JP4793840B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4793840B2 JP4793840B2 JP2004223228A JP2004223228A JP4793840B2 JP 4793840 B2 JP4793840 B2 JP 4793840B2 JP 2004223228 A JP2004223228 A JP 2004223228A JP 2004223228 A JP2004223228 A JP 2004223228A JP 4793840 B2 JP4793840 B2 JP 4793840B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- forming
- type impurity
- type
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000010410 layer Substances 0.000 claims description 129
- 239000012535 impurity Substances 0.000 claims description 86
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 75
- 229910052796 boron Inorganic materials 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 47
- 238000002513 implantation Methods 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 108091006146 Channels Proteins 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 17
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 2
- 229910015900 BF3 Inorganic materials 0.000 description 19
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 19
- 239000003870 refractory metal Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 11
- 229910000838 Al alloy Inorganic materials 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910010282 TiON Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
前記素子領域形成後、前記p型不純物拡散領域およびn型不純物拡散領域の両表面を露出させ、露出した該表面に前記n型不純物拡散領域と前記金属層とのコンタクト抵抗に影響を与えない濃度のp型不純物を注入し、前記金属層を形成することにより解決するものである。
2 ドレイン領域
4 チャネル層
7 トレンチ
11 ゲート酸化膜
13 ゲート電極
14 ボディコンタクト領域
15 ソース領域
16 層間絶縁膜
17 高融点金属層
18 金属配線層
20 素子領域
21 シリコン半導体基板
22 ドレイン領域
24 チャネル層
27 トレンチ
31 ゲート酸化膜
33 ゲート電極
34 ボディコンタクト領域
35 ソース領域
36 層間絶縁膜
37 高融点金属層
38 金属配線層
100 測定電極
101 基板
102 絶縁膜
150 TEG
Claims (9)
- シリコン半導体基板表面にp型不純物拡散領域およびn型不純物拡散領域から成る素子領域を形成し、前記素子領域表面に少なくともチタンを含む金属層を形成する工程を含む半導体装置の製造方法において、
前記素子領域形成後、前記p型不純物拡散領域およびn型不純物拡散領域の両表面を露出させ、露出した該表面に前記n型不純物拡散領域と前記金属層とのコンタクト抵抗に影響を与えない濃度のp型不純物を注入し、前記金属層を形成することを特徴とする半導体装置の製造方法。 - シリコン半導体基板表面に少なくともチタンを含む金属層を形成する工程を含む半導体装置の製造方法において、
前記シリコン半導体基板上にp型のドレイン領域を形成し、該ドレイン領域表面にn型のチャネル層を形成し、該チャネル層と絶縁膜を介して接するゲート電極を形成する工程と、
前記チャネル層表面にp型のソース領域およびn型のボディコンタクト領域を形成して素子領域を形成し、該素子領域上に前記ソース領域および前記ボディコンタクト領域が露出する接続孔を有する層間絶縁膜を形成する工程と、
前記接続孔を介して前記ソース領域および前記ボディコンタクト領域表面に該ボディコンタクト領域と前記金属層とのコンタクト抵抗に影響を与えない濃度のp型不純物を注入する工程と、
前記ソース領域およびボディコンタクト領域表面にコンタクトする前記金属層を形成する工程と、
前記金属層上に、金属配線層を形成する工程とを具備することを特徴とする半導体装置の製造方法。 - シリコン半導体基板表面に少なくともチタンを含む金属層を形成する工程を含む半導体装置の製造方法において、
前記シリコン半導体基板上にn型のドレイン領域を形成し、該ドレイン領域表面にp型のチャネル層を形成し、該チャネル層と絶縁膜を介して接するゲート電極を形成する工程と、
前記チャネル層表面にn型のソース領域およびp型のボディコンタクト領域を形成して素子領域を形成し、該素子領域上に前記ソース領域および前記ボディコンタクト領域が露出する接続孔を有する層間絶縁膜を形成する工程と、
前記接続孔を介して前記ソース領域および前記ボディコンタクト領域表面に該ソース領域と前記金属層とのコンタクト抵抗に影響を与えない濃度のp型不純物を注入する工程と、
前記ボディコンタクト領域およびソース領域表面にコンタクトする前記金属層を形成する工程と、
前記金属層上に、金属配線層を形成する工程とを具備することを特徴とする半導体装置の製造方法。 - 前記p型不純物はボロンであることを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
- 前記p型不純物は、前記素子領域上にマスクを設けずに注入することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
- 前記シリコン半導体基板と前記金属層により形成されるチタンシリサイド層による吸収量と同等以上のドーズ量で前記p型不純物を注入することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
- 前記p型不純物は、4×10 14 cm −2 以上で1×10 15 cm −2 より少ないドーズ量で注入することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
- 前記p型不純物は、4×10 14 cm −2 〜8×10 14 cm −2 程度のドーズ量で注入することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
- 前記p型不純物は、前記基板表面から1000Å程度以下の浅い領域に当該不純物の濃度プロファイルのピークが位置するようにイオン注入されることを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004223228A JP4793840B2 (ja) | 2003-11-10 | 2004-07-30 | 半導体装置の製造方法 |
TW093125083A TWI236147B (en) | 2003-11-10 | 2004-08-20 | Method of manufacturing semiconductor device |
KR1020040073669A KR100674549B1 (ko) | 2003-11-10 | 2004-09-15 | 반도체 장치의 제조 방법 |
CNA2004100120071A CN1617352A (zh) | 2003-11-10 | 2004-09-28 | 半导体装置的制造方法 |
US10/952,381 US7320916B2 (en) | 2003-11-10 | 2004-09-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003380308 | 2003-11-10 | ||
JP2003380308 | 2003-11-10 | ||
JP2004223228A JP4793840B2 (ja) | 2003-11-10 | 2004-07-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005167192A JP2005167192A (ja) | 2005-06-23 |
JP4793840B2 true JP4793840B2 (ja) | 2011-10-12 |
Family
