JP2011504660A5 - - Google Patents
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- Publication number
- JP2011504660A5 JP2011504660A5 JP2010534897A JP2010534897A JP2011504660A5 JP 2011504660 A5 JP2011504660 A5 JP 2011504660A5 JP 2010534897 A JP2010534897 A JP 2010534897A JP 2010534897 A JP2010534897 A JP 2010534897A JP 2011504660 A5 JP2011504660 A5 JP 2011504660A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- medium
- reflective film
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070120649A KR101449005B1 (ko) | 2007-11-26 | 2007-11-26 | 반도체 발광소자 및 그 제조방법 |
| KR10-2007-0120649 | 2007-11-26 | ||
| PCT/KR2008/006947 WO2009069929A2 (en) | 2007-11-26 | 2008-11-25 | Semiconductor light emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014007182A Division JP2014096603A (ja) | 2007-11-26 | 2014-01-17 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011504660A JP2011504660A (ja) | 2011-02-10 |
| JP2011504660A5 true JP2011504660A5 (enExample) | 2012-01-19 |
| JP5550078B2 JP5550078B2 (ja) | 2014-07-16 |
Family
ID=40679124
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010534897A Expired - Fee Related JP5550078B2 (ja) | 2007-11-26 | 2008-11-25 | 半導体発光素子 |
| JP2014007182A Pending JP2014096603A (ja) | 2007-11-26 | 2014-01-17 | 半導体発光素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014007182A Pending JP2014096603A (ja) | 2007-11-26 | 2014-01-17 | 半導体発光素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US8253156B2 (enExample) |
| EP (2) | EP2201618B1 (enExample) |
| JP (2) | JP5550078B2 (enExample) |
| KR (1) | KR101449005B1 (enExample) |
| CN (2) | CN102751405B (enExample) |
| DE (1) | DE202008018199U1 (enExample) |
| WO (1) | WO2009069929A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101449005B1 (ko) * | 2007-11-26 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101550922B1 (ko) * | 2009-03-10 | 2015-09-07 | 엘지이노텍 주식회사 | 발광 소자 |
| JP2011029574A (ja) * | 2009-03-31 | 2011-02-10 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| JP2011009524A (ja) * | 2009-06-26 | 2011-01-13 | Hitachi Cable Ltd | 発光素子及び発光素子の製造方法 |
| KR101014013B1 (ko) | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101081193B1 (ko) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101072034B1 (ko) | 2009-10-15 | 2011-10-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101114047B1 (ko) | 2009-10-22 | 2012-03-09 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| KR101039896B1 (ko) | 2009-12-03 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| EP2660883B1 (en) | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system |
| KR101028314B1 (ko) * | 2010-01-29 | 2011-04-12 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| KR101064020B1 (ko) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| TW201248915A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Light-emitting diode of high light-extraction efficiency and its preparation method |
| KR101877396B1 (ko) * | 2011-09-07 | 2018-08-09 | 엘지이노텍 주식회사 | 발광소자 |
| US8957440B2 (en) * | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
| US9847372B2 (en) * | 2011-12-01 | 2017-12-19 | Micron Technology, Inc. | Solid state transducer devices with separately controlled regions, and associated systems and methods |
| JP6167109B2 (ja) * | 2011-12-12 | 2017-07-19 | センサー エレクトロニック テクノロジー インコーポレイテッド | 紫外線反射型コンタクト |
| US9818912B2 (en) | 2011-12-12 | 2017-11-14 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
| CN104103722B (zh) | 2013-04-15 | 2017-03-01 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
| JP6110217B2 (ja) | 2013-06-10 | 2017-04-05 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子の製造方法 |
| CN103346227B (zh) * | 2013-07-03 | 2016-04-06 | 河北工业大学 | 一种氮化镓基发光二极管芯片及其制备方法 |
| CN104218134B (zh) * | 2014-09-15 | 2017-02-15 | 映瑞光电科技(上海)有限公司 | 一种具有特殊粗化形貌的led垂直芯片结构及其制备方法 |
