JP2004200703A - ショットキー接合接点を備えたユニポールフォトダイオード - Google Patents

ショットキー接合接点を備えたユニポールフォトダイオード Download PDF

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Publication number
JP2004200703A
JP2004200703A JP2003421345A JP2003421345A JP2004200703A JP 2004200703 A JP2004200703 A JP 2004200703A JP 2003421345 A JP2003421345 A JP 2003421345A JP 2003421345 A JP2003421345 A JP 2003421345A JP 2004200703 A JP2004200703 A JP 2004200703A
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JP
Japan
Prior art keywords
layer
light absorbing
photodiode
band gap
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003421345A
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English (en)
Japanese (ja)
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JP2004200703A5 (enExample
Inventor
Kirk S Giboney
キーク・エス・ギボニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004200703A publication Critical patent/JP2004200703A/ja
Publication of JP2004200703A5 publication Critical patent/JP2004200703A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Light Receiving Elements (AREA)
JP2003421345A 2002-12-18 2003-12-18 ショットキー接合接点を備えたユニポールフォトダイオード Pending JP2004200703A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/322,986 US6831309B2 (en) 2002-12-18 2002-12-18 Unipolar photodiode having a schottky junction contact

Publications (2)

Publication Number Publication Date
JP2004200703A true JP2004200703A (ja) 2004-07-15
JP2004200703A5 JP2004200703A5 (enExample) 2007-01-18

Family

ID=32593081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003421345A Pending JP2004200703A (ja) 2002-12-18 2003-12-18 ショットキー接合接点を備えたユニポールフォトダイオード

Country Status (2)

Country Link
US (1) US6831309B2 (enExample)
JP (1) JP2004200703A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4794558B2 (ja) * 2004-08-09 2011-10-19 キネテイツク・リミテツド 横型半導体デバイスを製作する方法
JP2014130939A (ja) * 2012-12-28 2014-07-10 Toshiba Corp 光半導体デバイス

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060599A2 (en) * 2001-12-27 2003-07-24 Bookham Technology Plc An in-line waveguide photo detector
DE10244200A1 (de) * 2002-09-23 2004-04-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
FR2879818B1 (fr) * 2004-12-17 2007-04-20 Commissariat Energie Atomique Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif
US7339209B2 (en) * 2005-09-07 2008-03-04 The Boeing Company Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode
GB0606540D0 (en) * 2006-03-31 2006-05-10 Univ London Photodetector
US8044435B2 (en) * 2006-11-14 2011-10-25 Lockheed Martin Corporation Sub-pixel nBn detector
US8138583B2 (en) * 2007-02-16 2012-03-20 Cree, Inc. Diode having reduced on-resistance and associated method of manufacture
KR100872717B1 (ko) * 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5498662B2 (ja) * 2008-03-26 2014-05-21 国立大学法人 東京大学 半導体装置および半導体装置の製造方法
US8084739B2 (en) 2008-07-16 2011-12-27 Infrared Newco., Inc. Imaging apparatus and methods
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
EP2329534A1 (en) * 2008-09-25 2011-06-08 California Institute of Technology High operating temperature barrier infrared detector with tailorable cutoff wavelength
EP2477234B1 (en) 2009-09-07 2021-06-23 Sumitomo Electric Industries, Ltd. Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer
JP5630213B2 (ja) * 2010-10-28 2014-11-26 富士通株式会社 光検出素子
US8334550B1 (en) 2011-06-09 2012-12-18 Northrop Grumman Systems Corporation Unipolar diode with low turn-on voltage
US10014424B2 (en) * 2014-03-13 2018-07-03 Raytheon Company Reduced junction area barrier-based photodetector
US11231382B2 (en) * 2016-06-15 2022-01-25 William N. Carr Integrated thermal sensor comprising a photonic crystal
US11300453B2 (en) 2017-06-18 2022-04-12 William N. Carr Photonic- and phononic-structured pixel for electromagnetic radiation and detection
CN111312827B (zh) * 2018-11-27 2022-03-01 上海新微技术研发中心有限公司 一种单向载流子传输光电探测器及其制造方法
CN111599879B (zh) * 2020-06-11 2022-05-31 武汉华星光电技术有限公司 Pin感光器件及其制作方法、及显示面板
WO2022018860A1 (ja) * 2020-07-22 2022-01-27 日本電信電話株式会社 受光器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652435A (en) * 1995-09-01 1997-07-29 The United States Of America As Represented By The Secretary Of The Air Force Vertical structure schottky diode optical detector
US5818096A (en) * 1996-04-05 1998-10-06 Nippon Telegraph And Telephone Corp. Pin photodiode with improved frequency response and saturation output
US6104074A (en) * 1997-12-11 2000-08-15 Apa Optics, Inc. Schottky barrier detectors for visible-blind ultraviolet detection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4794558B2 (ja) * 2004-08-09 2011-10-19 キネテイツク・リミテツド 横型半導体デバイスを製作する方法
JP2014130939A (ja) * 2012-12-28 2014-07-10 Toshiba Corp 光半導体デバイス

Also Published As

Publication number Publication date
US20040119129A1 (en) 2004-06-24
US6831309B2 (en) 2004-12-14

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