WO2012089003A1 - 具有复合式双电流扩展层的氮化物发光二极管 - Google Patents

具有复合式双电流扩展层的氮化物发光二极管 Download PDF

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WO2012089003A1
WO2012089003A1 PCT/CN2011/083620 CN2011083620W WO2012089003A1 WO 2012089003 A1 WO2012089003 A1 WO 2012089003A1 CN 2011083620 W CN2011083620 W CN 2011083620W WO 2012089003 A1 WO2012089003 A1 WO 2012089003A1
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layer
current spreading
spreading layer
light emitting
nitride semiconductor
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PCT/CN2011/083620
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English (en)
French (fr)
Inventor
叶孟欣
吴志强
黄少华
周启伦
吕兴维
林科闯
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厦门市三安光电科技有限公司
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Publication of WO2012089003A1 publication Critical patent/WO2012089003A1/zh
Priority to US13/551,636 priority Critical patent/US8860044B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Definitions

  • Nitride light emitting diode with composite dual current spreading layer Nitride light emitting diode with composite dual current spreading layer
  • the present invention relates to a nitride semiconductor light-emitting device, and more particularly to a nitride light-emitting diode having a compound current spreading layer. Background technique
  • the buffer layer 101, the n-type nitride semiconductor layer 102, the light-emitting layer 104, the p-type confinement layer 105, p are epitaxially grown on the sapphire substrate 100 in this order.
  • the type nitride semiconductor layer 106 forms a p-type contact layer 107 on the p-type nitride semiconductor layer 106, and a p-electrode 108 and an n-electrode 109 are formed on the p-type contact layer 107 and the n-type nitride semiconductor layer 102, respectively.
  • the electrode flows from the n-electrode 109 to the p-electrode 108, it will be biased toward a closer line, which will cause some portions of the current density to be too large, resulting in current crowding, thereby limiting the effective improvement of the light effect level.
  • the present invention provides a nitride light-emitting diode having a composite dual current spreading layer.
  • a nitride light emitting diode having a composite dual current spreading layer comprising:
  • n-side layer and a p-side layer respectively formed of nitride semiconductors; a light-emitting layer composed of a nitride semiconductor between the n-side layer and the p-side layer;
  • the n-side layer is formed by laminating a buffer layer, an n-type nitride semiconductor layer and a composite dual current spreading layer in sequence;
  • the composite dual current spreading layer is a composite semiconductor in which a first current spreading layer and a second current spreading layer are sequentially laminated.
  • a first current spreading layer formed on a distributed insulating layer of the n-type nitride semiconductor layer, wherein the second current spreading layer is formed by alternately laminating a u-type nitride semiconductor layer and an n-type nitride semiconductor layer;
  • the dual current spreading layers are respectively connected to the n-type nitride semiconductor layer and the active layer.
  • the above-mentioned distributed insulating layer is composed of insulating portions spaced at predetermined intervals.
  • the above-mentioned buried insulating layer is formed by an ion implantation method.
  • a gradual silicon-type n-type nitride semiconductor layer is further included between the first current spreading layer and the second current spreading layer.
  • the composite dual current spreading layer has a film thickness of 1000 ⁇ to 20,000 ⁇ .
  • the first current spreading layer has a film thickness of 100 angstroms to 5000 angstroms.
  • the tapered silicon-type n-type nitride semiconductor layer has a film thickness of 200 angstroms to 5000 angstroms.
  • the tapered silicon-type n-type nitride semiconductor layer is formed by secondary growth epitaxy, wherein the silicon concentration is changed from 1 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm”
  • the gradual silicon-doped n-type nitride semiconductor layer is formed by secondary growth epitaxy, wherein the silicon dopant concentration is changed from 5 10 18 cm" to 1 X 10 18 cm- 3 .
  • the second current spreading layer has a film thickness of 700 angstroms to 10,000 angstroms, wherein a thickness ratio of the u-type nitride semiconductor layer to the n -type nitride semiconductor layer is >0.8, and the number of lamination cycles is 1 to 20.
