JP2006080177A - 半導体装置およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】本発明は、トレンチ、ゲート酸化膜およびゲート電極形成後、加速電圧の異なる高加速イオン注入により、チャネル層を形成する。チャネル層は熱処理による拡散を行わない不純物注入層であり、高加速イオン注入機で複数回のイオン注入を行うことによりトレンチ深さ方向の不純物濃度をほぼ均一にできる。特性にほとんど影響しない第2領域を低減できるので、必要最小限の深さのチャネル層が得られる。これによりトレンチを浅くして低容量化が図れ、またエピタキシャル層を薄くすることにより低オン抵抗化が実現できる。
【選択図】 図5
Description
2 n−型エピタキシャル層(ドレイン領域)
4 チャネル層
4a 第1領域
4b 第2領域
7 トレンチ
11 ゲート酸化膜
13 ゲート電極
14 ボディ領域
15 ソース領域
16 層間絶縁膜
18 金属配線層
21 n+半導体基板
22 n−型エピタキシャル層(ドレイン領域)
24 チャネル層
24a 第1領域
24b 第2領域
27 トレンチ
31 ゲート酸化膜
33 ゲート電極
34 ボディ領域
35 ソース領域
36 層間絶縁膜
38 金属配線層
Claims (7)
- 一導電型半導体基板上に一導電型半導体層を積層したドレイン領域と、
前記半導体層表面からほぼ均一な深さに設けられた逆導電型のチャネル層と、
前記ドレイン領域に設けられたトレンチと、
少なくとも前記トレンチ内壁に設けた絶縁膜と、
前記トレンチ内に埋設されたゲート電極と、
前記トレンチに隣接する前記半導体層表面に設けられた一導電型のソース領域とを具備し、
前記チャネル層は前記ソース領域との境界から不純物濃度プロファイルの平均投影飛程までの深さの第1領域と、該第1領域下方で不純物濃度勾配の大きい第2領域とを有し、該第2領域の深さが0.5μm以下であることを特徴とする半導体装置。 - 前記チャネル層は不純物のイオン注入層であることを特徴とする請求項1に記載の半導体装置。
- 前記第1領域の不純物濃度は前記トレンチの深さ方向にほぼ均一であることを特徴とする請求項1に記載の半導体装置。
- 一導電型半導体基板上に一導電型半導体層を積層したドレイン領域にトレンチを形成する工程と、
少なくとも前記トレンチ内壁に絶縁膜を形成する工程と、
前記トレンチ内にゲート電極を形成する工程と、
前記ゲート電極を形成した後、前記基板表面に逆導電型不純物のイオン注入を複数回行い前記半導体層表面からほぼ均一な深さのチャネル層を形成する工程と、
前記トレンチに隣接する前記半導体層表面に一導電型不純物のイオン注入および拡散を行いソース領域を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記複数回のイオン注入は異なる注入エネルギーで行うことを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記注入エネルギーはいずれも100KeV以上であることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記逆導電型不純物のイオン注入に引き続き前記一導電型不純物のイオン注入を行うことを特徴とする請求項4に記載の半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004260533A JP2006080177A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
TW094122804A TWI270150B (en) | 2004-09-08 | 2005-07-06 | Semiconductor device and manufacturing method of the same |
KR1020050081209A KR100662692B1 (ko) | 2004-09-08 | 2005-09-01 | 반도체 장치 및 그 제조 방법 |
US11/220,406 US20060054970A1 (en) | 2004-09-08 | 2005-09-07 | Semiconductor device and method of manufacturing the same |
CNA200510098147XA CN1773724A (zh) | 2004-09-08 | 2005-09-08 | 半导体装置及其制造方法 |
US11/709,147 US20070166905A1 (en) | 2004-09-08 | 2007-02-22 | Method of manufacturing semiconductor device with trench |
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JP2004260533A JP2006080177A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
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JP2006080177A true JP2006080177A (ja) | 2006-03-23 |
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JP2004260533A Pending JP2006080177A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
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Country | Link |
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US (2) | US20060054970A1 (ja) |
JP (1) | JP2006080177A (ja) |
KR (1) | KR100662692B1 (ja) |
CN (1) | CN1773724A (ja) |
TW (1) | TWI270150B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008085134A (ja) * | 2006-09-28 | 2008-04-10 | Nec Electronics Corp | 半導体装置及びその製造方法 |
WO2009142233A1 (ja) * | 2008-05-20 | 2009-11-26 | ローム株式会社 | 半導体装置 |
US7871888B2 (en) | 2007-10-24 | 2011-01-18 | Fuji Electric Systems Co., Ltd. | Method of manufacturing semiconductor device |
JP2012069933A (ja) * | 2010-08-26 | 2012-04-05 | Shindengen Electric Mfg Co Ltd | トレンチゲート型パワー半導体装置及びその製造方法 |
JP2012248760A (ja) * | 2011-05-30 | 2012-12-13 | Shindengen Electric Mfg Co Ltd | トレンチゲートパワー半導体装置及びその製造方法 |
US8723295B2 (en) | 2011-06-06 | 2014-05-13 | Renesas Electronics Corporation | Semiconductor device, manufacturing method thereof, electronic device and vehicle |
US10916624B2 (en) | 2018-05-17 | 2021-02-09 | Fuji Electric Co., Ltd. | Semiconductor integrated circuit and method of manufacturing the same |
US11145552B2 (en) | 2019-02-15 | 2021-10-12 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor integrated circuit |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US8110869B2 (en) * | 2005-02-11 | 2012-02-07 | Alpha & Omega Semiconductor, Ltd | Planar SRFET using no additional masks and layout method |
