JP6033342B2 - Ｉｉｉ族窒化物半導体発光素子およびその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体発光素子およびその製造方法 Download PDF

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JP6033342B2
JP6033342B2 JP2015008121A JP2015008121A JP6033342B2 JP 6033342 B2 JP6033342 B2 JP 6033342B2 JP 2015008121 A JP2015008121 A JP 2015008121A JP 2015008121 A JP2015008121 A JP 2015008121A JP 6033342 B2 JP6033342 B2 JP 6033342B2
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layer
group iii
iii nitride
nitride semiconductor
aln
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JP2015084453A (ja
JP2015084453A5 (enExample
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雅年 岩田
雅年 岩田
大鹿　嘉和
嘉和 大鹿
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Dowa Electronics Materials Co Ltd
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JP2013166377A Division JP5698321B2 (ja) 2013-08-09 2013-08-09 Ｉｉｉ族窒化物半導体エピタキシャル基板およびｉｉｉ族窒化物半導体発光素子ならびにこれらの製造方法

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KR102355604B1 (ko) * 2015-07-03 2022-01-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 라이트 유닛
JP6691090B2 (ja) * 2017-11-28 2020-04-28 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
CN110364600A (zh) * 2019-07-03 2019-10-22 佛山市国星半导体技术有限公司 一种紫外发光二极管外延结构及其制作方法
JP7614435B1 (ja) 2024-09-02 2025-01-15 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

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JP3754120B2 (ja) * 1996-02-27 2006-03-08 株式会社東芝 半導体発光装置
JP2003142729A (ja) * 2001-11-05 2003-05-16 Sanken Electric Co Ltd 半導体発光素子
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US20080054248A1 (en) * 2006-09-06 2008-03-06 Chua Christopher L Variable period variable composition supperlattice and devices including same
JP4681684B1 (ja) * 2009-08-24 2011-05-11 Ｄｏｗａエレクトロニクス株式会社 窒化物半導体素子およびその製造方法
CN102918663B (zh) * 2010-03-01 2015-06-17 同和电子科技有限公司 半导体器件及其生产方法
KR101855063B1 (ko) * 2011-06-24 2018-05-04 엘지이노텍 주식회사 발광 소자

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