  • the second current spreading layer has a film thickness of 1800 ⁇ to 3600 ⁇ , and the u-type nitride semiconductor layer and the n-type nitride semiconductor layer have a film thickness ratio of 5:1 and a number of lamination cycles of 3.
  • the u-type nitride semiconductor layer has a silicon holding concentration of less than 5 10 17 cm -3
  • the n-type nitride semiconductor layer has a silicon holding concentration of more than 1 x 10 18 cm -3 .
  • the "u-type nitride semiconductor" as referred to in the present invention means a low-doped nitride semiconductor having a doping concentration of less than 5 x 10 17 cm - 3 .
  • the first current spreading layer in the composite dual current spreading layer forms a distributed insulating layer in the n-type nitride semiconductor layer to force a current to be uniformly distributed, forming a point current source with a distributed distribution ( Referring to FIG. 3 or FIG. 5); the second current spreading layer is designed by alternately laminating a u-type nitride semiconductor layer and an n-type nitride semiconductor layer, the purpose of which is to form a uniformity of the first current spreading layer.
  • the distributed point current source by the interactive lamination of the u-type layer and the n-type layer, forces the point current sources everywhere to be two-dimensionally horizontally expanded, so that the current spreads evenly to the entire light-emitting area, which is more conventional than the conventional one.
  • the currentless expansion layer or single current expansion design is more capable of current spreading without current crowding.
  • a gradual silicon-doped n-type layer is added to the first current spreading layer and the second current spreading layer, the purpose of which is to repair the first current spreading layer due to the formation of the distribution by the gradual silicon-doped n-type nitride semiconductor layer
  • the insulating layer causes surface defects, thereby maintaining the lattice quality of the nitride semiconductor layer after the secondary epitaxy, and serves as a current guiding layer of the second current spreading layer.
  • the invention has the beneficial effects that the composite double current expansion layer provided by the nitride light-emitting diode can distribute the current to the entire light-emitting area in a very uniform manner, thereby avoiding current crowding, thereby effectively improving the light-emitting of the nitride light-emitting diode assembly. Efficiency, and increase the electrostatic breakdown voltage.
  • FIG. 1 is a structural diagram of a general nitride light emitting diode and a schematic diagram of a current path thereof.
  • Figure 2 is a schematic cross-sectional view showing a nitride light emitting diode module of Embodiment 1 of the present invention.
  • Fig. 3 is a view showing the current expansion of the nitride light emitting diode module of Embodiment 1 of the present invention.
  • Figure 4 is a schematic cross-sectional view showing a nitride light emitting diode device of Embodiment 2 of the present invention.
  • Fig. 5 is a view showing the current expansion of the nitride light emitting diode module of Embodiment 2 of the present invention.
  • Fig. 6 is a graph showing the luminous output power of the second embodiment of the present invention.
  • Fig. 7 is a graph showing the rate of passage of an electrostatic breakdown voltage in Example 2 of the present invention.
  • Fig. 2 is a schematic cross-sectional view showing the structure of a nitride light emitting diode assembly (LED assembly) according to Embodiment 1 of the present invention.
  • the nitride light emitting diode module of the present embodiment has a structure in which the following layers are sequentially laminated on the sapphire substrate 100:
  • a buffer layer 101 made of gallium nitride (GaN), aluminum nitride (A1N) or gallium aluminum nitride (GaAIN) having a film thickness of 200 ⁇ to 500 ⁇ .
  • the n-type nitride semiconductor layer 102 made of Si-doped GaN has a film thickness of 20,000 ⁇ to 40,000 ⁇ .
  • a composite dual current spreading layer 103 composed of a first current spreading layer and a second current spreading layer, which have a film thickness of 1000 ⁇ to 20,000 ⁇ .
  • the first current spreading layer 103a is a distributed insulating layer formed in the n-type nitride semiconductor layer 102 by ion implantation, and is composed of insulating portions separated by a predetermined interval;
  • the second current spreading layer 103c is made of an undoped u-type nitride
  • the semiconductor layer and the n-type nitride semiconductor layer are alternately laminated, wherein the u-type nitride semiconductor layer has a silicon concentration of 5 x 10 16 cm- 3 , and the n-type nitride semiconductor layer has a silicon concentration of lx l0 19 cm. - 3 , the film thickness ratio of the u-type nitride semiconductor layer and the n-type nitride semiconductor layer is 5:1, and the number of lamination cycles is 3.
