JP5060656B2 - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- JP5060656B2 JP5060656B2 JP2011540650A JP2011540650A JP5060656B2 JP 5060656 B2 JP5060656 B2 JP 5060656B2 JP 2011540650 A JP2011540650 A JP 2011540650A JP 2011540650 A JP2011540650 A JP 2011540650A JP 5060656 B2 JP5060656 B2 JP 5060656B2
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Description
11 基板
12 GaN層
13 n型GaNクラッド層
14 MQW活性層
15 GaN障壁層
16 InGaN井戸層
17 GaNキャップ層
18 AlGaNキャップ層
19 p型AlGaN電子障壁層
20 p型GaNクラッド層
21 p型GaNコンタクト層
22 p側電極
23 n側電極
Claims (3)
- n型窒化物半導体を有する第1クラッド層と、
前記第1クラッド層上に形成され、Inを含む窒化物半導体を有する活性層と、
前記活性層上に形成され、Mg濃度が1E18cm −3 以下のGaN層と、
前記GaN層上に形成され、第1のAl組成比が0より大きく0.01以下、Mg濃度が1E18cm −3 以下、厚さが前記GaN層の厚さより薄い第1AlGaN層と、
前記第1AlGaN層上に形成され、前記第1のAl組成比より高い第2のAl組成比を有し、且つ前記GaN層および前記第1AlGaN層より多量にMgを含有するp型第2AlGaN層と、
前記第2AlGaN層上に形成され、p型窒化物半導体を有する第2クラッド層と、
を具備することを特徴とする窒化物半導体発光素子。 - 前記活性層がバリア層と井戸層を積層した量子井戸構造を有し、前記GaN層に接する層が井戸層であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- n型窒化物半導体を有する第1クラッド層上に、Inを含む窒化物半導体を有する活性層を形成する工程と、
前記活性層上に、Mg濃度が1E18cm −3 以下のGaN層および第1のAl組成比が0より大きく0.01以下、Mg濃度が1E18cm −3 以下、厚さが前記GaN層の厚さより薄い第1AlGaN層を順に、有機金属気相成長法により前記活性層を形成する温度と同じ第1の成長温度、窒素ガス雰囲気およびMgを無添加で形成する工程と、
前記第1AlGaN層上に、前記第1のAl組成比より大きい第2のAl組成比を有する第2AlGaN層を、有機金属気相成長法により前記第1の成長温度より高い第2の成長温度、水素ガスを主成分とする雰囲気およびMgを添加して形成する工程と、
前記第2AlGaN層上に、p型窒化物半導体を有する第2クラッド層を形成する工程と、
を具備することを特徴とする窒化物半導体発光素子の製造方法。
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PCT/JP2009/007049 WO2011077473A1 (ja) | 2009-12-21 | 2009-12-21 | 窒化物半導体発光素子およびその製造方法 |
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US (2) | US8455917B2 (ja) |
EP (1) | EP2518783B1 (ja) |
JP (1) | JP5060656B2 (ja) |
KR (2) | KR101408610B1 (ja) |
CN (1) | CN102668138B (ja) |
WO (1) | WO2011077473A1 (ja) |
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US9196786B2 (en) | 2012-12-28 | 2015-11-24 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and method for manufacturing the same |
US9269868B2 (en) | 2013-09-24 | 2016-02-23 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and method for manufacturing semiconductor light emitting element |
WO2016092822A1 (ja) * | 2014-12-08 | 2016-06-16 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP2016111370A (ja) * | 2014-12-08 | 2016-06-20 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子の製造方法およびiii族窒化物半導体発光素子 |
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US9312432B2 (en) * | 2012-03-13 | 2016-04-12 | Tsmc Solid State Lighting Ltd. | Growing an improved P-GaN layer of an LED through pressure ramping |
US20140203287A1 (en) * | 2012-07-21 | 2014-07-24 | Invenlux Limited | Nitride light-emitting device with current-blocking mechanism and method for fabricating the same |
KR20140074516A (ko) * | 2012-12-10 | 2014-06-18 | 서울바이오시스 주식회사 | 질화갈륨계 반도체층 성장 방법 및 발광 소자 제조 방법 |
JP2014192274A (ja) * | 2013-03-27 | 2014-10-06 | Stanley Electric Co Ltd | 高出力GaN系半導体発光素子 |
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US9196786B2 (en) | 2012-12-28 | 2015-11-24 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and method for manufacturing the same |
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JP2016111370A (ja) * | 2014-12-08 | 2016-06-20 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子の製造方法およびiii族窒化物半導体発光素子 |
CN107004745A (zh) * | 2014-12-08 | 2017-08-01 | 同和电子科技有限公司 | 第iii族氮化物半导体发光器件的制造方法 |
US10147842B2 (en) | 2014-12-08 | 2018-12-04 | Dowa Electronics Materials Co., Ltd. | Method of producing III nitride semiconductor light-emitting device |
CN107004745B (zh) * | 2014-12-08 | 2019-03-08 | 同和电子科技有限公司 | 第iii族氮化物半导体发光器件的制造方法 |
US10283671B2 (en) | 2014-12-08 | 2019-05-07 | Dowa Electronics Materials Co., Ltd. | Method of producing III nitride semiconductor light-emitting device |
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KR20140047147A (ko) | 2014-04-21 |
US20120049157A1 (en) | 2012-03-01 |
KR20120081249A (ko) | 2012-07-18 |
EP2518783B1 (en) | 2016-04-13 |
EP2518783A1 (en) | 2012-10-31 |
EP2518783A4 (en) | 2014-03-19 |
US8455917B2 (en) | 2013-06-04 |
KR101422452B1 (ko) | 2014-07-22 |
JPWO2011077473A1 (ja) | 2013-05-02 |
WO2011077473A1 (ja) | 2011-06-30 |
KR101408610B1 (ko) | 2014-06-17 |
CN102668138A (zh) | 2012-09-12 |
US20130122626A1 (en) | 2013-05-16 |
CN102668138B (zh) | 2015-06-10 |
US8623683B2 (en) | 2014-01-07 |
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