
許志維
佛洛林 優卓亞
林意茵
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微協通用半導體有限責任公司
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Publication of TW201238050A publication Critical patent/TW201238050A/zh
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Publication of TWI565064B publication Critical patent/TWI565064B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW100137737A 2010-10-21 2011-10-18 用於高壓應用的具有改良終止結構之溝渠ｄｍｏｓ裝置 TWI565064B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/909,033 US8928065B2 (en) 2010-03-16 2010-10-21 Trench DMOS device with improved termination structure for high voltage applications

Publications (2)

Publication Number Publication Date
TW201238050A TW201238050A (en) 2012-09-16
TWI565064B true TWI565064B (zh) 2017-01-01

Family

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Family Applications (1)

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TW100137737A TWI565064B (zh) 2010-10-21 2011-10-18 用於高壓應用的具有改良終止結構之溝渠ｄｍｏｓ裝置

Country Status (7)

Country Link
US (1) US8928065B2 (enExample)
EP (1) EP2630661B1 (enExample)
JP (1) JP5990525B2 (enExample)
KR (1) KR101836888B1 (enExample)
CN (1) CN103180958A (enExample)
TW (1) TWI565064B (enExample)
WO (1) WO2012054686A2 (enExample)

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US9105494B2 (en) * 2013-02-25 2015-08-11 Alpha and Omega Semiconductors, Incorporated Termination trench for power MOSFET applications
US9496382B2 (en) * 2013-11-21 2016-11-15 Chengdu Monolithic Power Systems Co., Ltd. Field effect transistor, termination structure and associated method for manufacturing
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
TWI546970B (zh) * 2014-05-13 2016-08-21 帥群微電子股份有限公司 半導體元件的終端結構及其製造方法
US9899477B2 (en) * 2014-07-18 2018-02-20 Infineon Technologies Americas Corp. Edge termination structure having a termination charge region below a recessed field oxide region
WO2016080322A1 (ja) * 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
CN105720109A (zh) * 2014-12-05 2016-06-29 无锡华润上华半导体有限公司 一种沟槽型肖特基势垒二极管及其制备方法
TWI566410B (zh) * 2014-12-12 2017-01-11 漢磊科技股份有限公司 半導體元件、終端結構及其製造方法
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US9716187B2 (en) * 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
TWI601291B (zh) * 2015-10-07 2017-10-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
TWI563570B (en) * 2015-11-23 2016-12-21 Pfc Device Holdings Ltd Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)
CN106816478B (zh) * 2015-12-01 2019-09-13 敦南科技股份有限公司 二极管元件及其制造方法
JP2017139289A (ja) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 ダイオード
US9525045B1 (en) 2016-03-10 2016-12-20 Vanguard International Semiconductor Corporation Semiconductor devices and methods for forming the same
US9859448B2 (en) * 2016-05-06 2018-01-02 The Aerospace Corporation Single-event burnout (SEB) hardened power schottky diodes, and methods of making and using the same
CN106129126A (zh) * 2016-08-31 2016-11-16 上海格瑞宝电子有限公司 一种沟槽肖特基二极管及其制备方法
WO2018146791A1 (ja) * 2017-02-10 2018-08-16 三菱電機株式会社 半導体装置
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN109244136B (zh) * 2018-09-19 2021-07-27 电子科技大学 槽底肖特基接触SiC MOSFET器件
CN111092113B (zh) * 2018-10-24 2023-06-02 力士科技股份有限公司 金氧半场效应晶体管的终端区结构及其制造方法
TWI681458B (zh) * 2018-10-24 2020-01-01 禾鼎科技股份有限公司 金氧半場效應電晶體之終端區結構及其製造方法
CN109742135B (zh) * 2018-12-03 2022-05-20 北京大学深圳研究生院 一种碳化硅mosfet器件及其制备方法
CN110444583B (zh) * 2019-08-08 2023-04-11 江苏芯长征微电子集团股份有限公司 低成本高可靠性的功率半导体器件及其制备方法
CN110690115B (zh) * 2019-10-15 2022-12-13 扬州虹扬科技发展有限公司 一种沟槽式肖特基二极管终端防护结构的制备方法
CN113690234A (zh) * 2021-08-25 2021-11-23 威星国际半导体(深圳)有限公司 电力电子半导体器件
CN115188802A (zh) * 2022-09-08 2022-10-14 深圳芯能半导体技术有限公司 浮动环的结构、制造方法及电子设备
CN117936573B (zh) * 2024-01-25 2025-01-14 赛晶亚太半导体科技(浙江)有限公司 一种igbt半导体结构及其制造方法
CN119451140B (zh) * 2025-01-08 2025-03-14 通威微电子有限公司 一种mps二极管及其制作方法

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Also Published As

Publication number Publication date
US20110227152A1 (en) 2011-09-22
JP2013545296A (ja) 2013-12-19
EP2630661A4 (en) 2014-01-22
TW201238050A (en) 2012-09-16
EP2630661A2 (en) 2013-08-28
KR20130093645A (ko) 2013-08-22
EP2630661B1 (en) 2018-01-03
KR101836888B1 (ko) 2018-03-09
CN103180958A (zh) 2013-06-26
WO2012054686A2 (en) 2012-04-26
WO2012054686A3 (en) 2012-07-05
US8928065B2 (en) 2015-01-06
JP5990525B2 (ja) 2016-09-14

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