  • the "u-type nitride semiconductor" as referred to in the present invention refers to a low-doped nitride semiconductor having a doping concentration of less than 5 x 10 17 cm - 3 .
  • a p-type confinement layer 105 composed of Mg-infused aluminum indium gallium nitride (AlInGaN) having a film thickness of 100 ⁇ to 600 ⁇ .
  • a p-type layer 106 composed of one of gallium nitride (GaN:), indium gallium nitride (InGaN) or gallium nitride, and a p-type contact layer 107; wherein the p-type layer 106 has a film thickness of 1000 ⁇ Between ⁇ 3000 angstroms, the p-type contact layer 107 has a film thickness of 50 angstroms to 200 angstroms.
  • electrodes on the p-side and the n-side were formed as follows, thereby constituting a nitride light-emitting diode assembly.
  • the portion of the p-type contact layer 107 to the n-type nitride semiconductor layer 102 is removed by etching in the corner portion of the module, and a part of the n-type nitride semiconductor layer 102 is exposed, and the n-ohmic electrode 109 is formed in the exposed n-type.
  • the nitride semiconductor layer 102 On the nitride semiconductor layer 102.
  • a p-ohmic electrode 108 is formed on almost the entire surface of the p-type contact layer 107, and a p-pad electrode 110 is formed on a portion of the p-ohmic electrode 108.
  • the first current spreading layer 103a of the composite dual current spreading layer 103 is designed to form a distributed insulating layer in the n-type nitride semiconductor layer by ion implantation to force a uniform distribution of current.
  • Forming a uniformly distributed point current source (refer to FIG. 3); the second current spreading layer 103c in the composite dual current spreading layer 103 is designed to alternately laminate the u-type nitride semiconductor layer and the n-type nitride semiconductor layer The purpose is to uniformly distribute the point current source formed by the first current spreading layer 103a, and alternately stack the u-type layer and the n-type layer to force the point current sources everywhere to perform two-dimensional horizontal expansion.
  • the current is spread evenly to the entire light-emitting area, which is more capable of current spreading than the conventional conventional currentless expansion layer or single current expansion design.
  • the shape, size, and distribution density of the first current spreading layer insulating layer are matched with the film thickness ratio of the second current spreading layer u-type layer and the n-type layer, and the number of lamination cycles. For example: the first current spreading layer insulating layer has a high distribution density, and the required second current spreading layer stacking period is small; on the contrary, when the first current spreading layer insulating layer has a low distribution density, the second current expanding laminated layer is required.
  • 3 and 1 are schematic diagrams showing current paths of a nitride light-emitting diode assembly having a composite dual current spreading layer according to an embodiment of the present invention, respectively.
  • Example 2 Fig. 4 is a schematic cross-sectional view showing the structure of a nitride light emitting diode device according to a second embodiment of the present invention.
  • the composite dual current spreading layer has a gradual silicon doped n-type layer 103b added between the first current spreading layer and the second current spreading layer, and the film thickness thereof is 200 angstroms to 5000 angstroms.
  • the tapered silicon-doped n-type layer 103b is designed to have a silicon doping concentration from a low doping of 1 ⁇ 10 17 cm ⁇ 3 to a high doped 1 ⁇ 10 19 ⁇ 3 n-type nitride semiconductor layer, which is performed by secondary epitaxy
  • the purpose is to repair the first current spreading layer which improves surface defects caused by ion implantation by using a graded silicon doped n-type nitride semiconductor layer, thereby maintaining the lattice quality of the nitride semiconductor layer after secondary epitaxy And can be used as the current guiding layer of the second current spreading layer.
  • the process of the present invention and the conventional process ie, In the composite double current expansion layer without the inventive process, two kinds of samples were prepared, and the luminous output power and electrostatic breakdown voltage characteristics were evaluated.
