JP2013544022A5 - - Google Patents

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Publication number
JP2013544022A5
JP2013544022A5 JP2013534902A JP2013534902A JP2013544022A5 JP 2013544022 A5 JP2013544022 A5 JP 2013544022A5 JP 2013534902 A JP2013534902 A JP 2013534902A JP 2013534902 A JP2013534902 A JP 2013534902A JP 2013544022 A5 JP2013544022 A5 JP 2013544022A5
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JP
Japan
Prior art keywords
layer
contact
type
substrate structure
multilayer
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JP2013534902A
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English (en)
Japanese (ja)
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JP6025213B2 (ja
JP2013544022A (ja
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Priority claimed from US12/908,514 external-priority patent/US8513703B2/en
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Publication of JP2013544022A publication Critical patent/JP2013544022A/ja
Publication of JP2013544022A5 publication Critical patent/JP2013544022A5/ja
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JP2013534902A 2010-10-20 2011-07-31 フローティングおよびグランドされた基板領域を備えるｈｅｍｔ Active JP6025213B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/908,514 2010-10-20
US12/908,514 US8513703B2 (en) 2010-10-20 2010-10-20 Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
PCT/US2011/046066 WO2012054123A1 (en) 2010-10-20 2011-07-31 Hemt with floating and grounded substrate regions

Publications (3)

Publication Number Publication Date
JP2013544022A JP2013544022A (ja) 2013-12-09
JP2013544022A5 true JP2013544022A5 (enExample) 2014-08-14
JP6025213B2 JP6025213B2 (ja) 2016-11-16

Family

ID=45972254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013534902A Active JP6025213B2 (ja) 2010-10-20 2011-07-31 フローティングおよびグランドされた基板領域を備えるｈｅｍｔ

Country Status (5)

Country Link
US (1) US8513703B2 (enExample)
JP (1) JP6025213B2 (enExample)
CN (1) CN103180957B (enExample)
TW (1) TWI518898B (enExample)
WO (1) WO2012054123A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026321A (ja) * 2011-07-19 2013-02-04 Sharp Corp 窒化物系半導体層を含むエピタキシャルウエハ
US9583574B2 (en) 2012-09-28 2017-02-28 Intel Corporation Epitaxial buffer layers for group III-N transistors on silicon substrates
US9142407B2 (en) 2013-01-16 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having sets of III-V compound layers and method of forming the same
CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法
JP2014236093A (ja) 2013-05-31 2014-12-15 サンケン電気株式会社 シリコン系基板、半導体装置、及び、半導体装置の製造方法
CN103531615A (zh) * 2013-10-15 2014-01-22 苏州晶湛半导体有限公司 氮化物功率晶体管及其制造方法
JP6553336B2 (ja) * 2014-07-28 2019-07-31 エア・ウォーター株式会社 半導体装置
CN105140281A (zh) * 2015-05-27 2015-12-09 苏州能讯高能半导体有限公司 一种半导体器件及其制造方法
CN105552047B (zh) * 2015-12-14 2018-02-27 中国电子科技集团公司第五十五研究所 一种AlGaN/GaN HEMT晶体管制造方法
JP2018041933A (ja) * 2016-09-09 2018-03-15 株式会社東芝 半導体装置及び半導体基板
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
FR3102006A1 (fr) * 2019-10-15 2021-04-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composant électronique
CN112201693A (zh) * 2020-09-30 2021-01-08 锐石创芯（深圳）科技有限公司 一种氮化镓半导体器件和制造方法
CN114883390A (zh) * 2022-04-02 2022-08-09 西安电子科技大学 一种低缓冲层漏电电流的hemt外延结构及hemt器件
US20230420553A1 (en) * 2022-06-27 2023-12-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure and method of manufacture

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3029366A (en) 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
JPS501990B1 (enExample) * 1970-06-02 1975-01-22
US3859127A (en) 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
JPH07273307A (ja) * 1994-03-31 1995-10-20 Hitachi Ltd 高耐圧半導体装置
JPH08227872A (ja) * 1995-02-20 1996-09-03 Takaoka Electric Mfg Co Ltd ベベルエッチング方法
US6020603A (en) * 1996-09-24 2000-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a beveled and chamfered outer peripheral portion
US6120909A (en) 1998-08-19 2000-09-19 International Business Machines Corporation Monolithic silicon-based nitride display device
JP4449467B2 (ja) * 2004-01-28 2010-04-14 サンケン電気株式会社 半導体装置
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7800097B2 (en) * 2004-12-13 2010-09-21 Panasonic Corporation Semiconductor device including independent active layers and method for fabricating the same
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
US7566918B2 (en) 2006-02-23 2009-07-28 Cree, Inc. Nitride based transistors for millimeter wave operation
JP2007273649A (ja) * 2006-03-30 2007-10-18 Eudyna Devices Inc 半導体装置および半導体装置製造用基板並びにその製造方法
US20080001173A1 (en) * 2006-06-23 2008-01-03 International Business Machines Corporation BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US20110095335A1 (en) * 2008-07-03 2011-04-28 Panasonic Corporation Nitride semiconductor device
DE102009018054B4 (de) * 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
WO2011024367A1 (ja) * 2009-08-27 2011-03-03 パナソニック株式会社 窒化物半導体装置

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