|
US7638346B2
(en)
*
|
2001-12-24 |
2009-12-29 |
Crystal Is, Inc. |
Nitride semiconductor heterostructures and related methods
|
|
US20060005763A1
(en)
*
|
2001-12-24 |
2006-01-12 |
Crystal Is, Inc. |
Method and apparatus for producing large, single-crystals of aluminum nitride
|
|
US8545629B2
(en)
|
2001-12-24 |
2013-10-01 |
Crystal Is, Inc. |
Method and apparatus for producing large, single-crystals of aluminum nitride
|
|
TWI228272B
(en)
|
2003-09-19 |
2005-02-21 |
Tinggi Technologies Pte Ltd |
Fabrication of semiconductor devices
|
|
WO2005088743A1
(en)
*
|
2004-03-15 |
2005-09-22 |
Tinggi Technologies Private Limited |
Fabrication of semiconductor devices
|
|
WO2005098974A1
(en)
|
2004-04-07 |
2005-10-20 |
Tinggi Technologies Private Limited |
Fabrication of reflective layer on semiconductor light emitting diodes
|
|
US7719020B2
(en)
*
|
2005-06-17 |
2010-05-18 |
The Regents Of The University Of California |
(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
|
|
US20060002442A1
(en)
*
|
2004-06-30 |
2006-01-05 |
Kevin Haberern |
Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
|
|
US7795623B2
(en)
|
2004-06-30 |
2010-09-14 |
Cree, Inc. |
Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
|
|
US8174037B2
(en)
|
2004-09-22 |
2012-05-08 |
Cree, Inc. |
High efficiency group III nitride LED with lenticular surface
|
|
US7335920B2
(en)
*
|
2005-01-24 |
2008-02-26 |
Cree, Inc. |
LED with current confinement structure and surface roughening
|
|
US8097897B2
(en)
*
|
2005-06-21 |
2012-01-17 |
Epistar Corporation |
High-efficiency light-emitting device and manufacturing method thereof
|
|
JP2006310721A
(ja)
*
|
2005-03-28 |
2006-11-09 |
Yokohama National Univ |
自発光デバイス
|
|
US8674375B2
(en)
*
|
2005-07-21 |
2014-03-18 |
Cree, Inc. |
Roughened high refractive index layer/LED for high light extraction
|
|
SG130975A1
(en)
*
|
2005-09-29 |
2007-04-26 |
Tinggi Tech Private Ltd |
Fabrication of semiconductor devices for light emission
|
|
SG131803A1
(en)
*
|
2005-10-19 |
2007-05-28 |
Tinggi Tech Private Ltd |
Fabrication of transistors
|
|
EP1954857B1
(en)
|
2005-12-02 |
2018-09-26 |
Crystal Is, Inc. |
Doped aluminum nitride crystals and methods of making them
|
|
SG133432A1
(en)
*
|
2005-12-20 |
2007-07-30 |
Tinggi Tech Private Ltd |
Localized annealing during semiconductor device fabrication
|
|
US7888686B2
(en)
*
|
2005-12-28 |
2011-02-15 |
Group Iv Semiconductor Inc. |
Pixel structure for a solid state light emitting device
|
|
JP2009530798A
(ja)
|
2006-01-05 |
2009-08-27 |
イルミテックス, インコーポレイテッド |
Ledから光を導くための独立した光学デバイス
|
|
KR100735488B1
(ko)
*
|
2006-02-03 |
2007-07-04 |
삼성전기주식회사 |
질화갈륨계 발광다이오드 소자의 제조방법
|
|
US8012257B2
(en)
*
|
2006-03-30 |
2011-09-06 |
Crystal Is, Inc. |
Methods for controllable doping of aluminum nitride bulk crystals
