TWI620339B - 高速光偵測器 - Google Patents
高速光偵測器 Download PDFInfo
- Publication number
- TWI620339B TWI620339B TW103119120A TW103119120A TWI620339B TW I620339 B TWI620339 B TW I620339B TW 103119120 A TW103119120 A TW 103119120A TW 103119120 A TW103119120 A TW 103119120A TW I620339 B TWI620339 B TW I620339B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- photodetector
- band gap
- semiconductor material
- gap energy
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13002838.4A EP2808908B1 (en) | 2013-05-31 | 2013-05-31 | High-speed photodetector |
| ??13002838.4 | 2013-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201507187A TW201507187A (zh) | 2015-02-16 |
| TWI620339B true TWI620339B (zh) | 2018-04-01 |
Family
ID=48538955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103119120A TWI620339B (zh) | 2013-05-31 | 2014-05-30 | 高速光偵測器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9882080B2 (enExample) |
| EP (1) | EP2808908B1 (enExample) |
| JP (1) | JP6466416B2 (enExample) |
| CN (1) | CN105283964B (enExample) |
| SG (1) | SG11201508462PA (enExample) |
| TW (1) | TWI620339B (enExample) |
| WO (1) | WO2014191275A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3329518A1 (en) * | 2015-07-28 | 2018-06-06 | University Of Rochester | Low dark current, resonant cavity-enhanced infrared photodetectors |
| JP6880601B2 (ja) * | 2016-08-22 | 2021-06-02 | 富士通株式会社 | 光検出器及び撮像装置 |
| US10396527B2 (en) * | 2017-06-14 | 2019-08-27 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser with high modulation speed |
| US10490687B2 (en) | 2018-01-29 | 2019-11-26 | Waymo Llc | Controlling detection time in photodetectors |
| CN109244152B (zh) * | 2018-08-02 | 2023-09-29 | 芯思杰技术(深圳)股份有限公司 | 一种短距离通信高速光电二极管芯片及其制作方法 |
| UA120025C2 (uk) * | 2019-03-26 | 2019-09-10 | Андрій Дмитрович Хворостяний | Напівпровідниковий термоелектричний генератор |
| TWI835924B (zh) * | 2019-11-18 | 2024-03-21 | 晶元光電股份有限公司 | 光偵測元件 |
| CN112420859B (zh) * | 2020-11-18 | 2022-05-13 | 上海科技大学 | 850nm波段吸收区部分耗尽光电探测器及其制备方法 |
| CN114520270B (zh) * | 2020-11-20 | 2024-07-05 | 苏州华太电子技术股份有限公司 | 一种间接带隙半导体光电探测器件及其制作方法 |
| CN114864730B (zh) * | 2021-02-04 | 2024-12-27 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
| US12278304B2 (en) | 2021-02-04 | 2025-04-15 | Mellanox Technologies, Ltd. | High modulation speed PIN-type photodiode |
| US20230299223A1 (en) * | 2022-03-16 | 2023-09-21 | Sensors Unlimited, Inc. | Photodiode structures |
| US20230375729A1 (en) * | 2022-05-20 | 2023-11-23 | Redlen Technologies, Inc. | Radiation detector having asymmetric contacts |
| WO2025238716A1 (ja) * | 2024-05-14 | 2025-11-20 | Ｎｔｔ株式会社 | 受光素子 |
| CN118825104A (zh) * | 2024-06-21 | 2024-10-22 | 中国电子科技集团公司第十一研究所 | 一种高性能铟镓砷红外探测器结构 |
| CN119947336A (zh) * | 2025-01-20 | 2025-05-06 | 隆基绿能科技股份有限公司 | 一种太阳能电池片以及光伏组件 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200903819A (en) * | 2007-04-13 | 2009-01-16 | Semiconductor Energy Lab | Photovoltaic device and method for manufacturing the same |
| US20110100441A1 (en) * | 2008-02-01 | 2011-05-05 | President & Fellows Of Harvard College | Multijunction photovoltaic device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2256746B (en) * | 1991-06-12 | 1995-05-03 | Marconi Gec Ltd | Semiconductor devices |
| US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
| US5818096A (en) | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
| JP2000223736A (ja) * | 1999-01-28 | 2000-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 金属−半導体−金属型受光素子 |
| US7202102B2 (en) | 2001-11-27 | 2007-04-10 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
| JP2003174185A (ja) * | 2001-12-05 | 2003-06-20 | Fujitsu Ltd | 半導体受光素子 |
| CA2474556C (en) | 2002-02-01 | 2014-10-07 | Picometrix, Inc. | Enhanced photodetector |
| JP4030847B2 (ja) * | 2002-09-20 | 2008-01-09 | ユーディナデバイス株式会社 | 半導体受光装置 |
| US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
| JP2006229156A (ja) * | 2005-02-21 | 2006-08-31 | Ntt Electornics Corp | フォトダイオード |
| JP2011176094A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
| JP2011258809A (ja) * | 2010-06-10 | 2011-12-22 | Mitsubishi Electric Corp | 半導体受光素子 |
| JP2012124404A (ja) * | 2010-12-10 | 2012-06-28 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオードおよびその製造方法 |
| TWI412149B (zh) * | 2010-12-16 | 2013-10-11 | Univ Nat Central | Laser energy conversion device |
| JP2012146806A (ja) * | 2011-01-12 | 2012-08-02 | Irspec Corp | 格子不整合赤外化合物半導体受光素子 |
-
2013
- 2013-05-31 EP EP13002838.4A patent/EP2808908B1/en active Active
-
2014
- 2014-05-21 SG SG11201508462PA patent/SG11201508462PA/en unknown
- 2014-05-21 WO PCT/EP2014/060432 patent/WO2014191275A1/en not_active Ceased
- 2014-05-21 JP JP2016515730A patent/JP6466416B2/ja active Active
- 2014-05-21 CN CN201480029484.0A patent/CN105283964B/zh active Active
- 2014-05-30 TW TW103119120A patent/TWI620339B/zh active
-
2015
- 2015-11-17 US US14/943,723 patent/US9882080B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200903819A (en) * | 2007-04-13 | 2009-01-16 | Semiconductor Energy Lab | Photovoltaic device and method for manufacturing the same |
| US20110100441A1 (en) * | 2008-02-01 | 2011-05-05 | President & Fellows Of Harvard College | Multijunction photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| US9882080B2 (en) | 2018-01-30 |
| US20160172523A1 (en) | 2016-06-16 |
| CN105283964B (zh) | 2018-04-13 |
| TW201507187A (zh) | 2015-02-16 |
| CN105283964A (zh) | 2016-01-27 |
| JP2016522578A (ja) | 2016-07-28 |
| EP2808908A1 (en) | 2014-12-03 |
| EP2808908B1 (en) | 2023-04-19 |
| JP6466416B2 (ja) | 2019-02-06 |
| WO2014191275A1 (en) | 2014-12-04 |
| SG11201508462PA (en) | 2015-11-27 |
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