JP2015099944A5 - - Google Patents

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Publication number
JP2015099944A5
JP2015099944A5 JP2015036177A JP2015036177A JP2015099944A5 JP 2015099944 A5 JP2015099944 A5 JP 2015099944A5 JP 2015036177 A JP2015036177 A JP 2015036177A JP 2015036177 A JP2015036177 A JP 2015036177A JP 2015099944 A5 JP2015099944 A5 JP 2015099944A5
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JP
Japan
Prior art keywords
cladding layer
layer
emitting device
light emitting
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015036177A
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English (en)
Japanese (ja)
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JP2015099944A (ja
Filing date
Publication date
Priority claimed from US12/237,106 external-priority patent/US7856040B2/en
Application filed filed Critical
Publication of JP2015099944A publication Critical patent/JP2015099944A/ja
Publication of JP2015099944A5 publication Critical patent/JP2015099944A5/ja
Pending legal-status Critical Current

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JP2015036177A 2008-09-24 2015-02-26 半導体発光デバイス Pending JP2015099944A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/237,106 US7856040B2 (en) 2008-09-24 2008-09-24 Semiconductor light emitting devices with non-epitaxial upper cladding
US12/237,106 2008-09-24

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009214461A Division JP2010080960A (ja) 2008-09-24 2009-09-16 半導体発光デバイス

Publications (2)

Publication Number Publication Date
JP2015099944A JP2015099944A (ja) 2015-05-28
JP2015099944A5 true JP2015099944A5 (enExample) 2015-08-06

Family

ID=41381957

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009214461A Pending JP2010080960A (ja) 2008-09-24 2009-09-16 半導体発光デバイス
JP2015036177A Pending JP2015099944A (ja) 2008-09-24 2015-02-26 半導体発光デバイス

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2009214461A Pending JP2010080960A (ja) 2008-09-24 2009-09-16 半導体発光デバイス

Country Status (3)

Country Link
US (2) US7856040B2 (enExample)
EP (1) EP2169791B1 (enExample)
JP (2) JP2010080960A (enExample)

Families Citing this family (21)

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US7856040B2 (en) 2008-09-24 2010-12-21 Palo Alto Research Center Incorporated Semiconductor light emitting devices with non-epitaxial upper cladding
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US9012948B2 (en) * 2010-10-04 2015-04-21 Epistar Corporation Light-emitting element having a plurality of contact parts
JP2012186195A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP5479391B2 (ja) * 2011-03-08 2014-04-23 株式会社東芝 半導体発光素子及びその製造方法
JP5963004B2 (ja) * 2011-03-24 2016-08-03 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子
US8748919B2 (en) 2011-04-28 2014-06-10 Palo Alto Research Center Incorporated Ultraviolet light emitting device incorporating optically absorbing layers
DE102011077542B4 (de) * 2011-06-15 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers
KR101946005B1 (ko) * 2012-01-26 2019-02-08 삼성전자주식회사 그래핀 소자 및 그 제조방법
US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
CN104078837B (zh) * 2013-03-29 2017-12-15 山东华光光电子股份有限公司 一种GaN基蓝绿光激光二极管器件及制作方法
WO2015052861A1 (ja) * 2013-10-10 2015-04-16 パナソニックＩｐマネジメント株式会社 半導体発光装置
CN103887705A (zh) * 2014-03-13 2014-06-25 中国科学院半导体研究所 金属完全限制的硅基混合激光器的制备方法
FR3026571B1 (fr) * 2014-09-26 2016-12-02 Thales Sa Procede d'elaboration d'une structure resonante d'un laser a semi-conducteur a contre-reaction repartie
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CN105589119A (zh) * 2016-02-29 2016-05-18 中国科学院半导体研究所 带有dbr层的太赫兹光电导天线外延结构及制备方法
US10056735B1 (en) * 2016-05-23 2018-08-21 X Development Llc Scanning UV light source utilizing semiconductor heterostructures
CN107086259A (zh) * 2017-05-24 2017-08-22 广西师范大学 基于表面等离子波导的新型发光二极管
DE102017113389B4 (de) 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser
CN114792929A (zh) * 2021-11-18 2022-07-26 埃特曼(北京)半导体技术有限公司 激光器制备方法及激光器

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US7856040B2 (en) 2008-09-24 2010-12-21 Palo Alto Research Center Incorporated Semiconductor light emitting devices with non-epitaxial upper cladding

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