US8836015B2 (en) * | 2005-02-11 | 2014-09-16 | Alpha And Omega Semiconductor Incorporated | Planar SRFET using no additional masks and layout method |
JP4294050B2 (ja) * | 2006-12-27 | 2009-07-08 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
KR100811275B1 (ko) * | 2006-12-28 | 2008-03-07 | 주식회사 하이닉스반도체 | 벌브 타입의 리세스 채널을 갖는 반도체소자의 제조방법 |
JP2009016480A (ja) * | 2007-07-03 | 2009-01-22 | Toshiba Corp | 半導体装置、及び半導体装置の製造方法 |
KR100940642B1 (ko) * | 2007-12-28 | 2010-02-05 | 주식회사 동부하이텍 | 반도체 소자의 제조방법 |
US8928065B2 (en) * | 2010-03-16 | 2015-01-06 | Vishay General Semiconductor Llc | Trench DMOS device with improved termination structure for high voltage applications |
US8853770B2 (en) * | 2010-03-16 | 2014-10-07 | Vishay General Semiconductor Llc | Trench MOS device with improved termination structure for high voltage applications |
JP2012164765A (ja) * | 2011-02-04 | 2012-08-30 | Rohm Co Ltd | 半導体装置 |
JP2012204636A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2013069964A (ja) * | 2011-09-26 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
CN106298775B (zh) * | 2015-05-20 | 2019-12-24 | 北大方正集团有限公司 | 一种混合整流二极管及其制作方法 |
JP6472776B2 (ja) * | 2016-02-01 | 2019-02-20 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
DE102016226237A1 (de) | 2016-02-01 | 2017-08-03 | Fuji Electric Co., Ltd. | Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung |
JP6907233B2 (ja) * | 2016-02-02 | 2021-07-21 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | パワー半導体デバイス |
JP2018041789A (ja) * | 2016-09-06 | 2018-03-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN107978629A (zh) * | 2017-11-30 | 2018-05-01 | 上海华虹宏力半导体制造有限公司 | P型沟槽栅mosfet及其制造方法 |
JP7196000B2 (ja) * | 2019-04-02 | 2022-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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2004
- 2004-09-08 JP JP2004260533A patent/JP2006080177A/ja active Pending
-
2005
- 2005-07-06 TW TW094122804A patent/TWI270150B/zh not_active IP Right Cessation
- 2005-09-01 KR KR1020050081209A patent/KR100662692B1/ko not_active IP Right Cessation
- 2005-09-07 US US11/220,406 patent/US20060054970A1/en not_active Abandoned
- 2005-09-08 CN CNA200510098147XA patent/CN1773724A/zh active Pending
-
2007
- 2007-02-22 US US11/709,147 patent/US20070166905A1/en not_active Abandoned
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JP2001203353A (ja) * | 2000-01-19 | 2001-07-27 | Nec Corp | 半導体装置の製造方法 |
JP2001339063A (ja) * | 2000-05-30 | 2001-12-07 | Denso Corp | 半導体装置およびその製造方法 |
JP2004221201A (ja) * | 2003-01-10 | 2004-08-05 | Sharp Corp | 半導体装置の製造方法および半導体装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008085134A (ja) * | 2006-09-28 | 2008-04-10 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US7871888B2 (en) | 2007-10-24 | 2011-01-18 | Fuji Electric Systems Co., Ltd. | Method of manufacturing semiconductor device |
JP5819064B2 (ja) * | 2008-05-20 | 2015-11-18 | ローム株式会社 | 半導体装置 |
WO2009142233A1 (ja) * | 2008-05-20 | 2009-11-26 | ローム株式会社 | 半導体装置 |
US8575622B2 (en) | 2008-05-20 | 2013-11-05 | Rohm Co., Ltd. | Silicon carbide trench MOSFET having reduced on-resistance, increased dielectric withstand voltage, and reduced threshold voltage |
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JP2014241435A (ja) * | 2008-05-20 | 2014-12-25 | ローム株式会社 | 半導体装置 |
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TW200610065A (en) | 2006-03-16 |
US20060054970A1 (en) | 2006-03-16 |
KR20060050926A (ko) | 2006-05-19 |
KR100662692B1 (ko) | 2007-01-02 |
CN1773724A (zh) | 2006-05-17 |
US20070166905A1 (en) | 2007-07-19 |
TWI270150B (en) | 2007-01-01 |
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