|
|
US9034103B2
(en)
*
|
2006-03-30 |
2015-05-19 |
Crystal Is, Inc. |
Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
|
|
US20080008964A1
(en)
*
|
2006-07-05 |
2008-01-10 |
Chia-Hua Chan |
Light emitting diode and method of fabricating a nano/micro structure
|
|
SG140473A1
(en)
*
|
2006-08-16 |
2008-03-28 |
Tinggi Tech Private Ltd |
Improvements in external light efficiency of light emitting diodes
|
|
SG140512A1
(en)
*
|
2006-09-04 |
2008-03-28 |
Tinggi Tech Private Ltd |
Electrical current distribution in light emitting devices
|
|
KR20090064474A
(ko)
*
|
2006-10-02 |
2009-06-18 |
일루미텍스, 인크. |
Led 시스템 및 방법
|
|
US20090275266A1
(en)
*
|
2006-10-02 |
2009-11-05 |
Illumitex, Inc. |
Optical device polishing
|
|
KR100826412B1
(ko)
*
|
2006-11-03 |
2008-04-29 |
삼성전기주식회사 |
질화물 반도체 발광 소자 및 제조방법
|
|
KR100867529B1
(ko)
*
|
2006-11-14 |
2008-11-10 |
삼성전기주식회사 |
수직형 발광 소자
|
|
US20080116578A1
(en)
*
|
2006-11-21 |
2008-05-22 |
Kuan-Chen Wang |
Initiation layer for reducing stress transition due to curing
|
|
TWI460881B
(zh)
|
2006-12-11 |
2014-11-11 |
美國加利福尼亞大學董事會 |
透明發光二極體
|
|
US8323406B2
(en)
*
|
2007-01-17 |
2012-12-04 |
Crystal Is, Inc. |
Defect reduction in seeded aluminum nitride crystal growth
|
|
US9771666B2
(en)
|
2007-01-17 |
2017-09-26 |
Crystal Is, Inc. |
Defect reduction in seeded aluminum nitride crystal growth
|
|
US8080833B2
(en)
*
|
2007-01-26 |
2011-12-20 |
Crystal Is, Inc. |
Thick pseudomorphic nitride epitaxial layers
|
|
CN101652832B
(zh)
*
|
2007-01-26 |
2011-06-22 |
晶体公司 |
厚的赝晶氮化物外延层
|
|
DE102007022947B4
(de)
*
|
2007-04-26 |
2022-05-05 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
|
|
US20080283503A1
(en)
*
|
2007-05-14 |
2008-11-20 |
Cheng-Yi Liu |
Method of Processing Nature Pattern on Expitaxial Substrate
|
|
US8088220B2
(en)
|
2007-05-24 |
2012-01-03 |
Crystal Is, Inc. |
Deep-eutectic melt growth of nitride crystals
|
|
JP2008294188A
(ja)
*
|
2007-05-24 |
2008-12-04 |
Toyoda Gosei Co Ltd |
半導体発光素子及びその製造方法
|
|
US8148733B2
(en)
*
|
2007-06-12 |
2012-04-03 |
SemiLEDs Optoelectronics Co., Ltd. |
Vertical LED with current guiding structure
|
|
DE102007046519A1
(de)
*
|
2007-09-28 |
2009-04-02 |
Osram Opto Semiconductors Gmbh |
Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
|
|
US8368100B2
(en)
*
|
2007-11-14 |
2013-02-05 |
Cree, Inc. |
Semiconductor light emitting diodes having reflective structures and methods of fabricating same
|
|
US9461201B2
(en)
|
2007-11-14 |
2016-10-04 |
Cree, Inc. |
Light emitting diode dielectric mirror
|
|
US8536584B2
(en)
*
|
2007-11-14 |
2013-09-17 |
Cree, Inc. |
High voltage wire bond free LEDS
|
|
US7915629B2
(en)
|
2008-12-08 |
2011-03-29 |
Cree, Inc. |
Composite high reflectivity layer
|
|
EP2240968A1
(en)
*
|
2008-02-08 |
2010-10-20 |
Illumitex, Inc. |
