CN205564813U - 一种发光二极管装置及显示装置 - Google Patents
一种发光二极管装置及显示装置 Download PDFInfo
- Publication number
- CN205564813U CN205564813U CN201620193964.7U CN201620193964U CN205564813U CN 205564813 U CN205564813 U CN 205564813U CN 201620193964 U CN201620193964 U CN 201620193964U CN 205564813 U CN205564813 U CN 205564813U
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- terminal pad
- pad
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
- H01L2224/03312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
- H01L2224/0332—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/03848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05557—Shape in side view comprising protrusions or indentations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06183—On contiguous sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2902—Disposition
- H01L2224/29026—Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
- H01L2224/29028—Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body the layer connector being disposed on at least two separate bonding areas, e.g. bond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/2912—Antimony [Sb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
本实用新型涉及一种发光二极管装置及显示装置。该发光二极管装置包括:发光二极管和基板;所述基板上涂覆有结合基质;所述发光二极管设有正极焊盘和负极焊盘;所述正极焊盘和/或负极焊盘的表面设有突起,所述突起嵌入所述结合基质中;所述正极焊盘和负极焊盘通过所述结合基质与所述基板固接。本实用新型提供的发光二极管装置及显示装置,通过在发光二极管的焊盘上设置突起,避免了增大焊盘面积,在焊盘面积一定的前提下增大了焊盘与焊锡的接触面积,提升了发光二极管与基板结合的稳定性,降低了制作成本。
Description
技术领域
本实用新型涉及显示技术领域,特别涉及一种发光二极管装置及显示装置。
背景技术
发光二极管(Light-Emitting Diodes,LED)是半导体二极管的一种,其广泛应用于LED显示屏、液晶屏背光源、照明光源和交通信号灯等领域。
表面组装技术(Surface Mount Technology,SMT)是将传统的电子元器件压缩成为体积只有几十分之一的器件直接将表面组装元器件贴、焊到印制板表面规定位置上的装联技术。
现有技术中LED封装通过焊盘与基板连接,容易出现因LED与基板结合不稳定导致焊盘脱落的问题。现有技术中为了提升打件的稳定性,增大LED的焊盘面积,并严格管控SMT的制作工艺。然而,焊盘的制作工艺复杂,增大焊盘的面积会增大LED的制作成本,并且一旦SMT的制作工艺过程出现问题,将会导致打件不稳定,影响LED的性能。
实用新型内容
本实用新型所要解决的技术问题是如何提升发光二极管与基板结合的稳定性,降低制作成本。
为此目的,本实用新型一方面提出了一种发光二极管装置,该发光二极管装置包括:
发光二极管和基板;
所述基板上涂覆有结合基质;
所述发光二极管设有正极焊盘和负极焊盘;
所述正极焊盘和/或负极焊盘的表面设有突起,所述突起嵌入所述结合基质中;
所述正极焊盘和负极焊盘通过所述结合基质与所述基板固接。
可选地,所述正极焊盘和/或负极焊盘位于所述发光二极管的底面。
可选地,所述正极焊盘和/或负极焊盘位于所述发光二极管的侧面。
可选地,所述基板设有凹槽,所述发光二极管位于所述凹槽内。
可选地,所述突起的截面形状为矩形、三角形或波浪形。
可选地,所述结合基质为焊锡。
可选地,所述突起的延伸方向垂直于焊盘所在平面。
可选地,所述突起是采用压铸、3D打印、拉丝或喷涂形成于焊盘表面的。
可选地,所述发光二极管与涂覆结合基质的基板是对合后热烘固定连接的。
可选地,所述正极焊盘的面积小于所述负极焊盘的面积。
本实用新型另一方面提出了一种显示装置,包括上述发光二极管装置。
本实用新型提供的发光二极管装置及显示装置,通过在发光二极管的焊盘上设置突起,避免了增大焊盘面积,在焊盘面积一定的前提下增大了焊盘与焊锡的接触面积,提升了发光二极管与基板结合的稳定性,降低了制作成本。同时,在发光二极管上的焊盘上设置的突起更有利于散热,延长了发光二极管的使用寿命。