  • the film thickness of each semiconductor layer was set as shown in Table 1.
  • FIGS 6 and 7 show the results of its evaluation.
  • the luminescence output power of the nitride light emitting diode module sample is about 20% higher than that of the conventional nitride light emitting diode module sample.
  • the electrostatic breakdown voltage pass rate of the sample of the nitride light-emitting diode module of the present invention is higher than that of the conventional nitride light-emitting diode module sample, as shown in Fig. 7.

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Description

具有复合式双电流扩展层的氮化物发光二极管
本申请要求于 2010 年 12 月 31 日提交中国专利局、 申请号为 201010616969.3、 发明名称为"具有复合式双电流扩展层的氮化物发光二极管" 的中国专利申请的优先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明涉及一种氮化物半导体发光器件，更为具体的是一种具有复合式双 电流扩展层 ( Compound current spreading layer ) 的氮化物发光二极管。 背景技术
近年来，以氮化物半导体材料为代表的半导体照明技术的发展引起全世界 范围内的广泛关注。 随着外延和芯片工艺技术的不断改进， 氮化物发光二极管 的发光效率得到不断提升。 然而， 要真正意义上普及半导体照明， 仍然需要在 现有的光效水平上继续提高。
如图 1为一般氮化物发光二极管的结构图及其电流路径示意图，在蓝宝石 衬底 100上依次外延生长緩沖层 101、 n型氮化物半导体层 102、 发光层 104、 p型限制层 105、 p型氮化物半导体层 106,在 p型氮化物半导体层 106上形成 p型接触层 107, 分别在 p型接触层 107和 n型氮化物半导体层 102上形成 p 电极 108和 n电极 109。 因为电极从 n电极 109流向 p电极 108会偏向较近的 线路， 这样就会造成有些部分电流密度过大， 导致电流拥挤现象 （current crowding ), 从而限制光效水平的有效提高。 发明内容
为解决上述发光二极管中所存在的问题，有效提高发光效率， 本发明提供 了一种具有复合式双电流扩展层的氮化物发光二极管。
本发明解决上述问题采用的技术方案是：具有复合式双电流扩展层的氮化 物发光二极管， 包含：
蓝宝石 ^十底；
由氮化物半导体分别形成的 n侧层和 p侧层； 在 n侧层和 p侧层之间具有由氮化物半导体构成的发光层；
n侧层由緩沖层、 n型氮化物半导体层及复合式双电流扩展层依次层叠构 成； 复合式双电流扩展层是由第一电流扩展层、第二电流扩展层依次层叠构成 的复合式半导体层；所述第一电流扩展层形成于 n型氮化物半导体层的分布绝 缘层，所述第二电流扩展层由 u型氮化物半导体层和 n型氮化物半导体层交互 叠层而成； 复合式双电流扩展层分别与 n型氮化物半导体层及活性层连接。
优选地， 上述分布绝缘层由以预定间隔隔开的绝缘部组成。
优选地， 上述公布绝缘层通过离子注入法形成。
优选地，在第一电流扩展层与第二电流扩展层之间还包括一渐变式硅捧杂 n型氮化物半导体层。
优选地， 上述复合式双电流扩展层膜厚为 1000埃〜 20000埃。
优选地， 上述第一电流扩展层膜厚为 100埃〜 5000埃。