System and method for emitter layer shaping
|
|
US20090242929A1
(en)
*
|
2008-03-31 |
2009-10-01 |
Chao-Kun Lin |
Light emitting diodes with patterned current blocking metal contact
|
|
EP2280426B1
(en)
*
|
2008-04-16 |
2017-07-05 |
LG Innotek Co., Ltd. |
Light-emitting device
|
|
US8664747B2
(en)
*
|
2008-04-28 |
2014-03-04 |
Toshiba Techno Center Inc. |
Trenched substrate for crystal growth and wafer bonding
|
|
CN101990714B
(zh)
*
|
2008-04-30 |
2012-11-28 |
Lg伊诺特有限公司 |
发光器件和用于制造发光器件的方法
|
|
KR101047634B1
(ko)
*
|
2008-11-24 |
2011-07-07 |
엘지이노텍 주식회사 |
발광 소자 및 그 제조방법
|
|
TW201034256A
(en)
*
|
2008-12-11 |
2010-09-16 |
Illumitex Inc |
Systems and methods for packaging light-emitting diode devices
|
|
KR101134720B1
(ko)
*
|
2009-02-16 |
2012-04-13 |
엘지이노텍 주식회사 |
반도체 발광소자 및 그 제조방법
|
|
US8529102B2
(en)
*
|
2009-04-06 |
2013-09-10 |
Cree, Inc. |
Reflector system for lighting device
|
|
US8476668B2
(en)
*
|
2009-04-06 |
2013-07-02 |
Cree, Inc. |
High voltage low current surface emitting LED
|
|
US9093293B2
(en)
|
2009-04-06 |
2015-07-28 |
Cree, Inc. |
High voltage low current surface emitting light emitting diode
|
|
US8096671B1
(en)
|
2009-04-06 |
2012-01-17 |
Nmera, Llc |
Light emitting diode illumination system
|
|
JP2010263085A
(ja)
*
|
2009-05-07 |
2010-11-18 |
Toshiba Corp |
発光素子
|
|
US8207547B2
(en)
*
|
2009-06-10 |
2012-06-26 |
Brudgelux, Inc. |
Thin-film LED with P and N contacts electrically isolated from the substrate
|
|
US20100314551A1
(en)
*
|
2009-06-11 |
2010-12-16 |
Bettles Timothy J |
In-line Fluid Treatment by UV Radiation
|
|
JP2011013083A
(ja)
*
|
2009-07-01 |
2011-01-20 |
Canon Inc |
測定装置及びそれを用いた機器
|
|
US8449128B2
(en)
*
|
2009-08-20 |
2013-05-28 |
Illumitex, Inc. |
System and method for a lens and phosphor layer
|
|
US8585253B2
(en)
|
2009-08-20 |
2013-11-19 |
Illumitex, Inc. |
System and method for color mixing lens array
|
|
TWI405409B
(zh)
*
|
2009-08-27 |
2013-08-11 |
Novatek Microelectronics Corp |
低電壓差動訊號輸出級
|
|
US9362459B2
(en)
|
2009-09-02 |
2016-06-07 |
United States Department Of Energy |
High reflectivity mirrors and method for making same
|
|
US9435493B2
(en)
|
2009-10-27 |
2016-09-06 |
Cree, Inc. |
Hybrid reflector system for lighting device
|
|
US8525221B2
(en)
*
|
2009-11-25 |
2013-09-03 |
Toshiba Techno Center, Inc. |
LED with improved injection efficiency
|
|
TWI398965B
(zh)
*
|
2009-11-25 |
2013-06-11 |
Formosa Epitaxy Inc |
發光二極體晶片及其封裝結構
|
|
KR100986523B1
(ko)
*
|
2010-02-08 |
2010-10-07 |
엘지이노텍 주식회사 |
반도체 발광소자 및 그 제조방법
|
|
US8860077B2
(en)
*
|
2010-02-12 |
2014-10-14 |
Lg Innotek Co., Ltd. |
Light emitting device and light emitting device package including the same
|
|
US9064693B2
(en)
|
2010-03-01 |
2015-06-23 |
Kirsteen Mgmt. Group Llc |
Deposition of thin film dielectrics and light emitting nano-layer structures
