JP2013516751A5 - - Google Patents

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Publication number
JP2013516751A5
JP2013516751A5 JP2012546427A JP2012546427A JP2013516751A5 JP 2013516751 A5 JP2013516751 A5 JP 2013516751A5 JP 2012546427 A JP2012546427 A JP 2012546427A JP 2012546427 A JP2012546427 A JP 2012546427A JP 2013516751 A5 JP2013516751 A5 JP 2013516751A5
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JP
Japan
Prior art keywords
doping
semiconductor chip
type conductive
multilayer structure
chip according
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JP2012546427A
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English (en)
Japanese (ja)
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JP5735984B2 (ja
JP2013516751A (ja
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Priority claimed from DE102009060747.1A external-priority patent/DE102009060747B4/de
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Publication of JP2013516751A5 publication Critical patent/JP2013516751A5/ja
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Publication of JP5735984B2 publication Critical patent/JP5735984B2/ja
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JP2012546427A 2009-12-30 2010-12-27 発光半導体チップ Active JP5735984B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
DE102009060747.1 2009-12-30
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip

Publications (3)

Publication Number Publication Date
JP2013516751A JP2013516751A (ja) 2013-05-13
JP2013516751A5 true JP2013516751A5 (enExample) 2014-02-20
JP5735984B2 JP5735984B2 (ja) 2015-06-17

Family

ID=43827573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012546427A Active JP5735984B2 (ja) 2009-12-30 2010-12-27 発光半導体チップ

Country Status (8)

Country Link
US (4) US9012885B2 (enExample)
EP (1) EP2519980B1 (enExample)
JP (1) JP5735984B2 (enExample)
KR (3) KR20180078359A (enExample)
CN (2) CN106229395B (enExample)
DE (1) DE102009060747B4 (enExample)
TW (1) TWI449212B (enExample)
WO (1) WO2011080249A1 (enExample)

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DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
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DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
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DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102013104272A1 (de) 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104701431B (zh) * 2014-11-27 2017-03-29 厦门市三安光电科技有限公司 一种发光二极管的外延结构及其制作方法
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
CN109952659B (zh) * 2016-07-28 2022-03-11 亮锐有限责任公司 具有超晶格的ⅲ-p发光器件
DE102016120419A1 (de) * 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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