优选地， 上述渐变式硅捧杂 n型氮化物半导体层膜厚为 200埃 ~ 5000埃。 优选地， 上述渐变式硅捧杂 n型氮化物半导体层由二次成长外延所形成， 其中硅捧杂浓度由 1 X 1017cm-3渐变至 5 x 1019cm"„
优选地， 上述渐变式硅捧杂 n型氮化物半导体层由二次生长外延所形成， 其中硅捧杂浓度由 5 1018cm" 渐变至 1 X 1018cm-3。
优选地， 上述第二电流扩展层膜厚为 700埃 ~ 10000埃， 其中 u型氮化物 半导体层与 n型氮化物半导体层的膜厚比 > 0.8, 叠层周期数为 1至 20。
优选地， 上述第二电流扩展层膜厚为 1800埃〜 3600埃， u型氮化物半导 体层和 n型氮化物半导体层的膜厚比为 5: 1 , 叠层周期数为 3。
优选地， 上述第二电流扩展层中， u型氮化物半导体层硅捧杂浓度小于 5 1017cm—3 , n型氮化物半导体层硅捧杂浓度大于 1 x 1018cm—3。
本发明中所提 "u型氮化物半导体" 均指低掺杂氮化物半导体， 其掺杂浓 度小于 5 x 1017cm-3。
在本发明中， 复合式双电流扩展层中的第一电流扩展层，在 n型氮化物半 导体层形成分布绝缘层可强迫电流均勾分布（ distribution), 形成分布均勾的点 状电流源 (参看图 3或图 5); 第二电流扩展层的设计为 u型氮化物半导体层和 n型氮化物半导体层交互叠层而成， 其目的是将第一电流扩展层所形成的均匀 分布点状电流源，借由 u型层和 n型层的交互叠层，将各处的点状电流源强迫 做二维水平扩展，使电流非常均匀扩展至整个发光面积， 比现有一般传统无电 流扩展层或单电流扩展的设计更能达到电流扩展的效果， 而无电流拥挤现象 ( current crowding )。
在第一电流扩展层与第二电流扩展层中加入渐变式硅捧杂 n型层，其目的 是藉由渐变式硅捧杂的 n 型氮化物半导体层来修复第一电流扩展层因形成分 布绝缘层而造成表层缺陷， 进而维持二次外延后氮化物半导体层的晶格质量， 并可作为第二电流扩展层的电流引导层。
本发明的有益效果是：氮化物发光二极管设有的复合式双电流扩展层内能 将电流非常均勾扩展分布至整个发光面积，避免电流拥挤现象， 因而可以有效 提高氮化物发光二极管组件的发光效率， 并且提高静电击穿电压。 附图说明
图 1为一般氮化物发光二极管的结构图及其电流路径示意图。
图 2是本发明实施例 1的氮化物发光二极管组件的模式剖面图。
图 3是本发明实施例 1的氮化物发光二极管组件的电流扩展示意图。 图 4是本发明实施例 2的氮化物发光二极管组件的模式剖面图。
图 5是本发明实施例 2的氮化物发光二极管组件的电流扩展示意图。 图 6是本发明实施例 2的发光输出功率的曲线图。
图 7是本发明实施例 2的静电击穿电压通过率图。
图中：
100 蓝宝石 ^"底
101 緩沖层
102 η 型氮化物半导体层
103 复合式双电流扩展层
103a 第一电流扩展层
103b 渐变式硅捧杂 n型层 103c 第二电流扩展层
104 发光层
105 p型限制层
106 p型层
107 p型接触层
108 p欧姆电极
109 n欧姆电极
110 p焊接区 (pad)电极。 具体实施方式
下面结合附图和实施例对本发明进一步说明。
实施例 1
图 2是本发明实施例 1的氮化物发光二极管组件 (LED组件)的结构的模式 剖面图。本实施方式的氮化物发光二极管组件具有在蓝宝石衬底 100上依次叠 层下述各层的结构：
(1)由氮化镓 (GaN)、 氮化铝 （A1N )或氮化镓铝 （ GaAIN )构成的緩沖层 101 , 其膜厚为 200埃 ~ 500埃。
(2)由 Si掺杂 GaN构成的 n型氮化物半导体层 102, 其膜厚为 20000埃 ~ 40000埃间。
(3)由第一电流扩展层、 第二电流扩展层依次层叠构成的复合式双电流扩 展层 103 , 其膜厚为 1000埃〜 20000埃。 第一电流扩展层 103a为通过离子注 入法在 n型氮化物半导体层 102形成的分布式绝缘层， 由预定间隔隔开的绝缘 部组成； 第二电流扩展层 103c由非掺杂 u型氮化物半导体层和 n型氮化物半导 体层交互叠层而成， 其中 u型氮化物半导体层硅捧杂浓度为 5 x l016cm-3, n型 氮化物半导体层硅捧杂浓度为 l x l019cm- 3 , u型氮化物半导体层和 n型氮化物 半导体层的膜厚比为 5: 1 , 叠层周期数为 3。