|
|
RU2434315C1
(ru)
|
2010-03-15 |
2011-11-20 |
Юрий Георгиевич Шретер |
Светоизлучающее устройство с гетерофазными границами
|
|
US8597962B2
(en)
|
2010-03-31 |
2013-12-03 |
Varian Semiconductor Equipment Associates, Inc. |
Vertical structure LED current spreading by implanted regions
|
|
US9012938B2
(en)
|
2010-04-09 |
2015-04-21 |
Cree, Inc. |
High reflective substrate of light emitting devices with improved light output
|
|
US9105824B2
(en)
|
2010-04-09 |
2015-08-11 |
Cree, Inc. |
High reflective board or substrate for LEDs
|
|
KR101014071B1
(ko)
*
|
2010-04-15 |
2011-02-10 |
엘지이노텍 주식회사 |
발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
|
|
CN105951177B
(zh)
|
2010-06-30 |
2018-11-02 |
晶体公司 |
使用热梯度控制的大块氮化铝单晶的生长
|
|
US9287452B2
(en)
|
2010-08-09 |
2016-03-15 |
Micron Technology, Inc. |
Solid state lighting devices with dielectric insulation and methods of manufacturing
|
|
US8764224B2
(en)
|
2010-08-12 |
2014-07-01 |
Cree, Inc. |
Luminaire with distributed LED sources
|
|
JP5258853B2
(ja)
*
|
2010-08-17 |
2013-08-07 |
株式会社東芝 |
半導体発光素子及びその製造方法
|
|
KR101657631B1
(ko)
*
|
2010-08-23 |
2016-09-19 |
엘지이노텍 주식회사 |
발광 소자
|
|
US8502244B2
(en)
*
|
2010-08-31 |
2013-08-06 |
Micron Technology, Inc. |
Solid state lighting devices with current routing and associated methods of manufacturing
|
|
US9070851B2
(en)
|
2010-09-24 |
2015-06-30 |
Seoul Semiconductor Co., Ltd. |
Wafer-level light emitting diode package and method of fabricating the same
|
|
US8455882B2
(en)
|
2010-10-15 |
2013-06-04 |
Cree, Inc. |
High efficiency LEDs
|
|
US20120138986A1
(en)
*
|
2010-10-28 |
2012-06-07 |
The Regents Of The University Of California |
Method for fabrication of (al,in,ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode
|
|
US20120241788A1
(en)
*
|
2010-10-29 |
2012-09-27 |
Sionyx, Inc. |
Textured Light Emitting Devices and Methods of Making the Same
|
|
CN102468377A
(zh)
*
|
2010-11-23 |
2012-05-23 |
孙智江 |
一种提高电流扩展效应的led制作方法
|
|
RU2494498C2
(ru)
|
2011-02-24 |
2013-09-27 |
Юрий Георгиевич Шретер |
Светоизлучающее полупроводниковое устройство
|
|
US8680556B2
(en)
|
2011-03-24 |
2014-03-25 |
Cree, Inc. |
Composite high reflectivity layer
|
|
EP2528114A3
(en)
*
|
2011-05-23 |
2014-07-09 |
LG Innotek Co., Ltd. |
Light emitting device, light emitting device package, and light unit
|
|
US9142741B2
(en)
|
2011-06-15 |
2015-09-22 |
Sensor Electronic Technology, Inc. |
Emitting device with improved extraction
|
|
US9337387B2
(en)
|
2011-06-15 |
2016-05-10 |
Sensor Electronic Technology, Inc. |
Emitting device with improved extraction
|
|
US9741899B2
(en)
|
2011-06-15 |
2017-08-22 |
Sensor Electronic Technology, Inc. |
Device with inverted large scale light extraction structures
|
|
US10522714B2
(en)
|
2011-06-15 |
2019-12-31 |
Sensor Electronic Technology, Inc. |
Device with inverted large scale light extraction structures
|
|
KR20140047070A
(ko)
|
2011-06-15 |
2014-04-21 |
센서 일렉트로닉 테크놀로지, 인크 |
역전된 대면적 광 추출 구조들을 갖는 디바이스
|
|
US10319881B2
(en)
|
2011-06-15 |
2019-06-11 |
Sensor Electronic Technology, Inc. |
Device including transparent layer with profiled surface for improved extraction
|
|
US8686429B2
(en)
|
2011-06-24 |
2014-04-01 |
Cree, Inc. |
LED structure with enhanced mirror reflectivity
|
|
US9728676B2
(en)
|
2011-06-24 |
2017-08-08 |
Cree, Inc. |
High voltage monolithic LED chip
|
|
US10243121B2
(en)
|
2011-06-24 |
2019-03-26 |
Cree, Inc. |
High voltage monolithic LED chip with improved reliability
|
|
US20130001510A1
(en)
*
|
2011-06-29 |
2013-01-03 |
SemiLEDs Optoelectronics Co., Ltd. |
Optoelectronic device having current blocking insulation layer for uniform temperature distribution and method of fabrication
|
|
US8395165B2
(en)
|
2011-07-08 |
2013-03-12 |
Bridelux, Inc. |
Laterally contacted blue LED with superlattice current spreading layer
|
|
US8962359B2
(en)
|
2011-07-19 |
2015-02-24 |
Crystal Is, Inc. |
Photon extraction from nitride ultraviolet light-emitting devices
|
|
JP6056154B2
(ja)
*
|
2011-07-21 |
2017-01-11 |
富士ゼロックス株式会社 |
発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置
|
|
US20130026480A1
(en)
|
2011-07-25 |
2013-01-31 |
Bridgelux, Inc. |
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
|
|
US8916906B2
(en)
|
2011-07-29 |
2014-12-23 |
Kabushiki Kaisha Toshiba |
Boron-containing buffer layer for growing gallium nitride on silicon
|
|
US9012939B2
(en)
|
2011-08-02 |
2015-04-21 |
Kabushiki Kaisha Toshiba |
N-type gallium-nitride layer having multiple conductive intervening layers
|
|
US9142743B2
(en)
|
2011-08-02 |
2015-09-22 |
Kabushiki Kaisha Toshiba |
High temperature gold-free wafer bonding for light emitting diodes
|
|
US8865565B2
(en)
|
2011-08-02 |
2014-10-21 |
Kabushiki Kaisha Toshiba |
LED having a low defect N-type layer that has grown on a silicon substrate
|
|
US9343641B2
(en)
|
2011-08-02 |
2016-05-17 |
Manutius Ip, Inc. |
Non-reactive barrier metal for eutectic bonding process
|
|
US20130032810A1
(en)
|
2011-08-03 |
2013-02-07 |
Bridgelux, Inc. |
Led on silicon substrate using zinc-sulfide as buffer layer
|
|
US8564010B2
(en)
|
2011-08-04 |
2013-10-22 |
Toshiba Techno Center Inc. |
Distributed current blocking structures for light emitting diodes
|
|
US9059362B2
(en)
*
|
2011-08-30 |
2015-06-16 |
Fuji Xerox Co., Ltd. |
Light emitting element, light emitting element array, optical writing head, and image forming apparatus
|
|
US8624482B2
(en)
|
2011-09-01 |
2014-01-07 |
Toshiba Techno Center Inc. |
Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
|
|
US8669585B1
(en)
|
2011-09-03 |
2014-03-11 |
Toshiba Techno Center Inc. |
LED that has bounding silicon-doped regions on either side of a strain release layer
|
|
US9324560B2
(en)
|
2011-09-06 |
2016-04-26 |
Sensor Electronic Technology, Inc. |
Patterned substrate design for layer growth
|
|
US8558247B2
(en)
|
2011-09-06 |
2013-10-15 |
Toshiba Techno Center Inc. |
GaN LEDs with improved area and method for making the same
|
|
US10032956B2
(en)
|
2011-09-06 |
2018-07-24 |
Sensor Electronic Technology, Inc. |
Patterned substrate design for layer growth
|
|
WO2013033841A1
(en)
|
2011-09-06 |
2013-03-14 |
Trilogy Environmental Systems Inc. |
Hybrid desalination system
|
|
US8686430B2
(en)
|
2011-09-07 |
2014-04-01 |
Toshiba Techno Center Inc. |
Buffer layer for GaN-on-Si LED
|
|
US8853668B2
(en)
|
2011-09-29 |
2014-10-07 |
Kabushiki Kaisha Toshiba |
Light emitting regions for use with light emitting devices
|
|
US20130082274A1
(en)
|
2011-09-29 |
2013-04-04 |
Bridgelux, Inc. |
Light emitting devices having dislocation density maintaining buffer layers
|
|
US8698163B2
(en)
|
2011-09-29 |
2014-04-15 |
Toshiba Techno Center Inc. |
P-type doping layers for use with light emitting devices
|
|
US9012921B2
(en)
|
2011-09-29 |
2015-04-21 |
Kabushiki Kaisha Toshiba |
Light emitting devices having light coupling layers
|
|
US8664679B2
(en)
|
2011-09-29 |
2014-03-04 |
Toshiba Techno Center Inc. |
Light emitting devices having light coupling layers with recessed electrodes
|
|
US9178114B2
(en)
|
2011-09-29 |
2015-11-03 |
Manutius Ip, Inc. |
P-type doping layers for use with light emitting devices
|
|
US8552465B2
(en)
|
2011-11-09 |
2013-10-08 |
Toshiba Techno Center Inc. |
Method for reducing stress in epitaxial growth
|
|
US8581267B2
(en)
|
2011-11-09 |
2013-11-12 |
Toshiba Techno Center Inc. |
Series connected segmented LED
|
|
US9847372B2
(en)
|
2011-12-01 |
2017-12-19 |
Micron Technology, Inc. |
Solid state transducer devices with separately controlled regions, and associated systems and methods
|
|
CN103137809A
(zh)
*
|
2011-12-05 |
2013-06-05 |
联胜光电股份有限公司 |
一种具电流扩散结构的发光二极管与其制造方法
|
|
US20130161669A1
(en)
*
|
2011-12-23 |
2013-06-27 |
Fu-Bang CHEN |
Light-emitting diode with current diffusion structure and a method for fabricating the same
|
|
CN103383982A
(zh)
*
|
2012-05-03 |
2013-11-06 |
联胜光电股份有限公司 |
发光二极管的电极接触结构
|
|
US9437783B2
(en)
|
2012-05-08 |
2016-09-06 |
Cree, Inc. |
Light emitting diode (LED) contact structures and process for fabricating the same
|
|
US9450152B2
(en)
|
2012-05-29 |
2016-09-20 |
Micron Technology, Inc. |
Solid state transducer dies having reflective features over contacts and associated systems and methods
|
|
EP2856522B8
(en)
|
2012-06-01 |
2018-09-05 |
Lumileds Holding B.V. |
Improved light extraction using feature size and shape control in led surface roughening
|
|
KR101936267B1
(ko)
*
|
2012-06-08 |
2019-01-08 |
엘지이노텍 주식회사 |
발광소자, 발광소자 패키지 및 라이트 유닛
|
|
CN103682020A
(zh)
*
|
2012-08-31 |
2014-03-26 |
展晶科技(深圳)有限公司 |
发光二极管晶粒的制造方法
|
|
US8814376B2
(en)
|
2012-09-26 |
2014-08-26 |
Apogee Translite, Inc. |
Lighting devices
|
|
CN102903817B
(zh)
*
|
2012-10-31 |
2015-04-22 |
安徽三安光电有限公司 |
具有反射电极的发光装置
|
|
JP6275817B2
(ja)
|
2013-03-15 |
2018-02-07 |
クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. |
仮像電子及び光学電子装置に対する平面コンタクト
|
|
JP6100567B2
(ja)
*
|
2013-03-18 |
2017-03-22 |
スタンレー電気株式会社 |
半導体発光素子とその製造方法
|
|
US11060705B1
(en)
|
2013-07-05 |
2021-07-13 |
DMF, Inc. |
Compact lighting apparatus with AC to DC converter and integrated electrical connector
|
|
US10563850B2
(en)
|
2015-04-22 |
2020-02-18 |
DMF, Inc. |
Outer casing for a recessed lighting fixture
|
|
US10139059B2
(en)
|
2014-02-18 |
2018-11-27 |
DMF, Inc. |
Adjustable compact recessed lighting assembly with hangar bars
|
|
US11255497B2
(en)
|
2013-07-05 |
2022-02-22 |
DMF, Inc. |
Adjustable electrical apparatus with hangar bars for installation in a building
|
|
US9964266B2
(en)
|
2013-07-05 |
2018-05-08 |
DMF, Inc. |
Unified driver and light source assembly for recessed lighting
|
|
US10753558B2
(en)
|
2013-07-05 |
2020-08-25 |
DMF, Inc. |
Lighting apparatus and methods
|
|
US10551044B2
(en)
|
2015-11-16 |
2020-02-04 |
DMF, Inc. |
Recessed lighting assembly
|
|
US11435064B1
(en)
|
2013-07-05 |
2022-09-06 |
DMF, Inc. |
Integrated lighting module
|
|
TWI597863B
(zh)
*
|
2013-10-22 |
2017-09-01 |
晶元光電股份有限公司 |
發光元件及其製造方法
|
|
KR102140278B1
(ko)
*
|
2014-04-18 |
2020-07-31 |
엘지이노텍 주식회사 |
발광 소자
|
|
JP6303805B2
(ja)
*
|
2014-05-21 |
2018-04-04 |
日亜化学工業株式会社 |
発光装置及びその製造方法
|
|
US10658546B2
(en)
|
2015-01-21 |
2020-05-19 |
Cree, Inc. |
High efficiency LEDs and methods of manufacturing
|
|
CA3102022C
(en)
|
2015-05-29 |
2023-04-25 |
DMF, Inc. |
Lighting module for recessed lighting systems
|
|
USD851046S1
(en)
|
2015-10-05 |
2019-06-11 |
DMF, Inc. |
Electrical Junction Box
|
|
US10461221B2
(en)
|
2016-01-18 |
2019-10-29 |
Sensor Electronic Technology, Inc. |
Semiconductor device with improved light propagation
|
|
CN205944139U
(zh)
|
2016-03-30 |
2017-02-08 |
首尔伟傲世有限公司 |
紫外线发光二极管封装件以及包含此的发光二极管模块
|
|
US10833222B2
(en)
|
2016-08-26 |
2020-11-10 |
The Penn State Research Foundation |
High light extraction efficiency (LEE) light emitting diode (LED)
|
|
US11211525B2
(en)
|
2017-05-01 |
2021-12-28 |
Ohio State Innovation Foundation |
Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
|
|
WO2018237294A2
(en)
|
2017-06-22 |
2018-12-27 |
DMF, Inc. |
Thin profile surface mount lighting apparatus
|
|
USD905327S1
(en)
|
2018-05-17 |
2020-12-15 |
DMF, Inc. |
Light fixture
|
|
US10488000B2
(en)
|
2017-06-22 |
2019-11-26 |
DMF, Inc. |
Thin profile surface mount lighting apparatus
|
|
US11067231B2
(en)
|
2017-08-28 |
2021-07-20 |
DMF, Inc. |
Alternate junction box and arrangement for lighting apparatus
|
|
CN114719211A
(zh)
|
2017-11-28 |
2022-07-08 |
Dmf股份有限公司 |
可调整的吊架杆组合件
|
|
WO2019133669A1
(en)
|
2017-12-27 |
2019-07-04 |
DMF, Inc. |
Methods and apparatus for adjusting a luminaire
|
|
USD877957S1
(en)
|
2018-05-24 |
2020-03-10 |
DMF Inc. |
Light fixture
|
|
CA3103255A1
(en)
|
2018-06-11 |
2019-12-19 |
DMF, Inc. |
A polymer housing for a recessed lighting system and methods for using same
|
|
USD903605S1
(en)
|
2018-06-12 |
2020-12-01 |
DMF, Inc. |
Plastic deep electrical junction box
|
|
CN110957204A
(zh)
*
|
2018-09-26 |
2020-04-03 |
中国科学院苏州纳米技术与纳米仿生研究所 |
Iii族氮化物光电子器件的制作方法
|
|
CA3115146A1
(en)
|
2018-10-02 |
2020-04-09 |
Ver Lighting Llc |
A bar hanger assembly with mating telescoping bars
|
|
CN109791964A
(zh)
|
2018-10-11 |
2019-05-21 |
厦门市三安光电科技有限公司 |
一种发光二极管芯片及其制作方法
|
|
US11695093B2
(en)
|
2018-11-21 |
2023-07-04 |
Analog Devices, Inc. |
Superlattice photodetector/light emitting diode
|
|
USD901398S1
(en)
|
2019-01-29 |
2020-11-10 |
DMF, Inc. |
Plastic deep electrical junction box
|
|
USD864877S1
(en)
|
2019-01-29 |
2019-10-29 |
DMF, Inc. |
Plastic deep electrical junction box with a lighting module mounting yoke
|
|
USD1012864S1
(en)
|
2019-01-29 |
2024-01-30 |
DMF, Inc. |
Portion of a plastic deep electrical junction box
|
|
USD966877S1
(en)
|
2019-03-14 |
2022-10-18 |
Ver Lighting Llc |
Hanger bar for a hanger bar assembly
|
|
WO2021051101A1
(en)
|
2019-09-12 |
2021-03-18 |
DMF, Inc. |
Miniature lighting module and lighting fixtures using same
|
|
DE102020106113A1
(de)
*
|
2020-03-06 |
2021-09-09 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
|
|
US11592166B2
(en)
|
2020-05-12 |
2023-02-28 |
Feit Electric Company, Inc. |
Light emitting device having improved illumination and manufacturing flexibility
|
|
CA3124969A1
(en)
|
2020-07-16 |
2022-01-16 |
DMF, Inc. |
Round metal housing for a lighting system
|
|
USD990030S1
(en)
|
2020-07-17 |
2023-06-20 |
DMF, Inc. |
Housing for a lighting system
|
|
CA3124976A1
(en)
|
2020-07-17 |
2022-01-17 |
DMF, Inc. |
Polymer housing for a lighting system and methods for using same
|
|
CA3124987A1
(en)
|
2020-07-17 |
2022-01-17 |
DMF, Inc. |
Bar hanger assembly with crossmembers and housing assemblies using same
|
|
US11585517B2
(en)
|
2020-07-23 |
2023-02-21 |
DMF, Inc. |
Lighting module having field-replaceable optics, improved cooling, and tool-less mounting features
|
|
US11876042B2
(en)
|
2020-08-03 |
2024-01-16 |
Feit Electric Company, Inc. |
Omnidirectional flexible light emitting device
|
|
CN115458647B
(zh)
*
|
2022-10-31 |
2025-08-19 |
天津三安光电有限公司 |
一种垂直led芯片结构及其制造方法及发光装置
|