JP2004200703A5 - - Google Patents
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- Publication number
- JP2004200703A5 JP2004200703A5 JP2003421345A JP2003421345A JP2004200703A5 JP 2004200703 A5 JP2004200703 A5 JP 2004200703A5 JP 2003421345 A JP2003421345 A JP 2003421345A JP 2003421345 A JP2003421345 A JP 2003421345A JP 2004200703 A5 JP2004200703 A5 JP 2004200703A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light absorbing
- photodiode
- band gap
- unipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 25
- 230000031700 light absorption Effects 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000969 carrier Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 451
- 239000004065 semiconductor Substances 0.000 description 74
- 238000000034 method Methods 0.000 description 24
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 9
- 238000005286 illumination Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/322,986 US6831309B2 (en) | 2002-12-18 | 2002-12-18 | Unipolar photodiode having a schottky junction contact |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004200703A JP2004200703A (ja) | 2004-07-15 |
| JP2004200703A5 true JP2004200703A5 (enExample) | 2007-01-18 |
Family
ID=32593081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003421345A Pending JP2004200703A (ja) | 2002-12-18 | 2003-12-18 | ショットキー接合接点を備えたユニポールフォトダイオード |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6831309B2 (enExample) |
| JP (1) | JP2004200703A (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003060599A2 (en) * | 2001-12-27 | 2003-07-24 | Bookham Technology Plc | An in-line waveguide photo detector |
| DE10244200A1 (de) * | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
| GB2417126A (en) * | 2004-08-09 | 2006-02-15 | Qinetiq Ltd | Method for fabricating lateral semiconductor device |
| FR2879818B1 (fr) * | 2004-12-17 | 2007-04-20 | Commissariat Energie Atomique | Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif |
| US7339209B2 (en) * | 2005-09-07 | 2008-03-04 | The Boeing Company | Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode |
| GB0606540D0 (en) * | 2006-03-31 | 2006-05-10 | Univ London | Photodetector |
| US8044435B2 (en) * | 2006-11-14 | 2011-10-25 | Lockheed Martin Corporation | Sub-pixel nBn detector |
| US8138583B2 (en) * | 2007-02-16 | 2012-03-20 | Cree, Inc. | Diode having reduced on-resistance and associated method of manufacture |
| KR100872717B1 (ko) * | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| JP5498662B2 (ja) * | 2008-03-26 | 2014-05-21 | 国立大学法人 東京大学 | 半導体装置および半導体装置の製造方法 |
| US8084739B2 (en) * | 2008-07-16 | 2011-12-27 | Infrared Newco., Inc. | Imaging apparatus and methods |
| JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
| WO2010036956A1 (en) * | 2008-09-25 | 2010-04-01 | California Institute Of Technology | High operating temperature barrier infrared detector with tailorable cutoff wavelength |
| EP2477234B1 (en) | 2009-09-07 | 2021-06-23 | Sumitomo Electric Industries, Ltd. | Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer |
| JP5630213B2 (ja) * | 2010-10-28 | 2014-11-26 | 富士通株式会社 | 光検出素子 |
| US8334550B1 (en) | 2011-06-09 | 2012-12-18 | Northrop Grumman Systems Corporation | Unipolar diode with low turn-on voltage |
| JP6162401B2 (ja) * | 2012-12-28 | 2017-07-12 | 株式会社東芝 | 光半導体デバイス |
| US10014424B2 (en) * | 2014-03-13 | 2018-07-03 | Raytheon Company | Reduced junction area barrier-based photodetector |
| US11231382B2 (en) * | 2016-06-15 | 2022-01-25 | William N. Carr | Integrated thermal sensor comprising a photonic crystal |
| US11300453B2 (en) | 2017-06-18 | 2022-04-12 | William N. Carr | Photonic- and phononic-structured pixel for electromagnetic radiation and detection |
| CN111312827B (zh) * | 2018-11-27 | 2022-03-01 | 上海新微技术研发中心有限公司 | 一种单向载流子传输光电探测器及其制造方法 |
| CN111599879B (zh) * | 2020-06-11 | 2022-05-31 | 武汉华星光电技术有限公司 | Pin感光器件及其制作方法、及显示面板 |
| US20230253516A1 (en) * | 2020-07-22 | 2023-08-10 | Nippon Telegraph And Telephone Corporation | Photodetector |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
| US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
-
2002
- 2002-12-18 US US10/322,986 patent/US6831309B2/en not_active Expired - Lifetime
-
2003
- 2003-12-18 JP JP2003421345A patent/JP2004200703A/ja active Pending
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