TWI518898B - 具有浮接基板區域和接地基板區域之三族氮化物ｈｅｍｔ - Google Patents

具有浮接基板區域和接地基板區域之三族氮化物ｈｅｍｔ Download PDF

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Publication number
TWI518898B
TWI518898B TW100136893A TW100136893A TWI518898B TW I518898 B TWI518898 B TW I518898B TW 100136893 A TW100136893 A TW 100136893A TW 100136893 A TW100136893 A TW 100136893A TW I518898 B TWI518898 B TW I518898B
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TW
Taiwan
Prior art keywords
layer
type
top surface
group iii
iii nitride
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TW100136893A
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English (en)
Chinese (zh)
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TW201251008A (en
Inventor
山蒂普 巴爾
康史坦丁 布魯西亞
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國家半導體公司
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Application filed by 國家半導體公司 filed Critical 國家半導體公司
Publication of TW201251008A publication Critical patent/TW201251008A/zh
Application granted granted Critical
Publication of TWI518898B publication Critical patent/TWI518898B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW100136893A 2010-10-20 2011-10-12 具有浮接基板區域和接地基板區域之三族氮化物ｈｅｍｔ TWI518898B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/908,514 US8513703B2 (en) 2010-10-20 2010-10-20 Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same

Publications (2)

Publication Number Publication Date
TW201251008A TW201251008A (en) 2012-12-16
TWI518898B true TWI518898B (zh) 2016-01-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW100136893A TWI518898B (zh) 2010-10-20 2011-10-12 具有浮接基板區域和接地基板區域之三族氮化物ｈｅｍｔ

Country Status (5)

Country Link
US (1) US8513703B2 (enExample)
JP (1) JP6025213B2 (enExample)
CN (1) CN103180957B (enExample)
TW (1) TWI518898B (enExample)
WO (1) WO2012054123A1 (enExample)

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US9583574B2 (en) 2012-09-28 2017-02-28 Intel Corporation Epitaxial buffer layers for group III-N transistors on silicon substrates
US9142407B2 (en) 2013-01-16 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having sets of III-V compound layers and method of forming the same
CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法
JP2014236093A (ja) 2013-05-31 2014-12-15 サンケン電気株式会社 シリコン系基板、半導体装置、及び、半導体装置の製造方法
CN103531615A (zh) * 2013-10-15 2014-01-22 苏州晶湛半导体有限公司 氮化物功率晶体管及其制造方法
JP6553336B2 (ja) * 2014-07-28 2019-07-31 エア・ウォーター株式会社 半導体装置
CN105140281A (zh) * 2015-05-27 2015-12-09 苏州能讯高能半导体有限公司 一种半导体器件及其制造方法
CN105552047B (zh) * 2015-12-14 2018-02-27 中国电子科技集团公司第五十五研究所 一种AlGaN/GaN HEMT晶体管制造方法
JP2018041933A (ja) * 2016-09-09 2018-03-15 株式会社東芝 半導体装置及び半導体基板
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
FR3102006A1 (fr) * 2019-10-15 2021-04-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composant électronique
CN112201693A (zh) * 2020-09-30 2021-01-08 锐石创芯（深圳）科技有限公司 一种氮化镓半导体器件和制造方法
CN114883390A (zh) * 2022-04-02 2022-08-09 西安电子科技大学 一种低缓冲层漏电电流的hemt外延结构及hemt器件
US20230420553A1 (en) * 2022-06-27 2023-12-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure and method of manufacture

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Also Published As

Publication number Publication date
WO2012054123A1 (en) 2012-04-26
US8513703B2 (en) 2013-08-20
JP6025213B2 (ja) 2016-11-16
US20120098036A1 (en) 2012-04-26
JP2013544022A (ja) 2013-12-09
TW201251008A (en) 2012-12-16
CN103180957B (zh) 2016-12-21
CN103180957A (zh) 2013-06-26

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