CN103545346A - 隔离型n型ldmos器件及其制造方法 - Google Patents
隔离型n型ldmos器件及其制造方法 Download PDFInfo
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- CN103545346A CN103545346A CN201210236375.9A CN201210236375A CN103545346A CN 103545346 A CN103545346 A CN 103545346A CN 201210236375 A CN201210236375 A CN 201210236375A CN 103545346 A CN103545346 A CN 103545346A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 106
- 239000010703 silicon Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000003647 oxidation Effects 0.000 claims description 42
- 238000007254 oxidation reaction Methods 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 238000000407 epitaxy Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000004220 aggregation Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 76
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 9
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210236375.9A CN103545346B (zh) | 2012-07-09 | 2012-07-09 | 隔离型n型ldmos器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210236375.9A CN103545346B (zh) | 2012-07-09 | 2012-07-09 | 隔离型n型ldmos器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103545346A true CN103545346A (zh) | 2014-01-29 |
CN103545346B CN103545346B (zh) | 2016-11-16 |
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ID=49968630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210236375.9A Active CN103545346B (zh) | 2012-07-09 | 2012-07-09 | 隔离型n型ldmos器件及其制造方法 |
Country Status (1)
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CN (1) | CN103545346B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157692A (zh) * | 2014-08-18 | 2014-11-19 | 电子科技大学 | 克服短沟道效应提升频率的局部soi ldmos器件 |
CN105206666A (zh) * | 2014-05-28 | 2015-12-30 | 北大方正集团有限公司 | 半导体器件 |
CN106033775A (zh) * | 2014-09-01 | 2016-10-19 | 爱思开海力士有限公司 | 功率集成器件、包括其的电子器件及电子系统 |
CN110515017A (zh) * | 2019-10-24 | 2019-11-29 | 南京邮电大学 | 一种超高灵敏度磁场传感器 |
CN113013228A (zh) * | 2021-02-24 | 2021-06-22 | 上海华力集成电路制造有限公司 | 一种提升ldmos性能的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686755A (en) * | 1993-01-04 | 1997-11-11 | Texas Instruments Incorporated | LDMOS resurf high voltage transistor |
US20010038125A1 (en) * | 2000-04-26 | 2001-11-08 | Hitachi, Ltd | Insulated gate field effect transistor and semiconductor integrated circuit |
US6429488B2 (en) * | 1998-11-17 | 2002-08-06 | International Business Machines Corporation | Densely patterned silicon-on-insulator (SOI) region on a wafer |
CN1845332A (zh) * | 2006-03-21 | 2006-10-11 | 电子科技大学 | 具有低k介质埋层的SOI结构及其功率器件 |
JP2009060064A (ja) * | 2007-09-04 | 2009-03-19 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
CN102082169A (zh) * | 2010-12-08 | 2011-06-01 | 四川长虹电器股份有限公司 | 部分soi横向双扩散器件 |
-
2012
- 2012-07-09 CN CN201210236375.9A patent/CN103545346B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686755A (en) * | 1993-01-04 | 1997-11-11 | Texas Instruments Incorporated | LDMOS resurf high voltage transistor |
US6429488B2 (en) * | 1998-11-17 | 2002-08-06 | International Business Machines Corporation | Densely patterned silicon-on-insulator (SOI) region on a wafer |
US20010038125A1 (en) * | 2000-04-26 | 2001-11-08 | Hitachi, Ltd | Insulated gate field effect transistor and semiconductor integrated circuit |
CN1845332A (zh) * | 2006-03-21 | 2006-10-11 | 电子科技大学 | 具有低k介质埋层的SOI结构及其功率器件 |
JP2009060064A (ja) * | 2007-09-04 | 2009-03-19 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
CN102082169A (zh) * | 2010-12-08 | 2011-06-01 | 四川长虹电器股份有限公司 | 部分soi横向双扩散器件 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105206666A (zh) * | 2014-05-28 | 2015-12-30 | 北大方正集团有限公司 | 半导体器件 |
CN105206666B (zh) * | 2014-05-28 | 2018-09-25 | 北大方正集团有限公司 | 半导体器件 |
CN104157692A (zh) * | 2014-08-18 | 2014-11-19 | 电子科技大学 | 克服短沟道效应提升频率的局部soi ldmos器件 |
CN106033775A (zh) * | 2014-09-01 | 2016-10-19 | 爱思开海力士有限公司 | 功率集成器件、包括其的电子器件及电子系统 |
CN106033775B (zh) * | 2014-09-01 | 2020-09-11 | 爱思开海力士系统集成电路有限公司 | 功率集成器件、包括其的电子器件及电子系统 |
CN110515017A (zh) * | 2019-10-24 | 2019-11-29 | 南京邮电大学 | 一种超高灵敏度磁场传感器 |
CN110515017B (zh) * | 2019-10-24 | 2020-01-14 | 南京邮电大学 | 一种超高灵敏度磁场传感器 |
CN113013228A (zh) * | 2021-02-24 | 2021-06-22 | 上海华力集成电路制造有限公司 | 一种提升ldmos性能的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103545346B (zh) | 2016-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |