JP2011023539A - Iii族窒化物半導体光素子 - Google Patents
Iii族窒化物半導体光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 339
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 265
- 230000003287 optical effect Effects 0.000 title claims abstract description 119
- 230000004888 barrier function Effects 0.000 claims abstract description 121
- 239000001301 oxygen Substances 0.000 claims abstract description 68
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 68
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000012535 impurity Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 24
- 230000000052 comparative effect Effects 0.000 description 83
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 70
- 229910002601 GaN Inorganic materials 0.000 description 41
- 239000007789 gas Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 18
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005253 cladding Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 8
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 238000005136 cathodoluminescence Methods 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- QQXSEZVCKAEYQJ-UHFFFAOYSA-N tetraethylgermanium Chemical compound CC[Ge](CC)(CC)CC QQXSEZVCKAEYQJ-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
【解決手段】III族窒化物半導体光素子11aは、c軸方向に延びる基準軸Cxに直交する基準平面Scに対して有限の角度をなす主面13aを有するIII族窒化物半導体基板13と、III族窒化物半導体基板13の主面13a上に設けられ、III族窒化物半導体からなる井戸層28、及び、III族窒化物半導体からなる複数のバリア層29を含む量子井戸構造の活性層17とを備え、主面13aは、半極性を示し、活性層17は、1×1017cm−3以上8×1017cm−3以下の酸素濃度を有しており、複数のバリア層29は、井戸層28のIII族窒化物半導体基板側の下部界面28Sdと接する上部界面近傍領域29uにおいて、酸素以外のn型不純物を1×1017cm−3以上1×1019cm−3以下の濃度で含む。
【選択図】図1
Description
以下、実施例及び比較例について説明する。
Claims (18)
- III族窒化物半導体からなり、該III族窒化物半導体のc軸方向に延びる基準軸に直交する基準平面に対して有限の角度をなす主面を有するIII族窒化物半導体基板と、
前記III族窒化物半導体基板の前記主面上に設けられ、III族窒化物半導体からなる井戸層、及び、III族窒化物半導体からなる複数のバリア層を含む量子井戸構造の活性層と、
を備え、
前記主面は、半極性を示し、
前記活性層は、エピタキシャル層であって、1×1017cm−3以上8×1017cm−3以下の酸素濃度を有しており、
前記複数のバリア層は、前記井戸層の前記III族窒化物半導体基板側の界面と接する界面近傍領域において、酸素以外のn型不純物を1×1017cm−3以上1×1019cm−3以下の濃度で含むことを特徴とするIII族窒化物半導体光素子。 - 前記バリア層が含む前記n型不純物は、シリコン、ゲルマニウム、及び、スズのうちの少なくとも1つであることを特徴とする請求項1に記載のIII族窒化物半導体光素子。
- 前記複数のバリア層は、前記井戸層の界面と接する界面近傍領域において、前記酸素以外のn型不純物を1×1017cm−3以上1×1019cm−3以下の濃度で含むことを特徴とする請求項1又は2に記載のIII族窒化物半導体光素子。
- 前記複数のバリア層は、その厚さ方向の全体にわたって、前記酸素以外のn型不純物を1×1017cm−3以上1×1019cm−3以下の濃度で含むことを特徴とする請求項1〜3のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記n型不純物の濃度は、5×1017cm−3以上であることを特徴とする請求項1〜4のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記n型不純物の濃度は、1×1018cm−3以上であることを特徴とする請求項1〜5のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記主面の法線方向を示す法線ベクトルと前記基準軸の方向を示す基準ベクトルとの成す角度は、10度以上80度以下及び100度以上170度以下の範囲にあることを特徴とする請求項1〜6のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記法線ベクトルと前記基準ベクトルとの成す角度は、63度以上80度以下及び100度以上117度以下の範囲にあることを特徴とする請求項1〜7のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記法線ベクトルと前記基準ベクトルとの成す角度は、71度以上79度以下及び101度以上109度以下の範囲にあることを特徴とする請求項1〜8のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記法線ベクトルは、前記基準ベクトルを前記III族窒化物半導体のa軸の周りに回転させた方向であることを特徴とする請求項1〜9のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記主面とa面とが成す角度は、87度以上93度以下であることを特徴とする請求項10に記載のIII族窒化物半導体光素子。
- 前記法線ベクトルは、前記基準ベクトルを前記III族窒化物半導体のm軸の周りに回転させた方向であることを特徴とする請求項1〜9のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記主面とm面とが成す角度は、87度以上93度以下であることを特徴とする請求項12に記載のIII族窒化物半導体光素子。