需要说明的是， 本发明中所提 "u型氮化物半导体" 均指低掺杂氮化物半 导体， 其掺杂浓度小于 5 x l017cm- 3。 (4)以 InGaN层作为阱层、 GaN层作为势垒层的多量子阱结构的发光层 104; 其中阱层的膜厚为 18埃〜 30埃， 势垒层的膜厚为 80埃〜 200埃。
(5)由捧杂了 Mg的氮化铝铟镓 (AlInGaN)构成的 p型限制层 105 , 其膜厚 为 100埃 ~ 600埃。
(6)由氮化镓 (GaN：)、 氮化铟镓 (InGaN)或氮化镓系之一构成的 p 型层 106 与 p型接触层 107; 其中 p型层 106的膜厚为 1000埃 ~ 3000埃间， p型接触 层 107的膜厚为 50埃 ~ 200埃。
并且按下述方法形成 p侧及 n侧的电极，由此构成氮化物发光二极管组件。 在组件的角部中用刻蚀法从 p型接触层 107到 n型氮化物半导体层 102的部分 除去， 使 n型氮化物半导体层 102的一部分露出， n欧姆电极 109形成在露出 的 n型氮化物半导体层 102上。 此外， 作为 p侧的电极， 在 p型接触层 107 的几乎整个面上形成 p欧姆电极 108、 在该 p欧姆电极 108上的一部分上形成 p焊接区 (pad)电极 110。
在本实施例中，复合式双电流扩展层 103的第一电流扩展层 103a的设计， 其目的是透过离子注入法在 n 型氮化物半导体层形成分布绝缘层可强迫电流 均匀分布 (distribution), 形成分布均匀的点状电流源 (参考图 3); 复合式双电流 扩展层 103中的第二电流扩展层 103c的设计为 u型氮化物半导体层和 n型氮 化物半导体层交互叠层而成， 其目的是将第一电流扩展层 103a所形成的均匀 分布点状电流源， 藉由 u型层和 n型层的交互叠层，将各处的点状电流源强迫 做二维水平扩展，使电流非常均匀扩展至整个发光面积， 比现有一般传统无电 流扩展层或单电流扩展的设计更能达到电流扩展的效果。藉由第一电流扩展层 绝缘层的的形状、大小、分布密度与第二电流扩展层 u型层与 n型层的膜厚比、 叠层周期数做搭配设计。 例如： 第一电流扩展层绝缘层的分布密度高， 所需第 二电流扩展层叠层周期数则少；反之，当第一电流扩展层绝缘层的分布密度低， 则所需第二电流扩展层叠层周期数则多， 使电流非常均匀分布至整个发光面 积， 因此可以有效提高氮化物发光二极管组件的发光效率， 比现有产品增加 10% ~ 20%的亮度， 并且提高静电击穿电压。 图 3和图 1分别是有无本发明实 施方式的复合式双电流扩展层的氮化物发光二极管组件的电流路径示意图。
实施例 2 图 4是本发明实施例 2的氮化物发光二极管组件的结构的模式剖面图。本 实施例与实施例 1的相比，其复合式双电流扩展层为在第一电流扩展层与第二 电流扩展层之间多加入一渐变式硅掺杂 n型层 103b, 其膜厚为 200埃 ~ 5000 埃。 该渐变式硅掺杂 n型层 103b的设计为硅掺杂浓度由低掺 1 X 1017cm-3 渐 变至高掺 1 χ 1019 η·3 的 η型氮化物半导体层， 是由二次外延所形成， 其目的 是藉由渐变式硅掺杂的 η型氮化物半导体层来修复改善因离子注入造成表层 缺陷的第一电流扩展层，进而维持二次外延后氮化物半导体层的晶格质量， 并 可作为第二电流扩展层的电流引导层。
在本实施例中， 为更好地说明本发明相较于传统的发光二极管（即有无本 发明工艺的复合式双电流扩展层)的有益效果， 针对本发明工艺与传统的工艺 (即有无本发明工艺的复合式双电流扩展层)， 制作 2种样品， 分别评价其发光 输出功率与静电击穿电压特性。
实施例中， 按表 1所示那样设定各半导体层的膜厚。
Figure imgf000008_0001
图 6、 图 7示出了它的评价结果。
