CN105283964B - 高速光探测器 - Google Patents

高速光探测器 Download PDF

Info

Publication number
CN105283964B
CN105283964B CN201480029484.0A CN201480029484A CN105283964B CN 105283964 B CN105283964 B CN 105283964B CN 201480029484 A CN201480029484 A CN 201480029484A CN 105283964 B CN105283964 B CN 105283964B
Authority
CN
China
Prior art keywords
layer
photodetector
bandgap energy
doping concentration
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480029484.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN105283964A (zh
Inventor
M.G.查辛斯基
N.P.奇蒂卡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mellanox Technologies Ltd
Original Assignee
Mellanox Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mellanox Technologies Ltd filed Critical Mellanox Technologies Ltd
Publication of CN105283964A publication Critical patent/CN105283964A/zh
Application granted granted Critical
Publication of CN105283964B publication Critical patent/CN105283964B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

Landscapes

  • Light Receiving Elements (AREA)
CN201480029484.0A 2013-05-31 2014-05-21 高速光探测器 Active CN105283964B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13002838.4 2013-05-31
EP13002838.4A EP2808908B1 (en) 2013-05-31 2013-05-31 High-speed photodetector
PCT/EP2014/060432 WO2014191275A1 (en) 2013-05-31 2014-05-21 High speed photodetector

Publications (2)

Publication Number Publication Date
CN105283964A CN105283964A (zh) 2016-01-27
CN105283964B true CN105283964B (zh) 2018-04-13

Family

ID=48538955

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480029484.0A Active CN105283964B (zh) 2013-05-31 2014-05-21 高速光探测器

Country Status (7)

Country Link
US (1) US9882080B2 (enExample)
EP (1) EP2808908B1 (enExample)
JP (1) JP6466416B2 (enExample)
CN (1) CN105283964B (enExample)
SG (1) SG11201508462PA (enExample)
TW (1) TWI620339B (enExample)
WO (1) WO2014191275A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017019158A1 (en) * 2015-07-28 2017-02-02 University Of Rochester Low dark current, resonant cavity-enhanced infrared photodetectors
JP6880601B2 (ja) * 2016-08-22 2021-06-02 富士通株式会社 光検出器及び撮像装置
US10396527B2 (en) * 2017-06-14 2019-08-27 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser with high modulation speed
US10490687B2 (en) 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors
CN109244152B (zh) * 2018-08-02 2023-09-29 芯思杰技术(深圳)股份有限公司 一种短距离通信高速光电二极管芯片及其制作方法
UA120025C2 (uk) * 2019-03-26 2019-09-10 Андрій Дмитрович Хворостяний Напівпровідниковий термоелектричний генератор
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件
CN112420859B (zh) * 2020-11-18 2022-05-13 上海科技大学 850nm波段吸收区部分耗尽光电探测器及其制备方法
CN114520270B (zh) * 2020-11-20 2024-07-05 苏州华太电子技术股份有限公司 一种间接带隙半导体光电探测器件及其制作方法
CN114864730B (zh) * 2021-02-04 2024-12-27 迈络思科技有限公司 高调制速度pin型光电二极管
US12278304B2 (en) 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode
US20230299223A1 (en) * 2022-03-16 2023-09-21 Sensors Unlimited, Inc. Photodiode structures
US20230375729A1 (en) * 2022-05-20 2023-11-23 Redlen Technologies, Inc. Radiation detector having asymmetric contacts
WO2025238716A1 (ja) * 2024-05-14 2025-11-20 Ｎｔｔ株式会社 受光素子
CN118825104A (zh) * 2024-06-21 2024-10-22 中国电子科技集团公司第十一研究所 一种高性能铟镓砷红外探测器结构
CN119947336A (zh) * 2025-01-20 2025-05-06 隆基绿能科技股份有限公司 一种太阳能电池片以及光伏组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US20040056250A1 (en) * 2002-09-20 2004-03-25 Fujitsu Quantum Devices Limited Semiconductor light-receiving device
JP2011176094A (ja) * 2010-02-24 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> フォトダイオード

