JP2013098232A5 - - Google Patents

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Publication number
JP2013098232A5
JP2013098232A5 JP2011237398A JP2011237398A JP2013098232A5 JP 2013098232 A5 JP2013098232 A5 JP 2013098232A5 JP 2011237398 A JP2011237398 A JP 2011237398A JP 2011237398 A JP2011237398 A JP 2011237398A JP 2013098232 A5 JP2013098232 A5 JP 2013098232A5
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JP
Japan
Prior art keywords
layer
ingan
nitride semiconductor
semiconductor laser
thickness
Prior art date
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Pending
Application number
JP2011237398A
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English (en)
Japanese (ja)
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JP2013098232A (ja
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Priority to JP2011237398A priority Critical patent/JP2013098232A/ja
Priority claimed from JP2011237398A external-priority patent/JP2013098232A/ja
Publication of JP2013098232A publication Critical patent/JP2013098232A/ja
Publication of JP2013098232A5 publication Critical patent/JP2013098232A5/ja
Pending legal-status Critical Current

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JP2011237398A 2011-10-28 2011-10-28 窒化物半導体レーザ素子 Pending JP2013098232A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011237398A JP2013098232A (ja) 2011-10-28 2011-10-28 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011237398A JP2013098232A (ja) 2011-10-28 2011-10-28 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015211987A Division JP6218791B2 (ja) 2015-10-28 2015-10-28 窒化物半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2013098232A JP2013098232A (ja) 2013-05-20
JP2013098232A5 true JP2013098232A5 (enExample) 2014-10-23

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Family Applications (1)

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JP2011237398A Pending JP2013098232A (ja) 2011-10-28 2011-10-28 窒化物半導体レーザ素子

Country Status (1)

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JP (1) JP2013098232A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6225945B2 (ja) 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
US10218152B1 (en) * 2017-08-22 2019-02-26 Sharp Kabushiki Kaisha Semiconductor laser diode with low threshold current
JP6536649B2 (ja) * 2017-10-10 2019-07-03 日亜化学工業株式会社 半導体レーザ素子
JP2019091801A (ja) * 2017-11-14 2019-06-13 シャープ株式会社 窒化物半導体レーザ素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3361285B2 (ja) * 1996-01-19 2003-01-07 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP3478090B2 (ja) * 1997-05-26 2003-12-10 日亜化学工業株式会社 窒化物半導体素子
JP2003101148A (ja) * 1998-09-17 2003-04-04 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
JP2009252861A (ja) * 2008-04-03 2009-10-29 Rohm Co Ltd 半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP5394717B2 (ja) * 2008-12-15 2014-01-22 日本オクラロ株式会社 窒化物半導体光素子の製造方法
JP5143076B2 (ja) * 2009-04-09 2013-02-13 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2011003661A (ja) * 2009-06-17 2011-01-06 Rohm Co Ltd 半導体レーザ素子
JP5332955B2 (ja) * 2009-06-29 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
JP2011071561A (ja) * 2011-01-11 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体レーザを作製する方法、エピタキシャルウエハを作製する方法及び窒化物半導体レーザ

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