JP4884826B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP4884826B2 JP4884826B2 JP2006125177A JP2006125177A JP4884826B2 JP 4884826 B2 JP4884826 B2 JP 4884826B2 JP 2006125177 A JP2006125177 A JP 2006125177A JP 2006125177 A JP2006125177 A JP 2006125177A JP 4884826 B2 JP4884826 B2 JP 4884826B2
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- JP
- Japan
- Prior art keywords
- layer
- semiconductor light
- light emitting
- emitting device
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 230000004888 barrier function Effects 0.000 claims description 31
- 229910021480 group 4 element Inorganic materials 0.000 claims description 12
- 229910021476 group 6 element Inorganic materials 0.000 claims description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Description
半導体発光素子Aについて、実施例1とこれと比較するための比較例1,2とを以下の通り作製した。
1 基板
2 n−GaN層(n型半導体層)
3 活性層
31 井戸層
32 バリア層
32a ドープ部
32b アンドープ部
4 p−GaN層(p型半導体層)
Claims (2)
- InGaNを含む少なくとも1以上の井戸層、およびこの井戸層を挟みかつInGaNまたはGaNを含む2以上のバリア層を有する量子井戸構造とされた活性層と、
上記活性層を挟むn型半導体層およびp型半導体層と、を備える半導体発光素子であって、
上記井戸層の全体と、上記各バリア層のうち上記p型半導体層寄りの部分とには、IV族またはVI族元素がドープされており、
上記各バリア層のうち上記n型半導体層寄りの部分は、アンドープとされていることを特徴とする、半導体発光素子。 - 上記IV族元素は、Siであり、上記VI族元素は、Oである、請求項1に記載の半導体発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006125177A JP4884826B2 (ja) | 2006-04-28 | 2006-04-28 | 半導体発光素子 |
US11/789,035 US20070278474A1 (en) | 2006-04-28 | 2007-04-23 | Semiconductor light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006125177A JP4884826B2 (ja) | 2006-04-28 | 2006-04-28 | 半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007299848A JP2007299848A (ja) | 2007-11-15 |
JP2007299848A5 JP2007299848A5 (ja) | 2008-12-04 |
JP4884826B2 true JP4884826B2 (ja) | 2012-02-29 |
Family
ID=38769119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006125177A Active JP4884826B2 (ja) | 2006-04-28 | 2006-04-28 | 半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070278474A1 (ja) |
JP (1) | JP4884826B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100961492B1 (ko) * | 2007-12-18 | 2010-06-08 | 서울옵토디바이스주식회사 | 다중양자웰 구조의 활성 영역을 갖는 발광 다이오드 |
JP5191843B2 (ja) | 2008-09-09 | 2013-05-08 | 株式会社東芝 | 半導体発光素子及びウェーハ |
KR102038885B1 (ko) | 2013-05-27 | 2019-10-31 | 삼성전자주식회사 | 반도체 발광소자 |
FR3028671B1 (fr) * | 2014-11-19 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente a puits quantiques dopes et procede de fabrication associe |
CN107240627B (zh) * | 2017-05-16 | 2019-06-21 | 东南大学 | 一种具有双掺杂多量子阱结构的紫外发光二极管 |
JP6968122B2 (ja) | 2019-06-06 | 2021-11-17 | 日機装株式会社 | 窒化物半導体発光素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277868A (ja) * | 1999-03-25 | 2000-10-06 | Sanyo Electric Co Ltd | 発光素子 |
US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
JP4032636B2 (ja) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | 発光素子 |
TWI234915B (en) * | 2002-11-18 | 2005-06-21 | Pioneer Corp | Semiconductor light-emitting element and method of manufacturing the same |
JP2004200671A (ja) * | 2002-12-03 | 2004-07-15 | Nec Corp | 量子井戸構造を有する半導体光素子およびその製造方法 |
KR100476567B1 (ko) * | 2003-09-26 | 2005-03-17 | 삼성전기주식회사 | 질화물 반도체 소자 |
JP2005244207A (ja) * | 2004-01-30 | 2005-09-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP4622466B2 (ja) * | 2004-11-12 | 2011-02-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
-
2006
- 2006-04-28 JP JP2006125177A patent/JP4884826B2/ja active Active
-
2007
- 2007-04-23 US US11/789,035 patent/US20070278474A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2007299848A (ja) | 2007-11-15 |
US20070278474A1 (en) | 2007-12-06 |
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