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256746B (en) * 1991-06-12 1995-05-03 Marconi Gec Ltd Semiconductor devices
US5818096A (en) 1996-04-05 1998-10-06 Nippon Telegraph And Telephone Corp. Pin photodiode with improved frequency response and saturation output
JP2000223736A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 金属−半導体−金属型受光素子
US7202102B2 (en) 2001-11-27 2007-04-10 Jds Uniphase Corporation Doped absorption for enhanced responsivity for high speed photodiodes
JP2003174185A (ja) * 2001-12-05 2003-06-20 Fujitsu Ltd 半導体受光素子
WO2003065416A2 (en) 2002-02-01 2003-08-07 Picometrix, Inc. Enhanced photodetector
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
JP2006229156A (ja) * 2005-02-21 2006-08-31 Ntt Electornics Corp フォトダイオード
EP2143146A1 (en) * 2007-04-13 2010-01-13 Semiconductor Energy Laboratory Co, Ltd. Photovoltaic device and method for manufacturing the same
US8895839B2 (en) * 2008-02-01 2014-11-25 President And Fellows Of Harvard College Multijunction photovoltaic device
JP2011258809A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体受光素子
JP2012124404A (ja) * 2010-12-10 2012-06-28 Nippon Telegr & Teleph Corp <Ntt> フォトダイオードおよびその製造方法
TWI412149B (zh) * 2010-12-16 2013-10-11 Univ Nat Central Laser energy conversion device
JP2012146806A (ja) * 2011-01-12 2012-08-02 Irspec Corp 格子不整合赤外化合物半導体受光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US20040056250A1 (en) * 2002-09-20 2004-03-25 Fujitsu Quantum Devices Limited Semiconductor light-receiving device
JP2011176094A (ja) * 2010-02-24 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> フォトダイオード

Also Published As

Publication number Publication date
WO2014191275A1 (en) 2014-12-04
SG11201508462PA (en) 2015-11-27
TW201507187A (zh) 2015-02-16
TWI620339B (zh) 2018-04-01
US20160172523A1 (en) 2016-06-16
EP2808908B1 (en) 2023-04-19
US9882080B2 (en) 2018-01-30
CN105283964A (zh) 2016-01-27
EP2808908A1 (en) 2014-12-03
JP2016522578A (ja) 2016-07-28
JP6466416B2 (ja) 2019-02-06

Similar Documents

Publication Publication Date Title
CN105283964B (zh) 高速光探测器
US8692301B2 (en) Nanostructured photodiode
US7202102B2 (en) Doped absorption for enhanced responsivity for high speed photodiodes
US6740908B1 (en) Extended drift heterostructure photodiode having enhanced electron response
US6614086B2 (en) Avalanche photodetector
US6831309B2 (en) Unipolar photodiode having a schottky junction contact
JP2934294B2 (ja) アバランシェフォトダイオード
JP5433948B2 (ja) 半導体受光素子
JP2002203986A6 (ja) アバランシェ光検出器
JP2004200703A5 (enExample)
CN105957908A (zh) 倍增区控制的雪崩光电二极管及其制造方法
US7038251B2 (en) Semiconductor device
CN113471326A (zh) 一种ⅲ族氮化物异质结光电探测器
KR20150012303A (ko) 평탄 애벌란시 포토다이오드
JP2015201504A (ja) アバランシ・フォトダイオード
US20240304739A1 (en) Semiconductor light-receiving device
CN116705892B (zh) 一种雪崩二极管
CN114899269B (zh) 高增益光电探测器和高增益光电探测方法
CN220400608U (zh) 雪崩光电二极管及应用其的光接收器
KR100676733B1 (ko) 엔아이피 구조를 갖는 자외선검지기
JPH0575160A (ja) アバランシエホトダイオードおよびその動作方法
DEEN Photodetectors for Optical
JP2001237453A (ja) 半導体受光素子
JPS62183570A (ja) 光検出装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20170320

Address after: Israel Yuekeni Mourinho

Applicant after: Mellanox Technologies Ltd.

Address before: Sweden Iyer Ferla

Applicant before: Tai Ke electronics Sweden Holdings Co.,Ltd

GR01 Patent grant
GR01 Patent grant