JP6025213B2 - フローティングおよびグランドされた基板領域を備えるｈｅｍｔ - Google Patents

フローティングおよびグランドされた基板領域を備えるｈｅｍｔ Download PDF

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JP6025213B2
JP6025213B2 JP2013534902A JP2013534902A JP6025213B2 JP 6025213 B2 JP6025213 B2 JP 6025213B2 JP 2013534902 A JP2013534902 A JP 2013534902A JP 2013534902 A JP2013534902 A JP 2013534902A JP 6025213 B2 JP6025213 B2 JP 6025213B2
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substrate structure
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multilayer substrate
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JP2013544022A5 (enExample
JP2013544022A (ja
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バヘル サンディープ
バヘル サンディープ
ブルシー コンスタンチン
ブルシー コンスタンチン
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National Semiconductor Corp
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National Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2013534902A 2010-10-20 2011-07-31 フローティングおよびグランドされた基板領域を備えるｈｅｍｔ Active JP6025213B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/908,514 2010-10-20
US12/908,514 US8513703B2 (en) 2010-10-20 2010-10-20 Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
PCT/US2011/046066 WO2012054123A1 (en) 2010-10-20 2011-07-31 Hemt with floating and grounded substrate regions

Publications (3)

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JP2013544022A JP2013544022A (ja) 2013-12-09
JP2013544022A5 JP2013544022A5 (enExample) 2014-08-14
JP6025213B2 true JP6025213B2 (ja) 2016-11-16

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JP2013534902A Active JP6025213B2 (ja) 2010-10-20 2011-07-31 フローティングおよびグランドされた基板領域を備えるｈｅｍｔ

Country Status (5)

Country Link
US (1) US8513703B2 (enExample)
JP (1) JP6025213B2 (enExample)
CN (1) CN103180957B (enExample)
TW (1) TWI518898B (enExample)
WO (1) WO2012054123A1 (enExample)

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JP2013026321A (ja) * 2011-07-19 2013-02-04 Sharp Corp 窒化物系半導体層を含むエピタキシャルウエハ
US9583574B2 (en) 2012-09-28 2017-02-28 Intel Corporation Epitaxial buffer layers for group III-N transistors on silicon substrates
US9142407B2 (en) 2013-01-16 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having sets of III-V compound layers and method of forming the same
CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法
JP2014236093A (ja) 2013-05-31 2014-12-15 サンケン電気株式会社 シリコン系基板、半導体装置、及び、半導体装置の製造方法
CN103531615A (zh) * 2013-10-15 2014-01-22 苏州晶湛半导体有限公司 氮化物功率晶体管及其制造方法
JP6553336B2 (ja) * 2014-07-28 2019-07-31 エア・ウォーター株式会社 半導体装置
CN105140281A (zh) * 2015-05-27 2015-12-09 苏州能讯高能半导体有限公司 一种半导体器件及其制造方法
CN105552047B (zh) * 2015-12-14 2018-02-27 中国电子科技集团公司第五十五研究所 一种AlGaN/GaN HEMT晶体管制造方法
JP2018041933A (ja) * 2016-09-09 2018-03-15 株式会社東芝 半導体装置及び半導体基板
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
FR3102006A1 (fr) * 2019-10-15 2021-04-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composant électronique
CN112201693A (zh) * 2020-09-30 2021-01-08 锐石创芯（深圳）科技有限公司 一种氮化镓半导体器件和制造方法
CN114883390A (zh) * 2022-04-02 2022-08-09 西安电子科技大学 一种低缓冲层漏电电流的hemt外延结构及hemt器件
US20230420553A1 (en) * 2022-06-27 2023-12-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure and method of manufacture

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US3029366A (en) 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
JPS501990B1 (enExample) * 1970-06-02 1975-01-22
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US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
JPH07273307A (ja) * 1994-03-31 1995-10-20 Hitachi Ltd 高耐圧半導体装置
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US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7800097B2 (en) * 2004-12-13 2010-09-21 Panasonic Corporation Semiconductor device including independent active layers and method for fabricating the same
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JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
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Also Published As

Publication number Publication date
WO2012054123A1 (en) 2012-04-26
US8513703B2 (en) 2013-08-20
US20120098036A1 (en) 2012-04-26
JP2013544022A (ja) 2013-12-09
TWI518898B (zh) 2016-01-21
TW201251008A (en) 2012-12-16
CN103180957B (zh) 2016-12-21
CN103180957A (zh) 2013-06-26

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