附图说明
通过参考附图会更加清楚的理解本实用新型的特征和优点,附图是示意性的而不应理解为对本实用新型进行任何限制,在附图中:
图1示出了本实用新型第一个实施例的发光二极管装置的结构示 意图;
图2a、图2b、图2c示出了本实用新型突起的截面示意图;
图3示出了本实用新型第二个实施例的发光二极管装置的结构示意图;
图4a、图4b、图4c示出了本实用新型第三个实施例的发光二极管装置的结构示意图。
具体实施方式
下面将结合附图对本实用新型的实施例进行详细描述。
实施例1
图1示出了本实用新型第一个实施例的发光二极管装置的结构示意图。如图1所示,该实施例的发光二极管装置包括:
发光二极管1和基板2;
基板2上涂覆有结合基质3;
发光二极管1设有正极焊盘11和负极焊盘12;
正极焊盘11和负极焊盘12的表面设有突起,所述突起嵌入结合基质3中;
正极焊盘11和负极焊盘12通过结合基质3与基板2固接。
在实际应用中,仅在正极焊盘11或仅在负极焊盘12的表面设有突起的方式能增大焊盘与焊锡的接触面积。为了进一步增大焊盘与焊锡的接触面积,通常正极焊盘11和负极焊盘12的表面均设有突起,以提升发光二极管与基板结合的稳定性。
本实施例的发光二极管装置,通过在发光二极管的焊盘上设置突起,避免了增大焊盘面积。本实施例的发光二极管装置在焊盘面积一定的前提下增大了焊盘与焊锡的接触面积,提升了发光二极管与基板结合的稳定性,不需要为了提升发光二极管与基板结合的稳定性而采用大面积的焊盘,降低了制作成本。同时,在发光二极管上的焊盘上设置的突起更有利于散热,延长了发光二极管的使用寿命。
图1中所示的正极焊盘11和负极焊盘12位于发光二极管1的底面。正极焊盘11的面积小于负极焊盘12的面积。需要说明的是,在实际应用中,可根据需要将正极焊盘11和/或负极焊盘12设置在发光二极管的侧面。
图2a、图2b和图2c为突起的截面示意图,如图2a、图2b和图2c所示,正极焊盘表面突起的截面形状为矩形(图2a)、三角形(图2b)或波浪形(图2c)。当然可以理解,本发明不仅限于此,还可以是其他不规则形状。
优选地,结合基质3为焊锡,可以为锡铅合金焊锡、加锑焊锡、加镉焊锡、加银焊锡或加铜焊锡。以焊锡作为发光二极管与基板的结合基质可提升发光二极管与基板结合的稳定性。
为了进一步增大焊盘与焊锡的接触面积,将突起的延伸方向设置为垂直于焊盘所在平面,进一步提升发光二极管与基板结合的稳定性,避免了增大焊盘面积导致的制作成本的增高。
在实际应用中,该突起是采用压铸、3D打印、拉丝或喷涂形成于焊盘表面的;发光二极管与涂覆结合基质的基板是对合后热烘固定连接的。本实施例对此不做限制。
实施例2
图3示出了本实用新型第二个实施例的发光二极管装置的结构示意图。如图3所示,实施例2与实施例1基本相同,其主要区别在于,基板2设有凹槽,发光二极管1位于所述凹槽内。
实施例3
图4a示出了本实用新型第三个实施例的发光二极管装置的结构示意图。如图4a所示,实施例3与实施例1基本相同,其主要区别在于,正极焊盘11和负极焊盘12位于发光二极管1的底面和侧面;基板2设有凹槽,发光二极管1位于所述凹槽内。
作为实施例3的一种变形,也可仅在发光二极管的侧面设置正极 焊盘11和负极焊盘12(图4b)。
作为实施例3的另一种变形,可在发光二极管的侧面设置正极焊盘11,在发光二极管的底面设置负极焊盘12(图4c)。
实施例4
本实用新型还提供了一种显示装置,包括上述发光二极管装置。本实施例提供的显示装置可以是笔记本电脑显示屏、户外大屏幕、电视、数码相机、手机、平板电脑等任何具有显示功能的产品。其中,发光二极管可以作为显示装置的指示灯使用,也可以作为显示装置的背光源使用。通过在发光二极管的焊盘上设置突起结构,增大了焊盘与焊锡的接触面积,提升了发光二极管与基板结合的稳定性。同时,在发光二极管上的焊盘上设置的突起更有利于散热,延长了发光二极管的使用寿命。显示装置的背光源需要多个发光二极管,降低单个发光二极管的制作成本,可降低显示装置的整体制作成本。
本实用新型提供的发光二极管装置及显示装置,通过在发光二极管的焊盘上设置突起结构,增大了焊盘与焊锡的接触面积,提升了发光二极管与基板结合的稳定性,降低了制作成本。同时,在发光二极管上的焊盘上设置的突起更有利于散热,延长了发光二极管的使用寿命。
虽然结合附图描述了本实用新型的实施方式,但是本领域技术人员可以在不脱离本实用新型的精神和范围的情况下做出各种修改和变型,这样的修改和变型均落入由所附权利要求所限定的范围之内。
Claims (11)
1.一种发光二极管装置,其特征在于,包括:发光二极管和基板;
所述基板上涂覆有结合基质;
所述发光二极管设有正极焊盘和负极焊盘;
所述正极焊盘和/或负极焊盘的表面设有突起,所述突起嵌入所述结合基质中;
所述正极焊盘和负极焊盘通过所述结合基质与所述基板固接。
2.根据权利要求1所述的发光二极管装置,其特征在于,所述正极焊盘和/或负极焊盘位于所述发光二极管的底面。
3.根据权利要求1所述的发光二极管装置,其特征在于,所述正极焊盘和/或负极焊盘位于所述发光二极管的侧面。
4.根据权利要求2或3所述的发光二极管装置,其特征在于,所述基板设有凹槽,所述发光二极管位于所述凹槽内。
5.根据权利要求1所述的发光二极管装置,其特征在于,所述突起的截面形状为矩形、三角形或波浪形。
6.根据权利要求1所述的发光二极管装置,其特征在于,所述结合基质为焊锡。
7.根据权利要求1所述的发光二极管装置,其特征在于,所述突起的延伸方向垂直于焊盘所在平面。
8.根据权利要求1所述的发光二极管装置,其特征在于,所述突起是采用压铸、3D打印、拉丝或喷涂形成于焊盘表面的。