- 前記主面は、{20−21}面であることを特徴とする請求項1〜9のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記主面は、{20−2−1}面であることを特徴とする請求項1〜9のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記活性層を貫通している転位密度は、1×106cm−2以下であることを特徴とする請求項1〜15のいずれか一項に記載のIII族窒化物半導体光素子。
- 前記活性層を貫通している転位密度は、1×105cm−2以下であることを特徴とする請求項1〜16のいずれか一項に記載のIII族窒化物半導体光素子。
- III族窒化物半導体からなる第1導電型の第1半導体層と、
III族窒化物半導体からなる第2導電型の第2半導体層と、
をさらに備え、
前記第1半導体層は、前記III族窒化物半導体基板と前記活性層との間に設けられ、
前記活性層は、前記第1半導体層と前記第2半導体層との間に設けられ、
前記活性層は、複数の前記井戸層を含み、
前記複数の前記井戸層のうち、最も前記第2半導体層側の井戸層と、前記第2半導体層との間には、酸素以外のn型不純物を含む半導体層が存在することを特徴とする請求項8〜17のいずれか一項に記載のIII族窒化物半導体光素子。
Priority Applications (7)
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JP2009167143A JP5381439B2 (ja) | 2009-07-15 | 2009-07-15 | Iii族窒化物半導体光素子 |
US13/055,690 US8927962B2 (en) | 2009-07-15 | 2010-02-26 | Group III nitride semiconductor optical device |
KR1020107021641A KR101157758B1 (ko) | 2009-07-15 | 2010-02-26 | Ⅲ족 질화물 반도체 광소자 |
PCT/JP2010/053101 WO2011007594A1 (ja) | 2009-07-15 | 2010-02-26 | Iii族窒化物半導体光素子 |
EP10781399.0A EP2472606A4 (en) | 2009-07-15 | 2010-02-26 | OPTICAL GROUP III NITRIDE SEMICONDUCTOR ELEMENT |
CN2010800013406A CN102124578B (zh) | 2009-07-15 | 2010-02-26 | Ⅲ族氮化物半导体光元件 |
TW099107694A TW201103167A (en) | 2009-07-15 | 2010-03-16 | Group iii nitride semiconductor optical element |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011138891A (ja) * | 2009-12-28 | 2011-07-14 | Nichia Corp | 窒化物半導体素子 |
WO2012144251A1 (ja) * | 2011-04-22 | 2012-10-26 | 住友電気工業株式会社 | 窒化物半導体レーザ、及びエピタキシャル基板 |
JP2013008791A (ja) * | 2011-06-23 | 2013-01-10 | Sumitomo Electric Ind Ltd | レーザダイオード組立体 |
WO2013103035A1 (ja) * | 2012-01-05 | 2013-07-11 | 住友電気工業株式会社 | 窒化物半導体レーザ、及びエピタキシャル基板 |
JP2013157350A (ja) * | 2012-01-26 | 2013-08-15 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体レーザ、及びiii族窒化物半導体レーザを作製する方法 |
WO2013132812A1 (ja) * | 2012-03-05 | 2013-09-12 | パナソニック株式会社 | 窒化物半導体発光素子、光源及びその製造方法 |
CN103650263A (zh) * | 2011-06-29 | 2014-03-19 | 住友电气工业株式会社 | Iii族氮化物半导体元件及iii族氮化物半导体元件的制造方法 |
JP2014207328A (ja) * | 2013-04-12 | 2014-10-30 | ローム株式会社 | 半導体発光素子 |
JP2015500573A (ja) * | 2011-12-14 | 2015-01-05 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 半導体素子及びそれを製造する方法 |
WO2015012017A1 (ja) * | 2013-07-23 | 2015-01-29 | ウシオ電機株式会社 | 窒化物半導体発光素子及びその製造方法 |
US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
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JP6474044B2 (ja) * | 2015-09-15 | 2019-02-27 | 豊田合成株式会社 | 発光ユニット |
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WO2015012017A1 (ja) * | 2013-07-23 | 2015-01-29 | ウシオ電機株式会社 | 窒化物半導体発光素子及びその製造方法 |
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Also Published As
Publication number | Publication date |
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JP5381439B2 (ja) | 2014-01-08 |
WO2011007594A1 (ja) | 2011-01-20 |
US20110121265A1 (en) | 2011-05-26 |
EP2472606A1 (en) | 2012-07-04 |
CN102124578A (zh) | 2011-07-13 |
EP2472606A4 (en) | 2015-01-07 |
TW201103167A (en) | 2011-01-16 |
KR101157758B1 (ko) | 2012-06-26 |
US8927962B2 (en) | 2015-01-06 |
CN102124578B (zh) | 2013-07-31 |
KR20110027643A (ko) | 2011-03-16 |
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