JP2011233897A5 - - Google Patents

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Publication number
JP2011233897A5
JP2011233897A5 JP2011097256A JP2011097256A JP2011233897A5 JP 2011233897 A5 JP2011233897 A5 JP 2011233897A5 JP 2011097256 A JP2011097256 A JP 2011097256A JP 2011097256 A JP2011097256 A JP 2011097256A JP 2011233897 A5 JP2011233897 A5 JP 2011233897A5
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JP
Japan
Prior art keywords
light emitting
layer
emitting device
light
low refractive
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JP2011097256A
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English (en)
Japanese (ja)
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JP2011233897A (ja
JP5788210B2 (ja
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Priority claimed from KR1020100037944A external-priority patent/KR101064020B1/ko
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Publication of JP2011233897A publication Critical patent/JP2011233897A/ja
Publication of JP2011233897A5 publication Critical patent/JP2011233897A5/ja
Application granted granted Critical
Publication of JP5788210B2 publication Critical patent/JP5788210B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011097256A 2010-04-23 2011-04-25 発光素子、発光素子パッケージ Expired - Fee Related JP5788210B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100037944A KR101064020B1 (ko) 2010-04-23 2010-04-23 발광 소자 및 그 제조방법
KR10-2010-0037944 2010-04-23

Publications (3)

Publication Number Publication Date
JP2011233897A JP2011233897A (ja) 2011-11-17
JP2011233897A5 true JP2011233897A5 (enExample) 2014-07-03
JP5788210B2 JP5788210B2 (ja) 2015-09-30

Family

ID=44310820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011097256A Expired - Fee Related JP5788210B2 (ja) 2010-04-23 2011-04-25 発光素子、発光素子パッケージ

Country Status (6)

Country Link
US (1) US8624283B2 (enExample)
EP (1) EP2381490B1 (enExample)
JP (1) JP5788210B2 (enExample)
KR (1) KR101064020B1 (enExample)
CN (1) CN102237463B (enExample)
TW (1) TWI513042B (enExample)

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US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
CN107256915A (zh) 2009-09-18 2017-10-17 天空公司 发光二极管器件
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9847372B2 (en) 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US9437783B2 (en) * 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US8802471B1 (en) * 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
TWD156894S (zh) * 2013-02-08 2013-11-01 旭明光電股份有限公司 發光二極體晶片
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
KR102098323B1 (ko) * 2013-09-17 2020-05-26 엘지이노텍 주식회사 발광소자
CN104851947B (zh) * 2015-04-21 2017-11-14 北京邮电大学 一种带有表面糙化透光结构的led芯片及其制作方法
KR102363290B1 (ko) * 2016-06-13 2022-02-16 삼성디스플레이 주식회사 광학 터치 필름, 이를 포함하는 표시 장치 및 그 제조 방법
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11705322B2 (en) 2020-02-11 2023-07-18 Slt Technologies, Inc. Group III nitride substrate, method of making, and method of use
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JP5130730B2 (ja) * 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
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JP2010080741A (ja) 2008-09-26 2010-04-08 Sharp Corp 半導体発光素子
KR100986523B1 (ko) * 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5185308B2 (ja) * 2010-03-09 2013-04-17 株式会社東芝 半導体発光装置の製造方法

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