9.根据权利要求1所述的发光二极管装置,其特征在于,所述发光二极管与涂覆结合基质的基板是对合后热烘固定连接的。
10.根据权利要求1所述的发光二极管装置,其特征在于,所述正极焊盘的面积小于所述负极焊盘的面积。
11.一种显示装置,其特征在于,包括权利要求1-10任一项所述 的发光二极管装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620193964.7U CN205564813U (zh) | 2016-03-14 | 2016-03-14 | 一种发光二极管装置及显示装置 |
PCT/CN2016/084712 WO2017156890A1 (zh) | 2016-03-14 | 2016-06-03 | 一种发光二极管、发光装置及显示装置 |
US15/518,877 US10763413B2 (en) | 2016-03-14 | 2016-06-03 | Light emitting diode with pads on side surface thereof, light emitting device and display device including the light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620193964.7U CN205564813U (zh) | 2016-03-14 | 2016-03-14 | 一种发光二极管装置及显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205564813U true CN205564813U (zh) | 2016-09-07 |
Family
ID=56817921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620193964.7U Active CN205564813U (zh) | 2016-03-14 | 2016-03-14 | 一种发光二极管装置及显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10763413B2 (zh) |
CN (1) | CN205564813U (zh) |
WO (1) | WO2017156890A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112909153A (zh) * | 2019-12-03 | 2021-06-04 | 深圳市聚飞光电股份有限公司 | 倒装led芯片、线路板以及电子设备 |
CN116435445A (zh) * | 2023-06-13 | 2023-07-14 | 山西中科潞安紫外光电科技有限公司 | 具有高推力值的发光二极管芯片及其制备方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10734348B2 (en) | 2018-09-21 | 2020-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonded semiconductor devices and methods of forming the same |
WO2020174879A1 (ja) * | 2019-02-26 | 2020-09-03 | 京セラ株式会社 | 発光素子基板、表示装置および表示装置のリペア方法 |
CN110867462A (zh) * | 2019-10-30 | 2020-03-06 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及显示装置 |
CN113823724B (zh) * | 2020-06-19 | 2023-06-16 | 成都辰显光电有限公司 | 微发光二极管器件及显示面板 |
CN112968030B (zh) * | 2020-12-30 | 2022-09-23 | 重庆康佳光电技术研究院有限公司 | 显示面板与其制作方法 |
US11715753B2 (en) * | 2020-12-30 | 2023-08-01 | Applied Materials, Inc. | Methods for integration of light emitting diodes and image sensors |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
CN101877383A (zh) * | 2006-09-15 | 2010-11-03 | 晶元光电股份有限公司 | 发光装置 |
CN101359704B (zh) * | 2007-07-30 | 2010-06-09 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
JP5060656B2 (ja) * | 2009-12-21 | 2012-10-31 | 株式会社東芝 | 窒化物半導体発光素子およびその製造方法 |
KR100999736B1 (ko) * | 2010-02-17 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 라이트 유닛 |
KR101401764B1 (ko) * | 2010-05-12 | 2014-05-30 | 도요타지도샤가부시키가이샤 | 반도체 장치 |
