JPWO2011077473A1 - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 85
- 239000000203 mixture Substances 0.000 claims abstract description 47
- 238000005253 cladding Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 72
- 239000011777 magnesium Substances 0.000 description 46
- 239000007789 gas Substances 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 23
- 239000000758 substrate Substances 0.000 description 18
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
Description
11 基板
12 GaN層
13 n型GaNクラッド層
14 MQW活性層
15 GaN障壁層
16 InGaN井戸層
17 GaNキャップ層
18 AlGaNキャップ層
19 p型AlGaN電子障壁層
20 p型GaNクラッド層
21 p型GaNコンタクト層
22 p側電極
23 n側電極
Claims (9)
- n型窒化物半導体を有する第1クラッド層と、
前記第1クラッド層上に形成され、Inを含む窒化物半導体を有する活性層と、
前記活性層上に形成されたGaN層と、
前記GaN層上に形成され、第1のAl組成比を有する第1AlGaN層と、
前記第1AlGaN層上に形成され、前記第1のAl組成比より高い第2のAl組成比を有し、且つ前記GaN層および前記第1AlGaN層より多量にMgを含有するp型第2AlGaN層と、
前記第2AlGaN層上に形成され、p型窒化物半導体を有する第2クラッド層と、
を具備することを特徴とする窒化物半導体発光素子。 - 前記第1のAl組成比が、0より大きく0.01以下であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記GaN層および前記第1AlGaN層のMg濃度が、1E18cm−3以下であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記第1AlGaN層の厚さが、前記GaN層の厚さより薄いことを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記活性層がバリア層と井戸層を積層した量子井戸構造を有し、前記GaN層に接する層が井戸層であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- n型窒化物半導体を有する第1クラッド層上に、Inを含む窒化物半導体を有する活性層を形成する工程と、
前記活性層上に、GaN層および第1のAl組成比を有する第1AlGaN層を順に、有機金属気相成長法により第1の成長温度、窒素ガス雰囲気およびMgを無添加で形成する工程と、
前記第1AlGaN層上に、前記第1のAl組成比より大きい第2のAl組成比を有する第2AlGaN層を、有機金属気相成長法により前記第1の成長温度より高い第2の成長温度、水素ガスを主成分とする雰囲気およびMgを添加して形成する工程と、
前記第2AlGaN層上に、p型窒化物半導体を有する第2クラッド層を形成する工程と、
を具備することを特徴とする窒化物半導体発光素子の製造方法。 - 前記第1のAl組成比が、0より大きく0.01以下であることを特徴とする請求項6に記載の窒化物半導体発光素子の製造方法。
- 前記GaN層および前記第1AlGaN層のMg濃度が、1E18cm−3以下であることを特徴とする請求項6に記載の窒化物半導体発光素子の製造方法。
- 前記第1AlGaN層の厚さが、前記GaN層の厚さより薄いことを特徴とする請求項6に記載の窒化物半導体発光素子の製造方法。
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US (2) | US8455917B2 (ja) |
EP (1) | EP2518783B1 (ja) |
JP (1) | JP5060656B2 (ja) |
KR (2) | KR101422452B1 (ja) |
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JP5060656B2 (ja) * | 2009-12-21 | 2012-10-31 | 株式会社東芝 | 窒化物半導体発光素子およびその製造方法 |
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