| US9472719B2 (en) | 2015-02-18 | 2016-10-18 | Epistar Corporation | Light-emitting diode |
| KR20170108321A (ko) | 2016-03-17 | 2017-09-27 | 주식회사 루멘스 | 발광 다이오드 |
| CN108767081B (zh) * | 2018-03-06 | 2020-01-24 | 天津三安光电有限公司 | 倒装发光二极管及其制作方法 |
| US12113159B2 (en) * | 2018-12-31 | 2024-10-08 | Nano-X | Dual emission LED chip |
| JP7352941B2 (ja) * | 2019-08-28 | 2023-09-29 | 学校法人 名城大学 | 窒化物半導体多層膜反射鏡の製造方法 |
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| JP2809692B2 (ja) | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
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| EP1313153A3 (en) * | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
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| TW564584B (en) | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| US6784462B2 (en) | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| US20040104395A1 (en) * | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
| JP2005142532A (ja) * | 2003-10-14 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
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| JP2007157853A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
| JP4655920B2 (ja) * | 2005-12-22 | 2011-03-23 | 日立電線株式会社 | 半導体発光素子 |
| JP5189734B2 (ja) * | 2006-01-24 | 2013-04-24 | ローム株式会社 | 窒化物半導体発光素子 |
| JP4049186B2 (ja) * | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
| JP2007207981A (ja) * | 2006-02-01 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
| US8049233B2 (en) | 2006-03-10 | 2011-11-01 | Panasonic Electric Works Co., Ltd. | Light-emitting device |
| JP5048960B2 (ja) * | 2006-03-20 | 2012-10-17 | パナソニック株式会社 | 半導体発光素子 |
| KR100778820B1 (ko) * | 2006-04-25 | 2007-11-22 | 포항공과대학교 산학협력단 | 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자 |
| JP5306589B2 (ja) * | 2006-11-17 | 2013-10-02 | シャープ株式会社 | 半導体発光素子及びその製造方法 |
| JP2008182110A (ja) * | 2007-01-25 | 2008-08-07 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置 |
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| CN101315959A (zh) * | 2007-06-01 | 2008-12-03 | 富士迈半导体精密工业（上海）有限公司 | 高亮度发光二极管 |
| US20100200881A1 (en) * | 2007-06-28 | 2010-08-12 | Kyocera Corporation | Light Emitting Element and Illumination Device |
| US20090001404A1 (en) * | 2007-06-29 | 2009-01-01 | Ohata Takafumi | Semiconductor light emitting device, process for producing the same, and led illuminating apparatus using the same |
| JP2009081374A (ja) * | 2007-09-27 | 2009-04-16 | Rohm Co Ltd | 半導体発光素子 |
| KR101449005B1 (ko) * | 2007-11-26 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR100992776B1 (ko) * | 2008-11-14 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR100992772B1 (ko) * | 2008-11-20 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2007
- 2007-11-26 KR KR1020070120649A patent/KR101449005B1/ko not_active Expired - Fee Related
-
2008
- 2008-11-25 DE DE202008018199U patent/DE202008018199U1/de not_active Expired - Lifetime
- 2008-11-25 EP EP08855034.8A patent/EP2201618B1/en not_active Not-in-force
- 2008-11-25 US US12/743,197 patent/US8253156B2/en active Active
- 2008-11-25 CN CN201210251517.9A patent/CN102751405B/zh active Active
- 2008-11-25 CN CN2008801178926A patent/CN101874308B/zh active Active
- 2008-11-25 EP EP12166234.0A patent/EP2485280B1/en not_active Not-in-force
- 2008-11-25 WO PCT/KR2008/006947 patent/WO2009069929A2/en not_active Ceased
- 2008-11-25 JP JP2010534897A patent/JP5550078B2/ja not_active Expired - Fee Related
-
2012
- 2012-07-27 US US13/560,812 patent/US8618571B2/en active Active
-
2013
- 2013-07-05 US US13/936,032 patent/US8969902B2/en active Active
-
2014
- 2014-01-17 JP JP2014007182A patent/JP2014096603A/ja active Pending
-
2015
- 2015-01-16 US US14/599,184 patent/US9472739B2/en active Active