JP2010040838A5 - - Google Patents

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Publication number
JP2010040838A5
JP2010040838A5 JP2008203039A JP2008203039A JP2010040838A5 JP 2010040838 A5 JP2010040838 A5 JP 2010040838A5 JP 2008203039 A JP2008203039 A JP 2008203039A JP 2008203039 A JP2008203039 A JP 2008203039A JP 2010040838 A5 JP2010040838 A5 JP 2010040838A5
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
emitting device
conductivity type
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008203039A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010040838A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008203039A priority Critical patent/JP2010040838A/ja
Priority claimed from JP2008203039A external-priority patent/JP2010040838A/ja
Priority to US12/472,447 priority patent/US8080818B2/en
Priority to EP09164901.2A priority patent/EP2151874A3/en
Publication of JP2010040838A publication Critical patent/JP2010040838A/ja
Publication of JP2010040838A5 publication Critical patent/JP2010040838A5/ja
Priority to US13/291,176 priority patent/US8410473B2/en
Pending legal-status Critical Current

Links

JP2008203039A 2008-08-06 2008-08-06 発光装置 Pending JP2010040838A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008203039A JP2010040838A (ja) 2008-08-06 2008-08-06 発光装置
US12/472,447 US8080818B2 (en) 2008-08-06 2009-05-27 Light emitting device
EP09164901.2A EP2151874A3 (en) 2008-08-06 2009-07-08 Light emitting device
US13/291,176 US8410473B2 (en) 2008-08-06 2011-11-08 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008203039A JP2010040838A (ja) 2008-08-06 2008-08-06 発光装置

Publications (2)

Publication Number Publication Date
JP2010040838A JP2010040838A (ja) 2010-02-18
JP2010040838A5 true JP2010040838A5 (enExample) 2010-09-02

Family

ID=41381619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008203039A Pending JP2010040838A (ja) 2008-08-06 2008-08-06 発光装置

Country Status (3)

Country Link
US (2) US8080818B2 (enExample)
EP (1) EP2151874A3 (enExample)
JP (1) JP2010040838A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100993085B1 (ko) * 2009-12-07 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 라이트 유닛
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
US9099593B2 (en) * 2012-09-14 2015-08-04 Tsmc Solid State Lighting Ltd. III-V group compound devices with improved efficiency and droop rate
JP6183060B2 (ja) * 2013-08-24 2017-08-23 日亜化学工業株式会社 半導体発光素子
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
CN105962613A (zh) * 2016-07-12 2016-09-28 南京际华三五二特种装备有限公司 一种拆卸活动式携行背装具
US11929592B2 (en) * 2020-09-17 2024-03-12 Marvell Asia Pte Ltd. Silicon-photonics-based semiconductor optical amplifier with N-doped active layer
WO2022174892A1 (en) * 2021-02-17 2022-08-25 Ams-Osram International Gmbh V-pit-enhanced component having improved charge carrier distribution

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785167B2 (ja) * 1992-06-29 1998-08-13 国際電信電話株式会社 多重量子井戸構造および多重量子井戸構造を用いた半導体素子
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
JPH118406A (ja) 1997-06-18 1999-01-12 Daido Steel Co Ltd 面発光素子
JP3438648B2 (ja) * 1999-05-17 2003-08-18 松下電器産業株式会社 窒化物半導体素子
US6803596B2 (en) * 1999-12-27 2004-10-12 Sanyo Electric Co., Ltd. Light emitting device
JP2003289156A (ja) * 2002-03-28 2003-10-10 Stanley Electric Co Ltd 窒化ガリウム系半導体結晶の成長方法及び化合物半導体発光素子
JP2006324685A (ja) * 2002-07-08 2006-11-30 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子
JP2006013462A (ja) 2004-05-21 2006-01-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2006013463A (ja) 2004-05-21 2006-01-12 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP4971822B2 (ja) 2007-02-19 2012-07-11 三洋電機株式会社 ナビゲーション装置

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