ID=34575947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004223228A Expired - Fee Related JP4793840B2 (ja) | 2003-11-10 | 2004-07-30 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7320916B2 (ja) |
JP (1) | JP4793840B2 (ja) |
KR (1) | KR100674549B1 (ja) |
CN (1) | CN1617352A (ja) |
TW (1) | TWI236147B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1812127A (zh) * | 2004-12-14 | 2006-08-02 | 松下电器产业株式会社 | 纵型栅极半导体装置及其制造方法 |
JP2012164765A (ja) | 2011-02-04 | 2012-08-30 | Rohm Co Ltd | 半導体装置 |
JP6772495B2 (ja) * | 2016-03-16 | 2020-10-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
JPS60138916A (ja) | 1983-12-27 | 1985-07-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2643930B2 (ja) * | 1986-07-17 | 1997-08-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
GB2199694A (en) * | 1986-12-23 | 1988-07-13 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
JPH0684824A (ja) * | 1992-08-31 | 1994-03-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP3259357B2 (ja) * | 1992-10-05 | 2002-02-25 | セイコーエプソン株式会社 | 半導体装置 |
JPH08139315A (ja) * | 1994-11-09 | 1996-05-31 | Mitsubishi Electric Corp | Mosトランジスタ、半導体装置及びそれらの製造方法 |
JP3239202B2 (ja) * | 1995-12-01 | 2001-12-17 | シャープ株式会社 | Mosトランジスタ及びその製造方法 |
JP3326088B2 (ja) * | 1996-03-14 | 2002-09-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4906184B2 (ja) * | 2000-11-17 | 2012-03-28 | オンセミコンダクター・トレーディング・リミテッド | 絶縁ゲート型半導体装置の製造方法 |
JP3953280B2 (ja) * | 2001-02-09 | 2007-08-08 | 三洋電機株式会社 | 絶縁ゲート型半導体装置の製造方法 |
JP2003008017A (ja) * | 2001-06-18 | 2003-01-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP3913530B2 (ja) | 2001-11-09 | 2007-05-09 | 三洋電機株式会社 | 半導体装置の製造方法 |
-
2004
- 2004-07-30 JP JP2004223228A patent/JP4793840B2/ja not_active Expired - Fee Related
- 2004-08-20 TW TW093125083A patent/TWI236147B/zh not_active IP Right Cessation
- 2004-09-15 KR KR1020040073669A patent/KR100674549B1/ko not_active IP Right Cessation
- 2004-09-28 CN CNA2004100120071A patent/CN1617352A/zh active Pending
- 2004-09-29 US US10/952,381 patent/US7320916B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1617352A (zh) | 2005-05-18 |
KR20050045001A (ko) | 2005-05-16 |
JP2005167192A (ja) | 2005-06-23 |
TW200516771A (en) | 2005-05-16 |
US20050106843A1 (en) | 2005-05-19 |
TWI236147B (en) | 2005-07-11 |
US7320916B2 (en) | 2008-01-22 |
KR100674549B1 (ko) | 2007-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100662692B1 (ko) | 반도체 장치 및 그 제조 방법 | |
US7439137B2 (en) | Method for manufacturing semiconductor device | |
US6599819B1 (en) | Semiconductor device with source/drain regions of high impurity concentration and its manufacture | |
JP2000269492A (ja) | 半導体装置の製造方法 | |
JP2006228906A (ja) | 半導体装置およびその製造方法 | |
JP2008078397A (ja) | 絶縁ゲート型半導体装置の製造方法 | |
US7413954B2 (en) | Insulated gate semiconductor device and manufacturing method of the same | |
JP4377721B2 (ja) | 半導体装置の製造方法 | |
JP2007294759A (ja) | 半導体装置およびその製造方法 | |
US7015107B2 (en) | Method of manufacturing semiconductor device | |
JP2007200976A (ja) | 半導体装置の製造方法 | |
US6281085B1 (en) | Method of manufacturing a semiconductor device | |
JP4793840B2 (ja) | 半導体装置の製造方法 | |
JP4559938B2 (ja) | 半導体装置の製造方法 | |
JPH08330255A (ja) | 半導体装置の製造方法 | |
US7723784B2 (en) | Insulated gate semiconductor device and method for manufacturing the same | |
JP4186318B2 (ja) | 半導体装置の製造方法 | |
JP2005093907A (ja) | 半導体装置およびその製造方法 | |
US6974996B2 (en) | Semiconductor device and method of manufacturing the same | |
JP2005197547A (ja) | 半導体装置の製造方法 | |
JPH0425076A (ja) | 薄膜トランジスタ | |
JP3913530B2 (ja) | 半導体装置の製造方法 | |
JP2005175143A (ja) | 半導体装置およびその製造方法 | |
JP3482201B2 (ja) | 半導体装置及びその製造方法 | |
JP2006332231A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070629 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20101224 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110509 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110531 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110630 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110720 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110721 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |