JP2003101154A5 - - Google Patents

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Publication number
JP2003101154A5
JP2003101154A5 JP2002260153A JP2002260153A JP2003101154A5 JP 2003101154 A5 JP2003101154 A5 JP 2003101154A5 JP 2002260153 A JP2002260153 A JP 2002260153A JP 2002260153 A JP2002260153 A JP 2002260153A JP 2003101154 A5 JP2003101154 A5 JP 2003101154A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
semiconductor device
superlattice
Prior art date
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Application number
JP2002260153A
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English (en)
Japanese (ja)
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JP2003101154A (ja
JP4438274B2 (ja
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Publication date
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Priority to JP2002260153A priority Critical patent/JP4438274B2/ja
Priority claimed from JP2002260153A external-priority patent/JP4438274B2/ja
Publication of JP2003101154A publication Critical patent/JP2003101154A/ja
Publication of JP2003101154A5 publication Critical patent/JP2003101154A5/ja
Application granted granted Critical
Publication of JP4438274B2 publication Critical patent/JP4438274B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002260153A 1997-05-26 2002-09-05 窒化物半導体素子 Expired - Fee Related JP4438274B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002260153A JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP13421097 1997-05-26
JP9-134210 1997-05-26
JP9-244342 1997-09-09
JP24434297 1997-09-09
JP9-274438 1997-10-07
JP27443897 1997-10-07
JP2002260153A JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP31127297A Division JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008283153A Division JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003101154A JP2003101154A (ja) 2003-04-04
JP2003101154A5 true JP2003101154A5 (enExample) 2005-07-07
JP4438274B2 JP4438274B2 (ja) 2010-03-24

Family

ID=40398642

Family Applications (3)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Country Status (1)

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JP (3) JP3478090B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6838705B1 (en) 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP2004055855A (ja) 2002-07-19 2004-02-19 Toyoda Gosei Co Ltd 通信装置
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
JP2006344689A (ja) 2005-06-07 2006-12-21 Rohm Co Ltd 半導体素子
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2007142198A (ja) 2005-11-18 2007-06-07 Rohm Co Ltd 半導体レーザ及び半導体レーザ製造方法
JP2008311579A (ja) 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
KR101007086B1 (ko) 2008-09-02 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011091289A (ja) * 2009-10-26 2011-05-06 Sony Corp 半導体素子の製造方法および半導体素子
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US8860077B2 (en) 2010-02-12 2014-10-14 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
JP2013098232A (ja) * 2011-10-28 2013-05-20 Sharp Corp 窒化物半導体レーザ素子
JP2014192475A (ja) * 2013-03-28 2014-10-06 Japan Oclaro Inc 窒化物光半導体素子及び光半導体装置
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置
JP7333504B2 (ja) 2020-11-16 2023-08-25 日亜化学工業株式会社 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband

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