JP2009027201A5 - - Google Patents

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Publication number
JP2009027201A5
JP2009027201A5 JP2008283153A JP2008283153A JP2009027201A5 JP 2009027201 A5 JP2009027201 A5 JP 2009027201A5 JP 2008283153 A JP2008283153 A JP 2008283153A JP 2008283153 A JP2008283153 A JP 2008283153A JP 2009027201 A5 JP2009027201 A5 JP 2009027201A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor device
semiconductor layer
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008283153A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009027201A (ja
JP4947035B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008283153A priority Critical patent/JP4947035B2/ja
Priority claimed from JP2008283153A external-priority patent/JP4947035B2/ja
Publication of JP2009027201A publication Critical patent/JP2009027201A/ja
Publication of JP2009027201A5 publication Critical patent/JP2009027201A5/ja
Application granted granted Critical
Publication of JP4947035B2 publication Critical patent/JP4947035B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2008283153A 1997-05-26 2008-11-04 窒化物半導体素子 Expired - Lifetime JP4947035B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008283153A JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP13421097 1997-05-26
JP1997134210 1997-05-26
JP1997244342 1997-09-09
JP24434297 1997-09-09
JP1997274438 1997-10-07
JP27443897 1997-10-07
JP2008283153A JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002260153A Division JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2009027201A JP2009027201A (ja) 2009-02-05
JP2009027201A5 true JP2009027201A5 (enExample) 2009-03-19
JP4947035B2 JP4947035B2 (ja) 2012-06-06

Family

ID=40398642

Family Applications (3)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Country Status (1)

Country Link
JP (3) JP3478090B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6838705B1 (en) 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP2004055855A (ja) 2002-07-19 2004-02-19 Toyoda Gosei Co Ltd 通信装置
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
JP2006344689A (ja) 2005-06-07 2006-12-21 Rohm Co Ltd 半導体素子
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2007142198A (ja) 2005-11-18 2007-06-07 Rohm Co Ltd 半導体レーザ及び半導体レーザ製造方法
JP2008311579A (ja) 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
KR101007086B1 (ko) 2008-09-02 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011091289A (ja) * 2009-10-26 2011-05-06 Sony Corp 半導体素子の製造方法および半導体素子
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US8860077B2 (en) 2010-02-12 2014-10-14 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
JP2013098232A (ja) * 2011-10-28 2013-05-20 Sharp Corp 窒化物半導体レーザ素子
JP2014192475A (ja) * 2013-03-28 2014-10-06 Japan Oclaro Inc 窒化物光半導体素子及び光半導体装置
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置
JP7333504B2 (ja) 2020-11-16 2023-08-25 日亜化学工業株式会社 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband

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