JP2015005745A5 - - Google Patents
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- Publication number
- JP2015005745A5 JP2015005745A5 JP2014123447A JP2014123447A JP2015005745A5 JP 2015005745 A5 JP2015005745 A5 JP 2015005745A5 JP 2014123447 A JP2014123447 A JP 2014123447A JP 2014123447 A JP2014123447 A JP 2014123447A JP 2015005745 A5 JP2015005745 A5 JP 2015005745A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- concentration
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0069663 | 2013-06-18 | ||
| KR1020130069663A KR102101356B1 (ko) | 2013-06-18 | 2013-06-18 | 발광소자 및 조명시스템 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015005745A JP2015005745A (ja) | 2015-01-08 |
| JP2015005745A5 true JP2015005745A5 (enExample) | 2017-08-03 |
| JP6426377B2 JP6426377B2 (ja) | 2018-11-21 |
Family
ID=51210224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014123447A Active JP6426377B2 (ja) | 2013-06-18 | 2014-06-16 | 発光素子及び照明システム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9147811B2 (enExample) |
| EP (1) | EP2816615B1 (enExample) |
| JP (1) | JP6426377B2 (enExample) |
| KR (1) | KR102101356B1 (enExample) |
| CN (1) | CN104241474B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394019B (zh) | 2017-07-31 | 2019-07-12 | 安徽三安光电有限公司 | 一种半导体发光元件及其制备方法 |
| US10978612B2 (en) | 2017-07-31 | 2021-04-13 | Xiamen San'an Optoelectronics Co., Ltd | Semiconductor light emitting device |
| US11557693B2 (en) | 2017-07-31 | 2023-01-17 | Xiamen San'an Optoelectronics Co., Ltd. | Semiconductor light emitting device |
| CN110379898B (zh) * | 2019-05-22 | 2020-11-17 | 华灿光电(苏州）有限公司 | 发光二极管外延片及其生长方法 |
| KR20240112402A (ko) * | 2023-01-11 | 2024-07-19 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3164478B2 (ja) * | 1994-08-31 | 2001-05-08 | 京セラ株式会社 | 半導体装置およびその製造方法 |
| JP3122324B2 (ja) * | 1995-02-20 | 2001-01-09 | 三菱電線工業株式会社 | 半導体発光素子 |
| JPH0945959A (ja) * | 1995-07-28 | 1997-02-14 | Toshiba Corp | 発光素子 |
| JP3966962B2 (ja) * | 1997-10-16 | 2007-08-29 | スタンレー電気株式会社 | 発光ダイオード及びその製造方法 |
| JP2000174338A (ja) * | 1998-12-02 | 2000-06-23 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| US6608328B2 (en) * | 2001-02-05 | 2003-08-19 | Uni Light Technology Inc. | Semiconductor light emitting diode on a misoriented substrate |
| US7528417B2 (en) * | 2003-02-10 | 2009-05-05 | Showa Denko K.K. | Light-emitting diode device and production method thereof |
| TWI231053B (en) * | 2003-02-10 | 2005-04-11 | Showa Denko Kk | Semiconductor light emitting device and the manufacturing method thereof |
| JP4255710B2 (ja) * | 2003-02-10 | 2009-04-15 | 昭和電工株式会社 | 半導体発光素子 |
| JP2007042751A (ja) | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | 半導体発光素子 |
| JP5018433B2 (ja) * | 2007-11-30 | 2012-09-05 | 日立電線株式会社 | 半導体発光素子用エピタキシャルウェハ及び半導体発光素子 |
| US8399948B2 (en) * | 2009-12-04 | 2013-03-19 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
| KR101028286B1 (ko) * | 2009-12-28 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101028251B1 (ko) * | 2010-01-19 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| JP5590653B2 (ja) * | 2010-02-16 | 2014-09-17 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光装置の製造方法 |
| JP2011222950A (ja) * | 2010-03-24 | 2011-11-04 | Showa Denko Kk | 発光ダイオード |
| JP5648475B2 (ja) | 2010-12-28 | 2015-01-07 | 信越半導体株式会社 | 発光素子 |
| KR20120103817A (ko) | 2011-03-11 | 2012-09-20 | 서울옵토디바이스주식회사 | 발광 다이오드 제조 방법 |
| JP2013042082A (ja) * | 2011-08-19 | 2013-02-28 | Hitachi Cable Ltd | 半導体発光素子 |
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2013
- 2013-06-18 KR KR1020130069663A patent/KR102101356B1/ko active Active
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2014
- 2014-06-16 JP JP2014123447A patent/JP6426377B2/ja active Active
- 2014-06-17 US US14/307,038 patent/US9147811B2/en active Active
- 2014-06-17 CN CN201410270175.4A patent/CN104241474B/zh active Active
- 2014-06-17 EP EP14172841.0A patent/EP2816615B1/en active Active