JP2013098232A - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP2013098232A
JP2013098232A JP2011237398A JP2011237398A JP2013098232A JP 2013098232 A JP2013098232 A JP 2013098232A JP 2011237398 A JP2011237398 A JP 2011237398A JP 2011237398 A JP2011237398 A JP 2011237398A JP 2013098232 A JP2013098232 A JP 2013098232A
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JP
Japan
Prior art keywords
layer
ingan
light guide
nitride semiconductor
thickness
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JP2011237398A
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English (en)
Japanese (ja)
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JP2013098232A5 (enExample
Inventor
Yuzo Tsuda
有三 津田
Shosaku Kubo
将策 久保
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Sharp Corp
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Sharp Corp
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Priority to JP2011237398A priority Critical patent/JP2013098232A/ja
Publication of JP2013098232A publication Critical patent/JP2013098232A/ja
Publication of JP2013098232A5 publication Critical patent/JP2013098232A5/ja
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JP2011237398A 2011-10-28 2011-10-28 窒化物半導体レーザ素子 Pending JP2013098232A (ja)

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JP2011237398A JP2013098232A (ja) 2011-10-28 2011-10-28 窒化物半導体レーザ素子

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JP2011237398A JP2013098232A (ja) 2011-10-28 2011-10-28 窒化物半導体レーザ素子

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JP2015211987A Division JP6218791B2 (ja) 2015-10-28 2015-10-28 窒化物半導体レーザ素子

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JP2013098232A true JP2013098232A (ja) 2013-05-20
JP2013098232A5 JP2013098232A5 (enExample) 2014-10-23

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219722A (ja) * 2015-05-26 2016-12-22 日亜化学工業株式会社 半導体レーザ素子
JP2017228812A (ja) * 2017-10-10 2017-12-28 日亜化学工業株式会社 半導体レーザ素子
JP2019041102A (ja) * 2017-08-22 2019-03-14 シャープ株式会社 レーザダイオード
JP2019091801A (ja) * 2017-11-14 2019-06-13 シャープ株式会社 窒化物半導体レーザ素子

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177175A (ja) * 1997-05-26 1999-07-02 Nichia Chem Ind Ltd 窒化物半導体素子
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP2003101148A (ja) * 1998-09-17 2003-04-04 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2006173621A (ja) * 2004-12-14 2006-06-29 Palo Alto Research Center Inc 半導体レーザ
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
JP2009218623A (ja) * 2009-06-29 2009-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ及びｉｉｉ族窒化物半導体レーザを作製する方法
JP2009252861A (ja) * 2008-04-03 2009-10-29 Rohm Co Ltd 半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP2010141242A (ja) * 2008-12-15 2010-06-24 Opnext Japan Inc 窒化物半導体光素子およびその製造方法
JP2010245444A (ja) * 2009-04-09 2010-10-28 Sharp Corp 窒化物半導体発光素子の製造方法
JP2011003661A (ja) * 2009-06-17 2011-01-06 Rohm Co Ltd 半導体レーザ素子
JP2011071561A (ja) * 2011-01-11 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体レーザを作製する方法、エピタキシャルウエハを作製する方法及び窒化物半導体レーザ

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JPH11177175A (ja) * 1997-05-26 1999-07-02 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003101148A (ja) * 1998-09-17 2003-04-04 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2006173621A (ja) * 2004-12-14 2006-06-29 Palo Alto Research Center Inc 半導体レーザ
JP2009059797A (ja) * 2007-08-30 2009-03-19 Sharp Corp 窒化物半導体レーザ素子
JP2009252861A (ja) * 2008-04-03 2009-10-29 Rohm Co Ltd 半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP2010141242A (ja) * 2008-12-15 2010-06-24 Opnext Japan Inc 窒化物半導体光素子およびその製造方法
JP2010245444A (ja) * 2009-04-09 2010-10-28 Sharp Corp 窒化物半導体発光素子の製造方法
JP2011003661A (ja) * 2009-06-17 2011-01-06 Rohm Co Ltd 半導体レーザ素子
JP2009218623A (ja) * 2009-06-29 2009-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ及びｉｉｉ族窒化物半導体レーザを作製する方法
JP2011071561A (ja) * 2011-01-11 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体レーザを作製する方法、エピタキシャルウエハを作製する方法及び窒化物半導体レーザ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219722A (ja) * 2015-05-26 2016-12-22 日亜化学工業株式会社 半導体レーザ素子
US10305257B2 (en) 2015-05-26 2019-05-28 Nichia Corporation Semiconductor laser device
US10686298B2 (en) 2015-05-26 2020-06-16 Nichia Corporation Method of manufacturing semiconductor laser device
JP2019041102A (ja) * 2017-08-22 2019-03-14 シャープ株式会社 レーザダイオード
JP2017228812A (ja) * 2017-10-10 2017-12-28 日亜化学工業株式会社 半導体レーザ素子
JP2019091801A (ja) * 2017-11-14 2019-06-13 シャープ株式会社 窒化物半導体レーザ素子

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