KR20130077059A (ko) * | 2011-12-29 | 2013-07-09 | 하나 마이크론(주) | Led 패키지 및 그 제조방법 |
JP2013197456A (ja) * | 2012-03-22 | 2013-09-30 | Stanley Electric Co Ltd | Ledアレイ及び車両用灯具 |
TW201340428A (zh) * | 2012-03-29 | 2013-10-01 | Foxsemicon Integrated Tech Inc | 發光二極體及其製造方法 |
US8985794B1 (en) * | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US9673364B2 (en) * | 2013-07-19 | 2017-06-06 | Nichia Corporation | Light emitting device and method of manufacturing the same |
US20150034996A1 (en) * | 2013-08-01 | 2015-02-05 | Epistar Corporation | Light-emitting device |
CN103996655B (zh) * | 2014-03-07 | 2017-02-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法,显示面板、显示装置 |
-
2016
- 2016-03-14 CN CN201620193964.7U patent/CN205564813U/zh active Active
- 2016-06-03 US US15/518,877 patent/US10763413B2/en active Active
- 2016-06-03 WO PCT/CN2016/084712 patent/WO2017156890A1/zh active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112909153A (zh) * | 2019-12-03 | 2021-06-04 | 深圳市聚飞光电股份有限公司 | 倒装led芯片、线路板以及电子设备 |
CN116435445A (zh) * | 2023-06-13 | 2023-07-14 | 山西中科潞安紫外光电科技有限公司 | 具有高推力值的发光二极管芯片及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017156890A1 (zh) | 2017-09-21 |
US10763413B2 (en) | 2020-09-01 |
US20180102465A1 (en) | 2018-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN205564813U (zh) | 一种发光二极管装置及显示装置 | |
JP2003092010A (ja) | 照明装置 | |
CN104006327A (zh) | 发光二极管背光模块 | |
TWI392923B (zh) | 具有發光二極體之背光單元及製造該背光單元之方法 | |
WO2015172550A1 (zh) | 一种led灯及其制造工艺和背光模组 | |
CN101170151A (zh) | 倒装键合贴片led封装结构 | |
CN110865485A (zh) | 照明装置及具备照明装置的显示装置 | |
CN100498468C (zh) | 不具有印刷电路板的led背光单元的制造方法 | |
CN110277378B (zh) | 一种集合基板、发光装置及其制造方法 | |
US8309977B2 (en) | Organic light-emitting diode module | |
KR101086997B1 (ko) | 발광 소자 패키지와 그의 제조 방법 및 그를 이용한 카메라 플래시 모듈 | |
CN203560778U (zh) | 一种背光组件及显示装置 | |
CN107290898B (zh) | 背光组件 | |
JP2002232015A (ja) | 半導体発光装置 | |
CN108119783B (zh) | Oled发光模块 | |
CN103594587B (zh) | 一种发光二极管打线电极的制造方法 | |
CN107830502B (zh) | Led贴片灯、发光组件及移动终端 | |
US8053282B2 (en) | Mounting structure of component of lighting device and method thereof | |
CN208804506U (zh) | 一种矩阵式光源灯条 | |
US10304905B2 (en) | Light-emitting module | |
CN210956720U (zh) | 一种led支架、倒装led芯片封装体 | |
CN106304630B (zh) | 软性电路板及显示装置 | |
CN205211327U (zh) | 一种led显示板 | |
CN112701114B (zh) | 背光装置及其制作方法 | |
CN211529967U (zh) | Led闪光灯 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |