JP2013093543A5 - - Google Patents

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Publication number
JP2013093543A5
JP2013093543A5 JP2012107481A JP2012107481A JP2013093543A5 JP 2013093543 A5 JP2013093543 A5 JP 2013093543A5 JP 2012107481 A JP2012107481 A JP 2012107481A JP 2012107481 A JP2012107481 A JP 2012107481A JP 2013093543 A5 JP2013093543 A5 JP 2013093543A5
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JP
Japan
Prior art keywords
semiconductor layer
silicon semiconductor
type
silicon
electrode
Prior art date
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Application number
JP2012107481A
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English (en)
Japanese (ja)
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JP5927027B2 (ja
JP2013093543A (ja
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Priority to JP2012107481A priority Critical patent/JP5927027B2/ja
Priority claimed from JP2012107481A external-priority patent/JP5927027B2/ja
Priority to US13/628,458 priority patent/US8987738B2/en
Priority to CN201210367388.XA priority patent/CN103035753B/zh
Publication of JP2013093543A publication Critical patent/JP2013093543A/ja
Priority to US14/627,298 priority patent/US9761749B2/en
Publication of JP2013093543A5 publication Critical patent/JP2013093543A5/ja
Application granted granted Critical
Publication of JP5927027B2 publication Critical patent/JP5927027B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012107481A 2011-10-05 2012-05-09 光電変換装置 Expired - Fee Related JP5927027B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012107481A JP5927027B2 (ja) 2011-10-05 2012-05-09 光電変換装置
US13/628,458 US8987738B2 (en) 2011-10-05 2012-09-27 Photoelectric conversion device
CN201210367388.XA CN103035753B (zh) 2011-10-05 2012-09-28 光电转换装置
US14/627,298 US9761749B2 (en) 2011-10-05 2015-02-20 Photoelectric conversion device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011221164 2011-10-05
JP2011221164 2011-10-05
JP2012107481A JP5927027B2 (ja) 2011-10-05 2012-05-09 光電変換装置

Publications (3)

Publication Number Publication Date
JP2013093543A JP2013093543A (ja) 2013-05-16
JP2013093543A5 true JP2013093543A5 (enExample) 2015-05-14
JP5927027B2 JP5927027B2 (ja) 2016-05-25

Family

ID=48022451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012107481A Expired - Fee Related JP5927027B2 (ja) 2011-10-05 2012-05-09 光電変換装置

Country Status (3)

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US (2) US8987738B2 (enExample)
JP (1) JP5927027B2 (enExample)
CN (1) CN103035753B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5917082B2 (ja) 2011-10-20 2016-05-11 株式会社半導体エネルギー研究所 光電変換装置の作製方法
WO2013069324A1 (ja) * 2011-11-10 2013-05-16 三菱電機株式会社 太陽電池およびその製造方法、太陽電池モジュール
TWI517430B (zh) * 2013-12-31 2016-01-11 東旭能興業有限公司 太陽能電池單元及其製造方法
JP6576025B2 (ja) * 2014-09-29 2019-09-18 キヤノン株式会社 光電変換装置、及び撮像システム
CN106601860A (zh) * 2015-10-14 2017-04-26 福建金石能源有限公司 一种硅基异质结电池的制备方法
US11735678B2 (en) * 2019-03-29 2023-08-22 Maxeon Solar Pte. Ltd. Solar cells having hybrid architectures including differentiated p-type and n-type regions with offset contacts
CN112054094A (zh) * 2020-09-08 2020-12-08 中国科学院苏州纳米技术与纳米仿生研究所 一种太阳能电池及其制作方法
CN119008712A (zh) 2023-10-13 2024-11-22 浙江晶科能源有限公司 太阳能电池及光伏组件
CN119008711A (zh) * 2023-10-13 2024-11-22 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPH0795603B2 (ja) 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
JP3158027B2 (ja) * 1995-06-21 2001-04-23 シャープ株式会社 太陽電池及びその製造方法
JP3349308B2 (ja) * 1995-10-26 2002-11-25 三洋電機株式会社 光起電力素子
JP3469729B2 (ja) 1996-10-31 2003-11-25 三洋電機株式会社 太陽電池素子
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
JP3557148B2 (ja) 2000-02-21 2004-08-25 三洋電機株式会社 太陽電池モジュール
US20030178057A1 (en) * 2001-10-24 2003-09-25 Shuichi Fujii Solar cell, manufacturing method thereof and electrode material
JP3902534B2 (ja) 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
JP2004235274A (ja) * 2003-01-28 2004-08-19 Kyocera Corp 多結晶シリコン基板およびその粗面化法
JP4959127B2 (ja) 2004-10-29 2012-06-20 三菱重工業株式会社 光電変換装置及び光電変換装置用基板
EP1950813A4 (en) * 2005-11-17 2010-07-21 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELL AND MANUFACTURING METHOD THEREFOR
WO2008078471A1 (ja) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha 光電変換装置及びその製造方法
US8809203B2 (en) * 2007-06-05 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using a microwave plasma CVD apparatus
US8410355B2 (en) * 2007-11-02 2013-04-02 Kaneka Corporation Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer
KR101293162B1 (ko) * 2007-11-09 2013-08-12 선프림, 리미티드 저-비용 태양 전지 및 그 제조 방법
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8129212B2 (en) * 2008-03-25 2012-03-06 Applied Materials, Inc. Surface cleaning and texturing process for crystalline solar cells
AU2009246864A1 (en) * 2008-05-16 2009-11-19 Emcore Corporation Solar systems that include one or more shade-tolerant wiring schemes
US20100269896A1 (en) * 2008-09-11 2010-10-28 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
WO2010032933A2 (en) * 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
KR101539047B1 (ko) * 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
EP2416373B1 (en) 2009-03-30 2019-12-25 Panasonic Intellectual Property Management Co., Ltd. Solar cell
CN101924145B (zh) * 2009-06-12 2013-01-23 大同大学 光电转换装置及其制法
WO2011001842A1 (en) 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US20110041910A1 (en) * 2009-08-18 2011-02-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR101139443B1 (ko) 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
KR20110043147A (ko) 2009-10-21 2011-04-27 주성엔지니어링(주) 이종 접합 태양전지 및 그 제조방법
JP4940290B2 (ja) * 2009-12-15 2012-05-30 三洋電機株式会社 光電変換装置及びその製造方法
CN103119727B (zh) * 2010-10-01 2016-09-28 株式会社钟化 光电转换装置的制造方法
US8815635B2 (en) * 2010-11-05 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of photoelectric conversion device
US20120211065A1 (en) 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US20120273036A1 (en) * 2011-04-29 2012-11-01 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9012769B2 (en) 2011-05-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US9159939B2 (en) * 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置

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