JP2011510512A5 - - Google Patents

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Publication number
JP2011510512A5
JP2011510512A5 JP2010544223A JP2010544223A JP2011510512A5 JP 2011510512 A5 JP2011510512 A5 JP 2011510512A5 JP 2010544223 A JP2010544223 A JP 2010544223A JP 2010544223 A JP2010544223 A JP 2010544223A JP 2011510512 A5 JP2011510512 A5 JP 2011510512A5
Authority
JP
Japan
Prior art keywords
layer
light emitting
semiconductor layer
light
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010544223A
Other languages
English (en)
Japanese (ja)
Other versions
JP5888854B2 (ja
JP2011510512A (ja
Filing date
Publication date
Priority claimed from KR1020080006073A external-priority patent/KR101459764B1/ko
Application filed filed Critical
Publication of JP2011510512A publication Critical patent/JP2011510512A/ja
Publication of JP2011510512A5 publication Critical patent/JP2011510512A5/ja
Application granted granted Critical
Publication of JP5888854B2 publication Critical patent/JP5888854B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010544223A 2008-01-21 2009-01-21 発光素子 Expired - Fee Related JP5888854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2008-0006073 2008-01-21
KR1020080006073A KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자
PCT/KR2009/000318 WO2009093845A2 (ko) 2008-01-21 2009-01-21 발광소자

Publications (3)

Publication Number Publication Date
JP2011510512A JP2011510512A (ja) 2011-03-31
JP2011510512A5 true JP2011510512A5 (enExample) 2012-03-08
JP5888854B2 JP5888854B2 (ja) 2016-03-22

Family

ID=40901544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010544223A Expired - Fee Related JP5888854B2 (ja) 2008-01-21 2009-01-21 発光素子

Country Status (6)

Country Link
US (2) US8174040B2 (enExample)
EP (1) EP2237332B1 (enExample)
JP (1) JP5888854B2 (enExample)
KR (1) KR101459764B1 (enExample)
CN (1) CN101926011B (enExample)
WO (1) WO2009093845A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR101100681B1 (ko) * 2009-09-10 2012-01-03 주식회사 에피밸리 반도체 발광소자
KR101007077B1 (ko) 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR101712094B1 (ko) 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR100993094B1 (ko) * 2010-02-01 2010-11-08 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
US8084776B2 (en) * 2010-02-25 2011-12-27 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
KR101028220B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028250B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자 및 이를 이용한 발광 소자 패키지
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101701510B1 (ko) 2010-07-09 2017-02-01 엘지이노텍 주식회사 발광소자
JP2014103240A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
JP6190585B2 (ja) * 2012-12-12 2017-08-30 スタンレー電気株式会社 多重量子井戸半導体発光素子
WO2014143043A1 (en) * 2013-03-15 2014-09-18 Abbott Cardiovascular Systems, Inc. Crosslinked coatings delivered via a balloon
KR101521081B1 (ko) * 2013-10-01 2015-05-18 경희대학교 산학협력단 발광 다이오드 패키지
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
JP7316610B6 (ja) * 2018-01-26 2024-02-19 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
EP0483868B1 (en) 1990-11-02 1997-01-22 Norikatsu Yamauchi Semiconductor device having reflecting layer
JP3134382B2 (ja) 1991-07-31 2001-02-13 大同特殊鋼株式会社 チャープ状光反射層を備えた半導体装置
JPH0527177A (ja) * 1991-07-25 1993-02-05 Fuji Photo Film Co Ltd 走査型顕微鏡
GB2353400B (en) 1999-08-20 2004-01-14 Cambridge Display Tech Ltd Mutiple-wavelength light emitting device and electronic apparatus
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JP2004056010A (ja) * 2002-07-23 2004-02-19 Toyota Central Res & Dev Lab Inc 窒化物半導体発光素子
JP4350996B2 (ja) * 2002-11-26 2009-10-28 日東電工株式会社 有機エレクトロルミネッセンス素子、面光源および表示装置
TWI312582B (en) * 2003-07-24 2009-07-21 Epistar Corporatio Led device, flip-chip led package and light reflecting structure
JP4315760B2 (ja) 2003-07-31 2009-08-19 株式会社沖データ 半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
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TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
US20070018182A1 (en) * 2005-07-20 2007-01-25 Goldeneye, Inc. Light emitting diodes with improved light extraction and reflectivity
WO2007069871A1 (en) * 2005-12-16 2007-06-21 Samsung Electronics Co., Ltd. Optical device and method of fabricating the same
KR100862505B1 (ko) * 2006-02-01 2008-10-08 삼성전기주식회사 발광 다이오드 소자 및 그 제조방법
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
TWI370560B (en) * 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
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