如图 6所示的本发明实施例的各样品的发光输出功率的曲线图，本发明的 替换页 （细则第 26条) 氮化物发光二极管组件样品的发光输出功率比传统工艺的氮化物发光二极管 组件样品高出 20 %左右。
如图 7所示的本发明实施例的各样品的静电击穿电压通过率图，本发明的 氮化物发光二极管组件样品的静电击穿电压高于传统工艺的氮化物发光二极 管组件样品。
以上实施例仅供说明本发明之用， 而非对本发明的限制， 本技术领域的普 通技术人员，在不脱离本发明的精神和范围的情况下，还可以作出各种变换或 变化； 所有等同的技术方案也应该属于本发明的范畴， 由各权利要求限定。

Claims

权 利 要 求
1. 具有复合式双电流扩展层的氮化物发光二极管， 包含： 蓝宝石 ^十底； 由氮化物半导体分别形成的 n侧层和 p侧层； 在 n侧层和 p侧层之间具有由氮化物半导体构成的发光层； 其特征在于： n侧层由緩沖层、 n型氮化物半导体层及复合式双电流扩 展层依次层叠构成； 复合式双电流扩展层是由第一电流扩展层、第二电流 扩展层依次层叠构成的复合式半导体层； 所述第一电流扩展层是形成于 n 型氮化物半导体层的分布绝缘层，所述第二电流扩展层由 u型氮化物半导 体层和 n型氮化物半导体层交互叠层而成； 复合式双电流扩展层分别与 n 型氮化物半导体层及活性层连接。
2. 根据权利要求 1所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于： 所述分布绝缘层由以预定间隔隔开的绝缘部组成。
3. 根据权利要求 2所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于： 所述分布绝缘层通过离子注入法形成。
4. 根据权利要求 1所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于：在第一电流扩展层与第二电流扩展层之间还包括一渐变式硅 掺杂 n型氮化物半导体层。
5. 根据权利要求 4所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征是： 所述复合式双电流扩展层膜厚为 1000埃〜 20000埃。
6. 根据权利要求 1所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于： 第一电流扩展层膜厚为 100埃〜 5000埃。
7. 根据权利要求 4所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于：所述渐变式硅捧杂 n型氮化物半导体层膜厚为 200埃 ~ 5000 埃。
8. 根据权利要求 4所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于： 所述渐变式硅捧杂 n型氮化物半导体层由二次成长外延所形 成， 其中硅捧杂浓度由 1 X 1017cm-3渐变至 5 X 1019cm"„
9. 根据权利要求 4所述的具有复合式双电流扩展层的氮化物发光二极管， 其特征在于： 所述渐变式硅捧杂 n型氮化物半导体层由二次生长外延所形 成， 其中硅捧杂浓度由 5 X 1018cm" 渐变至 1 X 1018cm-3。
10. 根据权利要求 1或 2或 3或 4所述的具有复合式双电流扩展层的氮化 物发光二极管， 其特征在于： 第二电流扩展层膜厚为 700埃〜 10000埃， 其中 u型氮化物半导体层与 n型氮化物半导体层的膜厚比 > 0.8, 叠层周 期数为 1至 20。
11.根据权利要求 10所述的具有复合式双电流扩展层的氮化物发光二极 管， 其特征在于： 第二电流扩展层膜厚为 1800埃〜 3600埃， u型氮化物 半导体层和 n型氮化物半导体层的膜厚比为 5: 1 , 叠层周期数为 3。
12. 根据权利要求 1或 2或 3或 4所述的具有复合式双电流扩展层的氮化 物发光二极管， 其特征在于： 所述第二电流扩展层中， u型氮化物半导体 层硅捧杂浓度小于 5 X 1017cm-3 , n型氮化物半导体层硅捧杂浓度大于 1 x 1018cm—3。
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