JP6466416B2 - 高速光検出器 - Google Patents

高速光検出器 Download PDF

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Publication number
JP6466416B2
JP6466416B2 JP2016515730A JP2016515730A JP6466416B2 JP 6466416 B2 JP6466416 B2 JP 6466416B2 JP 2016515730 A JP2016515730 A JP 2016515730A JP 2016515730 A JP2016515730 A JP 2016515730A JP 6466416 B2 JP6466416 B2 JP 6466416B2
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layer
semiconductor material
band gap
photodetector
gap energy
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Japanese (ja)
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JP2016522578A (ja
JP2016522578A5 (enExample
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グルゼゴーツ チャシンスキ マレック
グルゼゴーツ チャシンスキ マレック
パンタッツィ チティーカ ニコラエ
パンタッツィ チティーカ ニコラエ
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メラノックス テクノロジーズ リミテッド
メラノックス テクノロジーズ リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

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JP2016515730A 2013-05-31 2014-05-21 高速光検出器 Active JP6466416B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13002838.4A EP2808908B1 (en) 2013-05-31 2013-05-31 High-speed photodetector
EP13002838.4 2013-05-31
PCT/EP2014/060432 WO2014191275A1 (en) 2013-05-31 2014-05-21 High speed photodetector

Publications (3)

Publication Number Publication Date
JP2016522578A JP2016522578A (ja) 2016-07-28
JP2016522578A5 JP2016522578A5 (enExample) 2017-07-27
JP6466416B2 true JP6466416B2 (ja) 2019-02-06

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JP2016515730A Active JP6466416B2 (ja) 2013-05-31 2014-05-21 高速光検出器

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US (1) US9882080B2 (enExample)
EP (1) EP2808908B1 (enExample)
JP (1) JP6466416B2 (enExample)
CN (1) CN105283964B (enExample)
SG (1) SG11201508462PA (enExample)
TW (1) TWI620339B (enExample)
WO (1) WO2014191275A1 (enExample)

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EP3329518A1 (en) * 2015-07-28 2018-06-06 University Of Rochester Low dark current, resonant cavity-enhanced infrared photodetectors
JP6880601B2 (ja) * 2016-08-22 2021-06-02 富士通株式会社 光検出器及び撮像装置
US10396527B2 (en) * 2017-06-14 2019-08-27 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser with high modulation speed
US10490687B2 (en) 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors
CN109244152B (zh) * 2018-08-02 2023-09-29 芯思杰技术(深圳)股份有限公司 一种短距离通信高速光电二极管芯片及其制作方法
UA120025C2 (uk) * 2019-03-26 2019-09-10 Андрій Дмитрович Хворостяний Напівпровідниковий термоелектричний генератор
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件
CN112420859B (zh) * 2020-11-18 2022-05-13 上海科技大学 850nm波段吸收区部分耗尽光电探测器及其制备方法
CN114520270B (zh) * 2020-11-20 2024-07-05 苏州华太电子技术股份有限公司 一种间接带隙半导体光电探测器件及其制作方法
CN114864730B (zh) * 2021-02-04 2024-12-27 迈络思科技有限公司 高调制速度pin型光电二极管
US12278304B2 (en) 2021-02-04 2025-04-15 Mellanox Technologies, Ltd. High modulation speed PIN-type photodiode
US20230299223A1 (en) * 2022-03-16 2023-09-21 Sensors Unlimited, Inc. Photodiode structures
US20230375729A1 (en) * 2022-05-20 2023-11-23 Redlen Technologies, Inc. Radiation detector having asymmetric contacts
WO2025238716A1 (ja) * 2024-05-14 2025-11-20 Ｎｔｔ株式会社 受光素子
CN118825104A (zh) * 2024-06-21 2024-10-22 中国电子科技集团公司第十一研究所 一种高性能铟镓砷红外探测器结构
CN119947336A (zh) * 2025-01-20 2025-05-06 隆基绿能科技股份有限公司 一种太阳能电池片以及光伏组件

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GB2256746B (en) * 1991-06-12 1995-05-03 Marconi Gec Ltd Semiconductor devices
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5818096A (en) 1996-04-05 1998-10-06 Nippon Telegraph And Telephone Corp. Pin photodiode with improved frequency response and saturation output
JP2000223736A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 金属−半導体−金属型受光素子
US7202102B2 (en) 2001-11-27 2007-04-10 Jds Uniphase Corporation Doped absorption for enhanced responsivity for high speed photodiodes
JP2003174185A (ja) * 2001-12-05 2003-06-20 Fujitsu Ltd 半導体受光素子
CA2474556C (en) 2002-02-01 2014-10-07 Picometrix, Inc. Enhanced photodetector
JP4030847B2 (ja) * 2002-09-20 2008-01-09 ユーディナデバイス株式会社 半導体受光装置
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
JP2006229156A (ja) * 2005-02-21 2006-08-31 Ntt Electornics Corp フォトダイオード
KR101362688B1 (ko) * 2007-04-13 2014-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US8895839B2 (en) * 2008-02-01 2014-11-25 President And Fellows Of Harvard College Multijunction photovoltaic device
JP2011176094A (ja) * 2010-02-24 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> フォトダイオード
JP2011258809A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体受光素子
JP2012124404A (ja) * 2010-12-10 2012-06-28 Nippon Telegr & Teleph Corp <Ntt> フォトダイオードおよびその製造方法
TWI412149B (zh) * 2010-12-16 2013-10-11 Univ Nat Central Laser energy conversion device
JP2012146806A (ja) * 2011-01-12 2012-08-02 Irspec Corp 格子不整合赤外化合物半導体受光素子

Also Published As

Publication number Publication date
US9882080B2 (en) 2018-01-30
US20160172523A1 (en) 2016-06-16
CN105283964B (zh) 2018-04-13
TW201507187A (zh) 2015-02-16
TWI620339B (zh) 2018-04-01
CN105283964A (zh) 2016-01-27
JP2016522578A (ja) 2016-07-28
EP2808908A1 (en) 2014-12-03
EP2808908B1 (en) 2023-04-19
WO2014191275A1 (en) 2014-12-04
SG11201508462PA (en) 2015-11-27

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