JP2015084453A5 - - Google Patents
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- Publication number
- JP2015084453A5 JP2015084453A5 JP2015008121A JP2015008121A JP2015084453A5 JP 2015084453 A5 JP2015084453 A5 JP 2015084453A5 JP 2015008121 A JP2015008121 A JP 2015008121A JP 2015008121 A JP2015008121 A JP 2015008121A JP 2015084453 A5 JP2015084453 A5 JP 2015084453A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doped
- nitride semiconductor
- group iii
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005253 cladding Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 2
- 238000003475 lamination Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015008121A JP6033342B2 (ja) | 2015-01-19 | 2015-01-19 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015008121A JP6033342B2 (ja) | 2015-01-19 | 2015-01-19 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013166377A Division JP5698321B2 (ja) | 2013-08-09 | 2013-08-09 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびｉｉｉ族窒化物半導体発光素子ならびにこれらの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015084453A JP2015084453A (ja) | 2015-04-30 |
| JP2015084453A5 true JP2015084453A5 (enExample) | 2015-11-05 |
| JP6033342B2 JP6033342B2 (ja) | 2016-11-30 |
Family
ID=53047884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015008121A Active JP6033342B2 (ja) | 2015-01-19 | 2015-01-19 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6033342B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102355604B1 (ko) * | 2015-07-03 | 2022-01-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 라이트 유닛 |
| JP6691090B2 (ja) * | 2017-11-28 | 2020-04-28 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| CN110364600A (zh) * | 2019-07-03 | 2019-10-22 | 佛山市国星半导体技术有限公司 | 一种紫外发光二极管外延结构及其制作方法 |
| JP7614435B1 (ja) | 2024-09-02 | 2025-01-15 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3754120B2 (ja) * | 1996-02-27 | 2006-03-08 | 株式会社東芝 | 半導体発光装置 |
| JP2003142729A (ja) * | 2001-11-05 | 2003-05-16 | Sanken Electric Co Ltd | 半導体発光素子 |
| US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
| US7544963B2 (en) * | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
| US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
| JP4681684B1 (ja) * | 2009-08-24 | 2011-05-11 | Ｄｏｗａエレクトロニクス株式会社 | 窒化物半導体素子およびその製造方法 |
| CN102918663B (zh) * | 2010-03-01 | 2015-06-17 | 同和电子科技有限公司 | 半导体器件及其生产方法 |
| KR101855063B1 (ko) * | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 발광 소자 |
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2015
- 2015-01-19 JP JP2015008121A patent/JP6033342B2/ja active Active