CN205542793U - 级联开关结构 - Google Patents
级联开关结构 Download PDFInfo
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- CN205542793U CN205542793U CN201620131891.9U CN201620131891U CN205542793U CN 205542793 U CN205542793 U CN 205542793U CN 201620131891 U CN201620131891 U CN 201620131891U CN 205542793 U CN205542793 U CN 205542793U
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- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
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Applications Claiming Priority (5)
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US201462069761P | 2014-10-28 | 2014-10-28 | |
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US14/853,720 | 2015-09-14 | ||
US14/853,720 US9748224B2 (en) | 2014-10-28 | 2015-09-14 | Heterojunction semiconductor device having integrated clamping device |
CN201520769614.6U CN205140988U (zh) | 2014-10-28 | 2015-09-29 | 半导体器件 |
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CN201620131891.9U Active CN205542793U (zh) | 2014-10-28 | 2015-09-29 | 级联开关结构 |
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JP2016171231A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 半導体装置および半導体パッケージ |
US10985284B2 (en) | 2016-04-15 | 2021-04-20 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current |
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CN106601789B (zh) * | 2016-12-05 | 2018-03-30 | 苏州捷芯威半导体有限公司 | 一种氮化镓基肖特基势垒整流器 |
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CN112331718B (zh) * | 2019-08-05 | 2022-02-22 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制备方法 |
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CN111312712A (zh) * | 2020-02-25 | 2020-06-19 | 英诺赛科(珠海)科技有限公司 | 半导体器件及其制造方法 |
CN111293174A (zh) * | 2020-02-25 | 2020-06-16 | 英诺赛科(珠海)科技有限公司 | 半导体器件及其制造方法 |
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WO2021212366A1 (zh) * | 2020-04-22 | 2021-10-28 | 英诺赛科(珠海)科技有限公司 | 具有多通道异质结构的半导体器件及其制造方法 |
CN111602248A (zh) * | 2020-04-22 | 2020-08-28 | 英诺赛科(珠海)科技有限公司 | 具有多通道异质结构的半导体器件及其制造方法 |
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US9748224B2 (en) * | 2014-10-28 | 2017-08-29 | Semiconductor Components Industries, Llc | Heterojunction semiconductor device having integrated clamping device |
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2015
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US20170309617A1 (en) | 2017-10-26 |
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Inventor after: B*Padman Manhammer Inventor after: P*Carter Latman Inventor after: Hossain Zia Inventor after: Liu Chunli Inventor after: MacDonald Jeff Inventor after: Salih Ali Inventor after: A Youenge Inventor before: B*Padman Manhammer Inventor before: P*Carter Latman Inventor before: Hossain Zia Inventor before: Liu Chunli Inventor before: MacDonald Jeff |