JP2016522578A5 - - Google Patents
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- Publication number
- JP2016522578A5 JP2016522578A5 JP2016515730A JP2016515730A JP2016522578A5 JP 2016522578 A5 JP2016522578 A5 JP 2016522578A5 JP 2016515730 A JP2016515730 A JP 2016515730A JP 2016515730 A JP2016515730 A JP 2016515730A JP 2016522578 A5 JP2016522578 A5 JP 2016522578A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doping concentration
- semiconductor material
- photodetector according
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- -1 GaAs compound Chemical class 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13002838.4A EP2808908B1 (en) | 2013-05-31 | 2013-05-31 | High-speed photodetector |
| EP13002838.4 | 2013-05-31 | ||
| PCT/EP2014/060432 WO2014191275A1 (en) | 2013-05-31 | 2014-05-21 | High speed photodetector |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016522578A JP2016522578A (ja) | 2016-07-28 |
| JP2016522578A5 true JP2016522578A5 (enExample) | 2017-07-27 |
| JP6466416B2 JP6466416B2 (ja) | 2019-02-06 |
Family
ID=48538955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016515730A Active JP6466416B2 (ja) | 2013-05-31 | 2014-05-21 | 高速光検出器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9882080B2 (enExample) |
| EP (1) | EP2808908B1 (enExample) |
| JP (1) | JP6466416B2 (enExample) |
| CN (1) | CN105283964B (enExample) |
| SG (1) | SG11201508462PA (enExample) |
| TW (1) | TWI620339B (enExample) |
| WO (1) | WO2014191275A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3329518A1 (en) * | 2015-07-28 | 2018-06-06 | University Of Rochester | Low dark current, resonant cavity-enhanced infrared photodetectors |
| JP6880601B2 (ja) * | 2016-08-22 | 2021-06-02 | 富士通株式会社 | 光検出器及び撮像装置 |
| US10396527B2 (en) * | 2017-06-14 | 2019-08-27 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser with high modulation speed |
| US10490687B2 (en) | 2018-01-29 | 2019-11-26 | Waymo Llc | Controlling detection time in photodetectors |
| CN109244152B (zh) * | 2018-08-02 | 2023-09-29 | 芯思杰技术(深圳)股份有限公司 | 一种短距离通信高速光电二极管芯片及其制作方法 |
| UA120025C2 (uk) * | 2019-03-26 | 2019-09-10 | Андрій Дмитрович Хворостяний | Напівпровідниковий термоелектричний генератор |
| TWI835924B (zh) * | 2019-11-18 | 2024-03-21 | 晶元光電股份有限公司 | 光偵測元件 |
| CN112420859B (zh) * | 2020-11-18 | 2022-05-13 | 上海科技大学 | 850nm波段吸收区部分耗尽光电探测器及其制备方法 |
| CN114520270B (zh) * | 2020-11-20 | 2024-07-05 | 苏州华太电子技术股份有限公司 | 一种间接带隙半导体光电探测器件及其制作方法 |
| CN114864730B (zh) * | 2021-02-04 | 2024-12-27 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
| US12278304B2 (en) | 2021-02-04 | 2025-04-15 | Mellanox Technologies, Ltd. | High modulation speed PIN-type photodiode |
| US20230299223A1 (en) * | 2022-03-16 | 2023-09-21 | Sensors Unlimited, Inc. | Photodiode structures |
| US20230375729A1 (en) * | 2022-05-20 | 2023-11-23 | Redlen Technologies, Inc. | Radiation detector having asymmetric contacts |
| WO2025238716A1 (ja) * | 2024-05-14 | 2025-11-20 | Ｎｔｔ株式会社 | 受光素子 |
| CN118825104A (zh) * | 2024-06-21 | 2024-10-22 | 中国电子科技集团公司第十一研究所 | 一种高性能铟镓砷红外探测器结构 |
| CN119947336A (zh) * | 2025-01-20 | 2025-05-06 | 隆基绿能科技股份有限公司 | 一种太阳能电池片以及光伏组件 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2256746B (en) * | 1991-06-12 | 1995-05-03 | Marconi Gec Ltd | Semiconductor devices |
| US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
| US5818096A (en) | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
| JP2000223736A (ja) * | 1999-01-28 | 2000-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 金属−半導体−金属型受光素子 |
| US7202102B2 (en) | 2001-11-27 | 2007-04-10 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
| JP2003174185A (ja) * | 2001-12-05 | 2003-06-20 | Fujitsu Ltd | 半導体受光素子 |
| CA2474556C (en) | 2002-02-01 | 2014-10-07 | Picometrix, Inc. | Enhanced photodetector |
| JP4030847B2 (ja) * | 2002-09-20 | 2008-01-09 | ユーディナデバイス株式会社 | 半導体受光装置 |
| US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
| JP2006229156A (ja) * | 2005-02-21 | 2006-08-31 | Ntt Electornics Corp | フォトダイオード |
| KR101362688B1 (ko) * | 2007-04-13 | 2014-02-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 및 그 제조 방법 |
| US8895839B2 (en) * | 2008-02-01 | 2014-11-25 | President And Fellows Of Harvard College | Multijunction photovoltaic device |
| JP2011176094A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
| JP2011258809A (ja) * | 2010-06-10 | 2011-12-22 | Mitsubishi Electric Corp | 半導体受光素子 |
| JP2012124404A (ja) * | 2010-12-10 | 2012-06-28 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオードおよびその製造方法 |
| TWI412149B (zh) * | 2010-12-16 | 2013-10-11 | Univ Nat Central | Laser energy conversion device |
| JP2012146806A (ja) * | 2011-01-12 | 2012-08-02 | Irspec Corp | 格子不整合赤外化合物半導体受光素子 |
-
2013
- 2013-05-31 EP EP13002838.4A patent/EP2808908B1/en active Active
-
2014
- 2014-05-21 SG SG11201508462PA patent/SG11201508462PA/en unknown
- 2014-05-21 WO PCT/EP2014/060432 patent/WO2014191275A1/en not_active Ceased
- 2014-05-21 JP JP2016515730A patent/JP6466416B2/ja active Active
- 2014-05-21 CN CN201480029484.0A patent/CN105283964B/zh active Active
- 2014-05-30 TW TW103119120A patent/TWI620339B/zh active
-
2015
- 2015-11-17 US US14/943,723 patent/US9882080B2/en active Active
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